摘要:
A heat pipe for cooling an exothermic body by the vaporization and condensation of an enclosed cooling medium is disclosed. The heat pipe comprises a flat plate-like upper plate, a flat plate-like lower plate opposed to the upper plate, and a plurality of flat plate-like intermediate plates overlaid on each other between the upper plate and the lower plate and having internal through-holes. The internal through-holes formed in each of a plurality of the intermediate plates are adapted such that only part of each through-hole is overlapped on each other to form capillary tube paths, each having a cross-sectional area smaller than the cross-sectional area of the through-hole in the flat surface direction.
摘要:
In a semiconductor device, a plurality of wiring films are formed on a front surface of a base comprising an insulating resin and having electrode-forming holes, the surfaces of the wiring films and the surface of the base being positioned on the same plane and at least parts of the wiring films overlapping with the electrode-forming holes; a conductive material is embedded into the electrode-forming holes to form external electrodes on the back surface, away from the wiring films, of the base; a semiconductor element is positioned on the front surface of the base with an insulating film therebetween, the back surface of the semiconductor element being bonded to said front surface of the base; wires bond the electrodes of the semiconductor element to the corresponding wiring films; and a resin seals the wiring films and the wires.
摘要:
Metal films (for instance, gold films or palladium films) to constitute bumps are formed on a metal base by electrolytic plating. Then, a circuit wiring including inner leads is formed by electrolytic plating with a metal so that the inner leads are connected to the respective metal films.
摘要:
To enable readily forming the etching stop layer of a lead frame with multilayer structure by plating without using a large-scale device, enhance adhesive strength between the etching stop layer and an adjacent metal layer and prevent peeling caused by deterioration caused by the invasion of a chemical between the etching stop layer and each adjacent metal layer from occurring, an etching stop layer is formed by nickel or a nickel alloy in a method of manufacturing a lead frame at least provided with an etching process for selectively etching metal layers using an etching stop layer as an etching stopper in a state in which a thick metal layer is formed on one side of the etching stop layer as an intermediate layer and a thin metal layer is formed on the other side and a process for etching the etching stop layer using the metal layers on both sides as a mask.
摘要:
In a lead frame, leads are formed on a surface of protective insulation film having a device hole. Protruding electrodes (solder balls) are formed on the surface of the leads opposite the surface closer to the protective insulation film. A reinforcement plate is also formed on the rear surface of the protective insulation film.
摘要:
According to a method of manufacturing a semiconductor package of the present invention, a plurality of leads and a large number of minute convex portions are respectively formed by plating on a surface of a metal base and in an outer peripheral area of the leads thereon. An insulative film for holding each of the leads is formed. A solder resist film is formed selectively on a portion including the outer peripheral area having the minute convex portions thereon. A projecting electrode is formed on an outer lead portion of each of the leads through an opening of the solder resist film on an outer lead portion of each of the leads. The metal base is selectively removed except a joint portion thereof on an outer periphery to separate the respective leads. Inner lead portions of the leads and a semiconductor chip are jointed together. The joint portion of the metal base is cut off.
摘要:
Leads are formed on a surface of an etching stop film of a base, and holes are defined in the base and a region of a substrate which corresponds to a lead-forming region is thinned by selective etching on both upper and lower surfaces of the base. A lead holder film having a device hole and an outer lead bonding slit is applied to the upper surface of the base. The thinned region of the substrate is removed by selective etching on the lower surface of the base, and the etching stop film is etched away.
摘要:
Disclosed is a semiconductor device comprising a lead frame which includes a metal layer forming an outer lead, a thin metal layer forming an inner lead, an intermediate layer held between the thick metal layer and the thin metal layer for forming a connection portion between the outer lead and the inner lead and a bump positioned at the extreme end of the lead frame, whereby making the lead frame as an electrode leading means by directly connecting the bump to each electrode of a semiconductor element, wherein the lead formed of the thick metal layer has a thickness of 30 to 300 .mu.m, the lead formed of the thin metal layer has a thickness of 10 to 50 .mu.m, and the bump has thickness of 5 to 50 .mu.m.
摘要:
A heat pipe for cooling an exothermic body by the vaporization and condensation of an enclosed cooling medium is disclosed. The heat pipe comprises a flat plate-like upper plate, a flat plate-like lower plate opposed to the upper plate, and a plurality of flat plate-like intermediate plates overlaid on each other between the upper plate and the lower plate and having internal through-holes. The internal through-holes formed in each of a plurality of the intermediate plates are adapted such that only part of each through-hole is overlapped on each other to form capillary tube paths, each having a cross-sectional area smaller than the cross-sectional area of the through-hole in the flat surface direction.
摘要:
A thin and flat type heat pipe with enhanced conductivity. Between an upper member 22 having a rectangular area 24b on a lower surface and a lower member 20 having a rectangular area 24a on an upper area are provided intermediate plate members 32, 30. The members 32, 30 are each formed with slits 8, constructing a vapor path extending a planar direction, communicating with the rectangular areas 24a, 24b of the members 22, 20, respectively. Thus, a sealed space is defined by the slits 8 and the rectangular areas 24a, 24b so that a refrigerant is enclosed in the sealed space. Capillary holes 10 are formed through non-slitted portions of the intermediate plate members 32, 30 so that each capillary hole 10 serves as a capillary path of flow extending vertically to communicate with the rectangular areas 24a, 24b of the members 22, 20.