公开(公告)号：US20130196507A1

公开(公告)日：2013-08-01

申请号：US13742596

申请日：2013-01-16

申请人： Paul F. Ma ,  Guojun Liu ,  Annamalai Lakshmanan ,  Dien-Yeh Wu ,  Anantha K. Subramani

发明人： Paul F. Ma ,  Guojun Liu ,  Annamalai Lakshmanan ,  Dien-Yeh Wu ,  Anantha K. Subramani

IPC分类号： H01L21/768

CPC分类号： H01L21/76838 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76862

摘要： Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.

摘要翻译： 提供了使用CVD和ALD技术沉积金属层，更具体地TaN层的方法。 在一个或多个实施例中，该方法包括将衬底顺序地暴露于金属前体，或更具体地钽前体，接着是高频等离子体。

公开(公告)号：USD665491S1

公开(公告)日：2012-08-14

申请号：US29411713

申请日：2012-01-25

申请人： Ashish Goel ,  Anantha K. Subramani

设计人： Ashish Goel ,  Anantha K. Subramani

公开(公告)号：US07297247B2

公开(公告)日：2007-11-20

申请号：US10431399

申请日：2003-05-06

申请人： Anantha K. Subramani ,  Anthony Vesci ,  Scott Dickerson

发明人： Anantha K. Subramani ,  Anthony Vesci ,  Scott Dickerson

IPC分类号： C25D5/10 ,  C25D5/22 ,  C25D7/00

CPC分类号： C23C14/3414

摘要： A method of fabricating a sputtering target for sputter depositing material onto a substrate in a sputtering chamber is described. In one embodiment of the method, a preform having a surface is formed and a layer of sputtering material is electroplated onto the surface of the preform to form the target. The method can be applied to form a sputtering target having a non-planar surface.

摘要翻译： 描述了一种制造溅射靶的方法，溅射靶用于溅射沉积溅射室中的衬底上的材料。 在该方法的一个实施例中，形成具有表面的预成型件，并且将溅射材料层电镀到预型件的表面上以形成靶。 该方法可以应用于形成具有非平面表面的溅射靶。

公开(公告)号：US09905443B2

公开(公告)日：2018-02-27

申请号：US13598828

申请日：2012-08-30

申请人： Anantha K. Subramani ,  Joseph M. Ranish ,  Xiaoxiong Yuan ,  Ashish Goel ,  Joung Joo Lee

发明人： Anantha K. Subramani ,  Joseph M. Ranish ,  Xiaoxiong Yuan ,  Ashish Goel ,  Joung Joo Lee

IPC分类号： C23C14/54 ,  C23C16/48 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67115 ,  C23C14/541 ,  C23C16/481 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68742

摘要： Apparatus for improving temperature uniformity across a substrate are provided herein. In some embodiments, a deposition ring for use in a substrate processing system to process a substrate may include an annular body having a first surface, an opposing second surface, and a central opening passing through the first and second surfaces, wherein the second surface is configured to be disposed over a substrate support having a support surface to support a substrate having a given width, and wherein the opening is sized to expose a predominant portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect heat energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface.

公开(公告)号：US20120258602A1

公开(公告)日：2012-10-11

申请号：US13082968

申请日：2011-04-08

申请人： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

发明人： Anantha K. Subramani ,  John C. Forster ,  Seshadri Ganguli ,  Michael S. Jackson ,  Xinliang Lu ,  Wei W. Wang ,  Xinyu Fu ,  Yu Lei

IPC分类号： H01L21/31

CPC分类号： C23C16/08 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.

摘要翻译： 提供了使用CVD和ALD技术形成和处理纯金属层的方法。 在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。 在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。 还提供了防止氢等离子体渗透金属前体层的方法。

公开(公告)号：US06884329B2

公开(公告)日：2005-04-26

申请号：US10340564

申请日：2003-01-10

申请人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

发明人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76877

摘要： A method of filling copper into a high-aspect ratio via by a plasma sputter process and allowing the elimination of electrochemical plating. In one aspect of the invention, the sputtering is divided into a first step performed at a low temperature of no more than 100° C. and with at least portions of high wafer bias, thereby filling a lower half of the hole, and a second step performed at a higher temperature, e.g., at least 200° C. and with at least portions of low wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma. In still another aspect, copper sputtering, even in the final fill phase, is performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter from the corners.

摘要翻译： 一种通过等离子体溅射工艺将铜填充到高纵横比通孔并允许消除电化学电镀的方法。 在本发明的一个方面，溅射被分为在不超过100℃的低温下进行的第一步骤和至少部分高晶片偏压，从而填充孔的下半部分，并且第二步骤 步骤在较高的温度例如至少200℃进行，并且至少部分低晶片偏置以完成孔填充。 在本发明的另一方面，将扩散促进气体如氢气加入到铜溅射等离子体中。 在另一方面，即使在最终填充阶段，铜溅射也是通过多个低级和高级底座偏压循环进行的，以便在暴露的拐角上沉积铜并从拐角溅射。

公开(公告)号：USD665071S1

公开(公告)日：2012-08-07

申请号：US29411698

申请日：2012-01-25

申请人： Ashish Goel ,  Anantha K. Subramani

设计人： Ashish Goel ,  Anantha K. Subramani

公开(公告)号：US20130139878A1

公开(公告)日：2013-06-06

申请号：US13266738

申请日：2011-04-07

申请人： Yashraj K. Bhatnagar ,  Brenden McComb ,  Xiao Ming ,  Deepak Jadhav ,  Anantha K. Subramani ,  Wei D. Wang ,  Jianshe Tang

发明人： Yashraj K. Bhatnagar ,  Brenden McComb ,  Xiao Ming ,  Deepak Jadhav ,  Anantha K. Subramani ,  Wei D. Wang ,  Jianshe Tang

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/04

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/076 ,  H01L31/1864 ,  Y02E10/548

摘要： Embodiments of the invention provide a method for forming a solar cell including forming a layer comprising alumina on a substrate and forming a transparent conductive layer on the layer comprising alumina. The method may also include forming a transparent conductive seed layer on the layer comprising alumina and forming a transparent conductive bulk layer on the transparent conductive seed layer. Embodiments of the invention also include photovoltaic devices having a substrate, a layer comprising alumina adjacent to the substrate, a zinc oxide-containing transparent conductive seed layer adjacent to the layer comprising alumina, and a zinc oxide-containing transparent conductive bulk layer adjacent the zinc oxide-containing transparent conductive seed layer.

摘要翻译： 本发明的实施例提供了一种形成太阳能电池的方法，包括在基底上形成包含氧化铝的层，并在包含氧化铝的层上形成透明导电层。 该方法还可以包括在包含氧化铝的层上形成透明导电籽晶层，并在透明导电种子层上形成透明导电体层。 本发明的实施例还包括具有基底的光伏器件，与基底相邻的氧化铝层，与氧化铝相邻的含氧化锌的透明导电籽晶层和与锌相邻的含氧化锌的透明导电体层 含氧化物的透明导电种子层。