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    Methods for fabricating current-carrying structures using voltage switchable dielectric materials
    14.
    发明申请
    Methods for fabricating current-carrying structures using voltage switchable dielectric materials 失效
    使用可开关电介质材料制造载流结构的方法

    公开(公告)号：US20050039949A1

    公开(公告)日：2005-02-24

    申请号：US10941226

    申请日：2004-09-14

    Applicant: Lex Kosowsky

    Inventor： Lex Kosowsky

    IPC: C25D5/54 ,  H05K1/02 ,  H05K1/03 ,  H05K1/16 ,  H05K3/18 ,  H05K3/42 ,  C25D5/48 ,  H01L21/20 ,  H01L21/3205 ,  H01R12/04 ,  H05K1/11

    CPC classification number: H05K3/188 ,  C25D5/54 ,  H05K1/0254 ,  H05K1/0373 ,  H05K1/167 ,  H05K3/423 ,  H05K3/426 ,  H05K2201/0215 ,  H05K2201/0738 ,  H05K2203/105

    Abstract: A method is provided for fabricating current-carrying formation on substrates. The method includes providing a substrate including a layer of a voltage switchable dielectric material, forming a mask over the layer of the voltage switchable dielectric material, and forming an electrically conductive layer. The mask includes gaps and the electrically conductive layer is formed in the gaps. The voltage switchable dielectric material has a characteristic voltage and the electrically conductive layer is formed by applying a voltage in excess of the characteristic voltage to the substrate and depositing the electrically conductive material through an electrochemical process such as electroplating.

    Abstract translation: 提供了一种用于在衬底上制造载流形成的方法。 该方法包括提供包括可切换电介质材料层的衬底，在电压可切换电介质材料的层上形成掩模，以及形成导电层。 掩模包括间隙，并且导电层形成在间隙中。 电压可切换介电材料具有特征电压，并且通过向基板施加超过特征电压的电压并且通过诸如电镀的电化学过程沉积导电材料来形成导电层。

    Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same
    16.
    发明授权
    Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same 失效
    具有阶梯式电压响应的电压可切换介电材料的配方及其制造方法

    公开(公告)号：US08163595B2

    公开(公告)日：2012-04-24

    申请号：US12953309

    申请日：2010-11-23

    Applicant: Lex Kosowsky ,  Robert Fleming

    Inventor： Lex Kosowsky ,  Robert Fleming

    IPC: H01L51/40

    CPC classification number: H01L21/02118 ,  B82Y30/00 ,  H01C7/12 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/318 ,  Y10S438/90

    Abstract: Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials may comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.

    Abstract translation: 可变压电介质材料的配方包括均匀分散在电介质基质材料中的两种或多种不同类型的半导体材料。 选择半导体材料具有不同的带隙能量，以便提供具有阶梯式电压响应的电压可切换介电材料。 半导体材料可以包括无机颗粒，有机颗粒或可溶于介质基质材料或与之混溶的有机材料。 制剂任选地还可以包括导电材料。 制剂中的导电或半导体材料中的至少一种可以包括以纵横比为至少3或更大的特征的颗粒。

    EMI Voltage Switchable Dielectric Materials Having Nanophase Materials
    19.
    发明申请
    EMI Voltage Switchable Dielectric Materials Having Nanophase Materials 审中-公开
    具有纳米相材料的EMI电压可切换介质材料

    公开(公告)号：US20110198544A1

    公开(公告)日：2011-08-18

    申请号：US13031071

    申请日：2011-02-18

    Applicant: Lex Kosowsky ,  Robert Fleming ,  Junjun Wu ,  Thangamani Ranganathan

    Inventor： Lex Kosowsky ,  Robert Fleming ,  Junjun Wu ,  Thangamani Ranganathan

    IPC: H01B1/12 ,  H01B3/00 ,  H01B1/02 ,  B82Y99/00

    CPC classification number: H01B3/004 ,  B82Y30/00 ,  H05K1/0254 ,  H05K2201/0738

    Abstract: Various embodiments of the invention disclosed herein provide for adjusting the electrical response of a voltage switchable dielectric material by incorporating one or more nanophase materials. Various aspects provide for a VSDM having improved electrical and/or physical properties. In some cases, a VSDM may have improved (e.g., lower) leakage current at a given voltage. A VSDM may have improved resistance to ESD events, and may have improved resistance to degradation associated with protecting against an ESD event.

    Abstract translation: 本文公开的本发明的各种实施例提供了通过并入一种或多种纳米相材料来调节可切换电介质材料的电响应。 各种方面提供具有改进的电和/或物理性质的VSDM。 在一些情况下，VSDM可以在给定电压下具有改善的（例如较低）的漏电流。 VSDM可以具有改善的对ESD事件的抵抗力，并且可以改善与防​​止ESD事件相关的降解抗性。

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