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    HORIZONTALLY ORIENTED AND VERTICALLY STACKED MEMORY CELLS
    16.
    发明申请
    HORIZONTALLY ORIENTED AND VERTICALLY STACKED MEMORY CELLS 有权
    水平方向和垂直堆叠的记忆细胞

    公开(公告)号：US20150221866A1

    公开(公告)日：2015-08-06

    申请号：US14688502

    申请日：2015-04-16

    Applicant: Micron Technology, Inc.

    Inventor： Timothy A. Quick ,  Eugene P. Marsh

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L27/2481 ,  H01L27/2463 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675

    Abstract: Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator material on the first memory cell material, a second memory cell material on the second insulator material, and a third insulator material on the second memory cell material, forming an electrode adjacent a first side of the first memory cell material and a first side of the second memory cell material, and forming an electrode adjacent a second side of the first memory cell material and a second side of the second memory cell material.

    Abstract translation: 本文描述了水平方向和垂直堆叠的存储器单元。 一个或多个方法实施例包括形成具有第一绝缘体材料的垂直堆叠，第一绝缘体材料上的第一存储单元材料，第一存储单元材料上的第二绝缘体材料，第二绝缘体材料上的第二存储单元材料，以及 在所述第二存储单元材料上的第三绝缘体材料，形成邻近所述第一存储单元材料的第一侧的电极和所述第二存储单元材料的第一侧，以及在所述第一存储单元材料的第二侧附近形成电极，以及 第二存储单元材料的第二侧。

    Horizontally oriented and vertically stacked memory cells
    17.
    发明授权
    Horizontally oriented and vertically stacked memory cells 有权
    水平方向和垂直堆叠的存储单元

    公开(公告)号：US09024283B2

    公开(公告)日：2015-05-05

    申请号：US13759576

    申请日：2013-02-05

    Applicant: Micron Technology, Inc.

    Inventor： Timothy A. Quick ,  Eugene P. Marsh

    IPC: H01L29/02 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L27/2481 ,  H01L27/2463 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675

    Abstract: Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator material on the first memory cell material, a second memory cell material on the second insulator material, and a third insulator material on the second memory cell material, forming an electrode adjacent a first side of the first memory cell material and a first side of the second memory cell material, and forming an electrode adjacent a second side of the first memory cell material and a second side of the second memory cell material.

    Abstract translation: 本文描述了水平方向和垂直堆叠的存储器单元。 一个或多个方法实施例包括形成具有第一绝缘体材料的垂直堆叠，第一绝缘体材料上的第一存储单元材料，第一存储单元材料上的第二绝缘体材料，第二绝缘体材料上的第二存储单元材料，以及 在所述第二存储单元材料上的第三绝缘体材料，形成邻近所述第一存储单元材料的第一侧的电极和所述第二存储单元材料的第一侧，以及在所述第一存储单元材料的第二侧附近形成电极，以及 第二存储单元材料的第二侧。

    METHODS OF FORMING A METAL TELLURIDE MATERIAL, RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    18.
    发明申请
    METHODS OF FORMING A METAL TELLURIDE MATERIAL, RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES 有权
    形成金属陶瓷材料的方法，形成半导体器件结构的相关方法以及相关的半导体器件结构

    公开(公告)号：US20140227863A1

    公开(公告)日：2014-08-14

    申请号：US14252959

    申请日：2014-04-15

    Applicant: Micron Technology, Inc.

    Inventor： Timothy A. Quick ,  Stefan Uhlenbrock ,  Eugene P. Marsh

    IPC: H01L21/02

    CPC classification number: H01L21/02568 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02614 ,  H01L21/0262 ,  H01L31/0324

    Abstract: Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

    Abstract translation: 因此，形成金属硫族化物材料的方法可以包括将至少一种金属前体和至少一种硫属前体引入包含基底的室中，所述至少一种金属前体包含碱金属的胺或亚胺化合物，碱 土金属，过渡金属，后过渡金属或准金属，以及所述至少一种硫族元素前体包含硫，硒或碲的氢化物，烷基或芳基化合物。 所述至少一种金属前体和所述至少一种硫属前体可以反应以在所述基底上形成金属硫族化物材料。 还描述了形成金属碲化物材料的方法，形成半导体器件结构的方法和半导体器件结构。

    SEMICONDUCTOR DEVICE STRUCTURES INCLUDING METAL OXIDE STRUCTURES, AND RELATED METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES
    20.
    发明申请
    SEMICONDUCTOR DEVICE STRUCTURES INCLUDING METAL OXIDE STRUCTURES, AND RELATED METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES 有权
    包括金属氧化物结构的半导体器件结构以及形成半导体器件结构的相关方法

    公开(公告)号：US20140151843A1

    公开(公告)日：2014-06-05

    申请号：US14176574

    申请日：2014-02-10

    Applicant: Micron Technology, Inc.

    Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

    IPC: H01L29/06 ,  H01L21/28

    CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

    Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

    Abstract translation: 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个与所述至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。

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