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    Plasma reactor with uniform process rate distribution by improved RF ground return path
    11.
    发明授权
    Plasma reactor with uniform process rate distribution by improved RF ground return path 有权
    等离子体反应器具有均匀的加工速率分布，通过改进的射频接地回路

    公开(公告)号：US08360003B2

    公开(公告)日：2013-01-29

    申请号：US12501966

    申请日：2009-07-13

    申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

    摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

    摘要翻译： 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

    PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH
    12.
    发明申请
    PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH 有权
    具有均匀加工速率分布的等离子体反应器通过改进的RF接地返回路径

    公开(公告)号：US20110005685A1

    公开(公告)日：2011-01-13

    申请号：US12501966

    申请日：2009-07-13

    申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    IPC分类号： C23F1/08 ,  C23C16/503

    CPC分类号： H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

    摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

    摘要翻译： 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

    Apparatus for forming a magnetic field and methods of use thereof
    13.
    发明授权
    Apparatus for forming a magnetic field and methods of use thereof 有权
    用于形成磁场的装置及其使用方法

    公开(公告)号：US08773020B2

    公开(公告)日：2014-07-08

    申请号：US13097800

    申请日：2011-04-29

    申请人： Gary Leray ,  Shahid Rauf ,  Valentin N. Todorow

    发明人： Gary Leray ,  Shahid Rauf ,  Valentin N. Todorow

    IPC分类号： G21K1/093 ,  H01J37/32 ,  H05H1/04

    CPC分类号： H01J37/321 ,  H01J37/32669

    摘要： Apparatus for forming a magnetic field and methods of use thereof are provided herein. In some embodiments, a plurality of coils having substantially similar dimensions disposed about a process chamber in a symmetric pattern centered about a central axis of the process chamber, wherein the plurality of coils are configured to produce a magnetic field having a plurality of magnetic field lines that are substantially planar and substantially parallel. In some embodiments, the plurality of coils comprises eight coils disposed about the process chamber, wherein each of the eight coils is offset by an angle of about 45 degrees from respective adjacent coils of the eight coils.

    摘要翻译： 本文提供了形成磁场的装置及其使用方法。 在一些实施例中，具有基本相似的尺寸的多个线圈以围绕处理室的中心轴线为中心的对称图案围绕处理室布置，其中多个线圈被配置为产生具有多个磁场线的磁场 其基本上是平面的并且基本上平行。 在一些实施例中，多个线圈包括围绕处理室布置的八个线圈，其中八个线圈中的每一个与八个线圈的相应相邻线圈相距大约45度的角度偏移。

    Field enhanced inductively coupled plasma (Fe-ICP) reactor
    14.
    发明授权
    Field enhanced inductively coupled plasma (Fe-ICP) reactor 有权
    场增强电感耦合等离子体（Fe-ICP）反应器

    公开(公告)号：US08299391B2

    公开(公告)日：2012-10-30

    申请号：US12182342

    申请日：2008-07-30

    申请人： Valentin N. Todorow ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

    发明人： Valentin N. Todorow ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

    IPC分类号： B23K10/00

    CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/321

    摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.

    摘要翻译： 本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。 在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。 等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中， 或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。 在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。