公开(公告)号：US20080283878A1

公开(公告)日：2008-11-20

申请号：US11750473

申请日：2007-05-18

申请人： Srikanteswara Dakshina-Murthy ,  Chew Hoe Ang

发明人： Srikanteswara Dakshina-Murthy ,  Chew Hoe Ang

IPC分类号： H01L23/482 ,  H01L21/4763 ,  H01L29/772 ,  H01L29/78 ,  H01L21/66

CPC分类号： H01L21/28035 ,  H01L22/20 ,  H01L22/34 ,  H01L29/78

摘要： Various apparatus and methods of monitoring endcap pullback are disclosed. In one aspect, an apparatus is provided that includes a substrate that has a plurality of semiconductor regions. Each of the plurality of semiconductor regions has a border with an insulating structure. A transistor is positioned in each of the plurality of semiconductor regions. Each of the transistors includes a gate that has a first lateral dimension and an end that has a position relative to its border. A voltage source is electrically coupled to the transistors whereby levels of currents flowing through the transistors are indicative of the positions of the ends of the gates relative to their borders.

摘要翻译： 公开了监测端帽回退的各种装置和方法。 一方面，提供了一种包括具有多个半导体区域的基板的装置。 多个半导体区域中的每一个具有与绝缘结构的边界。 晶体管位于多个半导体区域的每一个中。 每个晶体管包括具有第一横向尺寸的门和具有相对于其边界的位置的端部。 电压源电耦合到晶体管，因此流过晶体管的电流水平指示栅极的端部相对于其边界的位置。

公开(公告)号：US07386162B1

公开(公告)日：2008-06-10

申请号：US10874498

申请日：2004-06-23

申请人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

发明人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC分类号： G06K9/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/67242

摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for imprint mask critical dimension error(s). An aspect of the invention generates feedback information that facilitates control of imprint mask critical dimension via employing a scatterometry system to detect imprint mask critical dimension error, and mitigating the error via a spacer etchback procedure.

摘要翻译： 本发明一般涉及光刻系统和方法，更具体地涉及有助于补偿压印掩模临界尺寸误差的系统和方法。 本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测压印掩模临界尺寸误差并通过间隔回蚀程序来减轻误差，从而有助于控制压印掩模临界尺寸。

公开(公告)号：US07376259B1

公开(公告)日：2008-05-20

申请号：US10874499

申请日：2004-06-23

申请人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

发明人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC分类号： G06K9/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.

摘要翻译： 本发明一般涉及光刻系统和方法，更具体地涉及修改压印掩模的系统和方法。 本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测地形变化和减小压印掩模特征高度以便补偿地形变化，从而有助于控制印迹掩模特征高度。

公开(公告)号：US06833588B2

公开(公告)日：2004-12-21

申请号：US10274867

申请日：2002-10-22

申请人： Bin Yu ,  Shibly S. Ahmed ,  Judy Xilin An ,  Srikanteswara Dakshina-Murthy ,  Zoran Krivokapic ,  Haihong Wang

发明人： Bin Yu ,  Shibly S. Ahmed ,  Judy Xilin An ,  Srikanteswara Dakshina-Murthy ,  Zoran Krivokapic ,  Haihong Wang

IPC分类号： H01L2701

CPC分类号： H01L29/785 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/66803

摘要： A double-gate semiconductor device includes a substrate, an insulating layer, a fin and a gate. The insulating layer is formed on the substrate and the gate is formed on the insulating layer. The fin has a number of side surfaces, a top surface and a bottom surface. The bottom surface and at least a portion of the side surfaces of the fin are surrounded by the gate. The gate material surrounding the fin has a U-shaped cross-section at a channel region of the semiconductor device.

公开(公告)号：US06787476B1

公开(公告)日：2004-09-07

申请号：US10632989

申请日：2003-08-04

申请人： Srikanteswara Dakshina-Murthy ,  Cyrus E. Tabery ,  Chih-Yuh Yang ,  Bin Yu

发明人： Srikanteswara Dakshina-Murthy ,  Cyrus E. Tabery ,  Chih-Yuh Yang ,  Bin Yu

IPC分类号： H01L21302

CPC分类号： H01L29/785 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/4908 ,  H01L29/66795

摘要： A method of forming a gate for a Fin Field Effect Transistor (FinFET) is provided. The method includes forming a first layer of material over a fin and forming a second layer over the first layer. The second layer includes either Ti or TiN. The method further includes forming a third layer over the second layer. The third layer includes an anti-reflective coating. The method also includes etching the first, second and third layers to form the gate for the FinFET.

摘要翻译： 提供了一种形成Fin场效应晶体管（FinFET）的栅极的方法。 该方法包括在翅片上形成第一层材料，并在第一层上形成第二层。 第二层包括Ti或TiN。 该方法还包括在第二层上形成第三层。 第三层包括抗反射涂层。 该方法还包括蚀刻第一，第二和第三层以形成用于FinFET的栅极。

公开(公告)号：US06764949B2

公开(公告)日：2004-07-20

申请号：US10334392

申请日：2002-12-30

申请人： Douglas J. Bonser ,  Marina V. Plat ,  Chih Yuh Yang ,  Scott A. Bell ,  Darin Chan ,  Philip A. Fisher ,  Christopher F. Lyons ,  Mark S. Chang ,  Pei-Yuan Gao ,  Marilyn I. Wright ,  Lu You ,  Srikanteswara Dakshina-Murthy

发明人： Douglas J. Bonser ,  Marina V. Plat ,  Chih Yuh Yang ,  Scott A. Bell ,  Darin Chan ,  Philip A. Fisher ,  Christopher F. Lyons ,  Mark S. Chang ,  Pei-Yuan Gao ,  Marilyn I. Wright ,  Lu You ,  Srikanteswara Dakshina-Murthy

IPC分类号： H01L2144

CPC分类号： H01L21/32139 ,  H01L21/0332

摘要： A hardmask stack is comprised of alternating layers of doped amorphous carbon and undoped amorphous carbon. The undoped amorphous carbon layers serve as buffer layers that constrain the effects of compressive stress within the doped amorphous carbon layers to prevent delamination. The stack is provided with a top capping layer. The layer beneath the capping layer is preferably undoped amorphous carbon to reduce photoresist poisoning. An alternative hardmask stack is comprised of alternating layers of capping material and amorphous carbon. The amorphous carbon layers may be doped or undoped. The capping material layers serve as buffer layers that constrain the effects of compressive stress within the amorphous carbon layers to prevent delamination. The top layer of the stack is formed of a capping material. The layer beneath the top layer is preferably undoped amorphous carbon to reduce photoresist poisoning. The lowest layer of the hardmask stack is preferably amorphous carbon to facilitate easy removal of the hardmask stack from underlying materials by an ashing process.

公开(公告)号：US06589858B1

公开(公告)日：2003-07-08

申请号：US10163534

申请日：2002-06-07

申请人： Srikanteswara Dakshina-Murthy ,  Paul R. Besser

发明人： Srikanteswara Dakshina-Murthy ,  Paul R. Besser

IPC分类号： H01L213205

CPC分类号： H01L21/32136 ,  Y10S438/97

摘要： A metal gate structure and method of making the same provides a tracer layer over a first metal or metal compound layer. When etching a metal gate, formed of tungsten, for example, with a first etchant chemistry optimized for etching tungsten, detection of the tracer layer through optical emission spectroscopy, for example, indicates the imminent clearing of the tungsten. A second etchant chemistry is then employed that is selective to the first metal or metal compound layer, such as TiN, overlying the gate dielectric. This provides a controlled etching of the TiN and thereby prevents degradation of the underlying gate dielectric material.

摘要翻译： 金属栅结构及其制造方法在第一金属或金属化合物层上提供示踪层。 当例如用钨蚀刻金属栅极时，例如，用蚀刻钨优化的第一蚀刻剂化学品，例如通过光学发射光谱法检测示踪剂层，表明钨的即将清除。 然后使用对覆盖栅极电介质的第一金属或金属化合物层（例如TiN）具有选择性的第二蚀刻剂化学。 这提供了对TiN的受控蚀刻，从而防止下面的栅介质材料的劣化。

公开(公告)号：US06579801B1

公开(公告)日：2003-06-17

申请号：US09997986

申请日：2001-11-30

申请人： Srikanteswara Dakshina-Murthy ,  Christoph Schwan ,  Jeffrey C. Haines

发明人： Srikanteswara Dakshina-Murthy ,  Christoph Schwan ,  Jeffrey C. Haines

IPC分类号： H01L21311

CPC分类号： H01L21/31116 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/76232

摘要： Various methods of fabricating substrate trenches and isolation structures therein are disclosed. In one aspect, a method of fabricating a trench in a substrate is provided. An oxide/nitride stack is formed on the substrate. An opening with opposing sidewalls is plasma etched in the silicon nitride film until a first portion of the oxide film is exposed while second and third portions of the oxide film positioned on opposite sides of the first portion remain covered by first and second portions of the silicon nitride film that project inwardly from the opposing sidewalls. The oxide film is etched for a selected time period in order to expose a portion of the substrate and to define first and second oxide/nitride ledges that project inwardly from the opposing sidewalls. The substrate is etched to form the trench with the first and second oxide/nitride ledges protecting underlying portions of the substrate.

摘要翻译： 公开了在其中制造衬底沟槽和隔离结构的各种方法。 一方面，提供了在衬底中制造沟槽的方法。 在基板上形成氧化物/氮化物堆叠。 具有相对的侧壁的开口在氮化硅膜中被等离子体蚀刻，直到氧化膜的第一部分暴露，而位于第一部分的相对侧上的氧化膜的第二和第三部分保持被硅的第一和第二部分覆盖 氮化物膜从相对的侧壁向内突出。 在选择的时间段内蚀刻氧化膜以暴露衬底的一部分并且限定从相对的侧壁向内突出的第一和第二氧化物/氮化物凸缘。 蚀刻衬底以与保护衬底下部的第一和第二氧化物/氮化物凸缘形成沟槽。

公开(公告)号：US06511911B1

公开(公告)日：2003-01-28

申请号：US09824218

申请日：2001-04-03

申请人： Paul R. Besser ,  Srikanteswara Dakshina-Murthy

发明人： Paul R. Besser ,  Srikanteswara Dakshina-Murthy

IPC分类号： H01L2144

CPC分类号： H01L21/28088 ,  H01L29/4966

摘要： A metal gate structure and method of forming the same employs an etch stop layer between a first metal layer, made of TiN, for example, and the metal gate formed of tungsten. The etch stop layer prevents overetching of the TiN during the etching of the tungsten in the formation of the metal gate. The prevention of the overetching of the TiN protects the gate oxide from undesirable degradation. The provision of aluminum or tantalum in the etch stop layer allows a thin etch stop layer to be used that provides adequate etch stopping capability and does not undesirably affect the work function of the TiN.

公开(公告)号：US06500755B2

公开(公告)日：2002-12-31

申请号：US09731577

申请日：2000-12-06

申请人： Srikanteswara Dakshina-Murthy ,  Paul R. Besser ,  Jonathan B. Smith ,  Eric M. Apelgren ,  Christian Zistl ,  Jeremy I. Martin ,  Lie Larry Zhao ,  Nicholas John Kepler

发明人： Srikanteswara Dakshina-Murthy ,  Paul R. Besser ,  Jonathan B. Smith ,  Eric M. Apelgren ,  Christian Zistl ,  Jeremy I. Martin ,  Lie Larry Zhao ,  Nicholas John Kepler

IPC分类号： H01L214763

CPC分类号： H01L21/76816 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

摘要： The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.

摘要翻译： 本发明涉及一种形成半导体器件的方法。 在一个说明性实施例中，该方法包括在形成在电介质材料层上方的光致抗蚀剂层中限定具有第一尺寸的光致抗蚀剂特征。 该方法还包括减小光致抗蚀剂特征的第一尺寸以产生减小尺寸的光致抗蚀剂特征，在减小尺寸的光致抗蚀剂特征下的电介质材料层中形成开口，以及在电介质材料层中的开口中形成导电材料 。