公开(公告)号：US20090122459A1

公开(公告)日：2009-05-14

申请号：US12318488

申请日：2008-12-30

申请人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

发明人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

IPC分类号： H01L21/683

CPC分类号： H01L21/6875 ,  H01L21/6833 ,  H02N13/00

摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

公开(公告)号：US20090045514A1

公开(公告)日：2009-02-19

申请号：US11839410

申请日：2007-08-15

申请人： Tadahiro ISHIZAKA ,  Shigeru Mizuno

发明人： Tadahiro ISHIZAKA ,  Shigeru Mizuno

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  C23C16/36 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.

摘要翻译： 该方法包括提供含有具有凹陷特征的介电层的基板，并在凹陷特征的表面上形成铝钽碳氮化物阻挡膜。 通过沉积多个碳氮化钽膜并在多个碳氮化钽薄膜中的每一个之间沉积铝来形成氮化钽碳氮化物阻挡膜。 一个实施例还包括在氮化钽碳氮化物阻挡膜上沉积Ru膜，在Ru膜上沉积Cu籽晶层，并用体积Cu填充凹陷特征。 描述了包含氮化钽碳氮化物阻挡膜的半导体器件。

公开(公告)号：US6059985A

公开(公告)日：2000-05-09

申请号：US826735

申请日：1997-04-04

申请人： Takanori Yoshimura ,  Shigeru Mizuno ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Nobuyuki Takahashi

发明人： Takanori Yoshimura ,  Shigeru Mizuno ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Nobuyuki Takahashi

IPC分类号： H01L21/28 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/68

CPC分类号： H01L21/0209

摘要： A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.

摘要翻译： 处理基板的方法具有以下处理。 在通过CVD法将薄膜沉积到基板上之后，使基板的前表面靠近气体供给机构的气体供给表面，使其具有期望的间隔而不会在前表面和气体供给表面之间接触。 然后，将蚀刻气体供给到基板的后部空间中以在其中产生等离子体，并且还将吹扫气体供应到气体供给表面和基板之间的空间中，使得净化气体通过 衬底的周边边缘区域。 这种净化气体防止包括在等离子体中的自由基扩散到气体供应表面和基底之间的空间中。

公开(公告)号：US4508567A

公开(公告)日：1985-04-02

申请号：US391879

申请日：1982-06-24

申请人： Shigeru Mizuno ,  Masahiko Suzuki ,  Haruki Mizuno ,  Masutaro Katsu

发明人： Shigeru Mizuno ,  Masahiko Suzuki ,  Haruki Mizuno ,  Masutaro Katsu

IPC分类号： B22F3/00 ,  B22F1/00 ,  B29C33/00 ,  B29C43/00 ,  B29C43/02 ,  B29C43/32 ,  C22C32/00 ,  H02K1/02

CPC分类号： H02K1/02 ,  B22F1/00 ,  C22C32/0094 ,  Y10T29/49009

摘要： A flux-path forming member of a motor is prepared from a mixture mass by evenly mixing up to 4% of a thermosetting resin binder and molybdenum disulfide with at least 96% of a metal powder, fibrous metal, or a combination thereof; a second step of compacting in a mold under pressure the mixture mass into a desired shape; and a third step of heating, concurrently with or subsequently to the second step, the mixture mass to an elevated temperature to cure the binder portion thereof. The compact prepared by the above process is also disclosed. The content of the thermosetting resin at least 0.2 percent by weight, and the content of the molybdenum disulfide is at least 0.1 percent by weight. The curing operation is conducted at a temperature not higher than 300.degree. C.

摘要翻译： 通过将至多4％的热固性树脂粘合剂和二硫化钼与至少96％的金属粉末，纤维金属或其组合的均匀混合，由混合物质制备电动机的通量通路形成部件; 在模具中在压力下将混合物块压实成所需形状的第二步骤; 以及第三步骤，将所述混合物料同时或随后加热至高温以固化其粘合剂部分。 还公开了通过上述方法制备的压块。 热固性树脂的含量至少为0.2重量％，二硫化钼的含量为0.1重量％以上。 固化操作在不高于300℃的温度下进行

公开(公告)号：US07935393B2

公开(公告)日：2011-05-03

申请号：US11835210

申请日：2007-08-07

申请人： Shigeru Mizuno ,  Takashi Sakuma ,  Yasushi Mizusawa

发明人： Shigeru Mizuno ,  Takashi Sakuma ,  Yasushi Mizusawa

IPC分类号： C23C14/00 ,  H05H1/24

CPC分类号： H01J37/32568 ,  H01J37/32091

摘要： Embodiments of a method and system for improving the consistency of a layer or a plurality of layers with a desired profile in a deposition system are generally described herein. Other embodiments may be described and claimed.

摘要翻译： 这里一般地描述了用于在沉积系统中改善具有所需轮廓的层或多个层的稠度的方法和系统的实施例。 可以描述和要求保护其他实施例。

公开(公告)号：US20100248473A1

公开(公告)日：2010-09-30

申请号：US12414917

申请日：2009-03-31

申请人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Satohiko Hoshino ,  Hiroyuki Nagai ,  Yuki Chiba ,  Frank M. Cerio, JR.

发明人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Satohiko Hoshino ,  Hiroyuki Nagai ,  Yuki Chiba ,  Frank M. Cerio, JR.

IPC分类号： H01L21/768 ,  H01L21/3205

CPC分类号： H01L21/76849 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76883

摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.

摘要翻译： 一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。 在一个实施例中，该方法包括提供含有金属表面和电介质层表面的图案化衬底，以及通过暴露于含有疏水官能团的反应气体来修饰电介质层表面，其中修饰取代介电层表面中的亲水性官能团 具有疏水官能团。 该方法还包括通过将改性的介电层表面和金属表面暴露于含有金属的前体蒸气的沉积气体中，将金属含有的盖层选择性地沉积在金属表面上。

公开(公告)号：US07791857B2

公开(公告)日：2010-09-07

申请号：US12318488

申请日：2008-12-30

申请人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

发明人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

IPC分类号： H01T23/00

CPC分类号： H01L21/6875 ,  H01L21/6833 ,  H02N13/00

摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

公开(公告)号：US07750484B2

公开(公告)日：2010-07-06

申请号：US12146003

申请日：2008-06-25

申请人： Shigeru Mizuno ,  Takashi Kurihara

发明人： Shigeru Mizuno ,  Takashi Kurihara

IPC分类号： H01L23/498

CPC分类号： H01L24/81 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81405 ,  H01L2224/81825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method of manufacturing a semiconductor device in which a semiconductor element 10 is mounted on a substrate 20 through a flip-chip connection, includes the steps of cladding gallium as a bonding material 30 to a connecting pad 22 formed on a surface of the substrate 20, diffusing copper from the connecting pad 22 formed of the copper into the bonding material 30 through heating under vacuum, thereby bringing a state of a solid solution of the gallium and the copper, and aligning a connecting bump 12 formed on the semiconductor element 10 with the connecting pad 22 and bonding the connecting bump 12 to the connecting pad 22 through the bonding material 30 in a state of a solid solution under heating.

摘要翻译： 通过倒装芯片连接将半导体元件10安装在基板20上的半导体器件的制造方法包括以下步骤：将形成在基板20的表面上的连接焊盘22作为接合材料30包覆镓 通过在真空下加热将铜从铜连接焊盘22扩散到接合材料30中，从而使镓和铜的固溶状态，并使形成在半导体元件10上的连接凸块12与形成在半导体元件10上的连接凸块12与 连接焊盘22，并且在加热下处于固溶状态下，通过接合材料30将连接凸块12接合到连接焊盘22。

公开(公告)号：US07731187B2

公开(公告)日：2010-06-08

申请号：US11699405

申请日：2007-01-30

申请人： Toru Horio ,  Minoru Hattori ,  Shigeru Mizuno ,  Ikumi Takashima ,  Koji Furuta ,  Masanobu Kimata ,  Miyuki Ito ,  Yoshihide Sugiyama ,  Akihiro Tsuno ,  Nakayama Naoya ,  Ueno Shinichi

发明人： Toru Horio ,  Minoru Hattori ,  Shigeru Mizuno ,  Ikumi Takashima ,  Koji Furuta ,  Masanobu Kimata ,  Miyuki Ito ,  Yoshihide Sugiyama ,  Akihiro Tsuno ,  Nakayama Naoya ,  Ueno Shinichi

IPC分类号： B65H31/10

CPC分类号： B65H33/08 ,  B65H31/34 ,  B65H2301/3621 ,  B65H2301/4219 ,  B65H2405/351

摘要： A sheet medium adjustment apparatus, e.g., in an image forming system, includes: an ejector to eject a conveyed sheet; a stacking device to stack each sheet ejected from the sheet ejector into a stack on a tray; a moving device to shift the stacking device in a movement direction perpendicular to a sheet-ejecting direction; a sheet aligning member to align ends of the sheets in the stack that are parallel to the sheet-ejecting direction; a stepping motor to move the sheet aligning member; and an evacuation device to evacuate the aligning member by an amount representing an evacuation displacement in the movement direction at a timing of aligning the sheet, the evacuation displacement being determined adaptively according to at least one of an attribute of a given sheet in the stack, an attribute of the stack as a whole and an attribute of the tray.

摘要翻译： 片状介质调节装置，例如在图像形成系统中，包括：喷射器，用于喷射传送的片材; 堆叠装置，用于将从片材喷射器排出的每个片材堆叠在托盘上的堆叠中; 移动装置，用于沿垂直于纸张排出方向的移动方向移动所述堆叠装置; 片材对准构件，用于对准堆叠中与片材排出方向平行的片材的端部; 用于移动所述纸对齐部件的步进电机; 以及抽出装置，用于在对准所述片材的定时将所述对准构件排出表示所述移动方向上的抽空位移的量，所述抽空位移根据所述堆叠中的给定片材的属性中的至少一个自适应地确定， 整个堆栈的属性和托盘的属性。

公开(公告)号：US20100078818A1

公开(公告)日：2010-04-01

申请号：US12242416

申请日：2008-09-30

申请人： Tadahiro Ishizaka ,  Shigeru Mizuno

发明人： Tadahiro Ishizaka ,  Shigeru Mizuno

IPC分类号： H01L23/48

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76873

摘要： An interconnect structure is provided. The interconnect structure includes an interconnect opening formed within a dielectric material, a diffusion barrier on the dielectric material, where the diffusion barrier contains a compound from a thermal reaction between cobalt (Co) metal from at least a portion of a cobalt metal layer formed on the dielectric material and a dielectric reactant element from the dielectric material. The interconnect structure further includes a cobalt nitride adhesion layer in the interconnect opening, and a Cu metal fill in the interconnect opening, wherein the diffusion barrier and the cobalt nitride adhesion layer surround the Cu metal fill within the interconnect opening.

摘要翻译： 提供互连结构。 所述互连结构包括形成在电介质材料内的互连开口，介电材料上的扩散阻挡层，其中所述扩散阻挡层包含来自在钴金属层的至少一部分上形成的钴（Co）金属之间的热反应的化合物 电介质材料和介电反应物元件。 所述互连结构还包括所述互连开口中的氮化钴粘合层和所述互连开口中的Cu金属填充物，其中所述扩散阻挡层和所述钴酸钾粘附层围绕所述互连开口内的所述Cu金属填充物。