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公开(公告)号：US08222655B2
公开(公告)日：2012-07-17
申请号：US12223739
申请日：2007-02-08
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).
摘要翻译： 本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7） 在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5） 有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。
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公开(公告)号：US08030669B2
公开(公告)日：2011-10-04
申请号：US11662541
申请日：2005-09-12
申请人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
发明人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/62 , H01L2224/24 , H01L2924/12044 , H01L2924/00
摘要： There is provided a highly reliable semiconductor light emitting device even in using for street lamps or traffic signals, which can be used in place of electric lamps or fluorescent lamps by protecting from surges such as static electricity or the like. A plurality of light emitting units (1) are formed, by forming a semiconductor lamination portion by laminating semiconductor layers on a substrate so as to form a light emitting layer, by electrically separating the semiconductor lamination portion into a plurality, and by providing a pair of electrodes (19) and (20). The light emitting units (1) are respectively connected in series and/or in parallel with wiring films (3). An inductor (8) absorbing surges is connected, in series, to the plurality of light emitting units (1) connected in series between electrode pads (4a) and (4b) connected to an external power source. For an example, the inductor (8) is formed by arranging the plurality of light emitting units (1) in a whirl shape.
摘要翻译： 提供了一种高可靠性的半导体发光装置，即使用于路灯或交通信号灯，也可以通过防止诸如静电等的浪涌而代替电灯或荧光灯。 通过在基板上层叠半导体层以形成发光层，通过将半导体层叠部分电分离成多个并通过提供一对形成半导体层叠部分而形成多个发光单元（1） 的电极（19）和（20）。 发光单元（1）分别与布线膜（3）串联和/或并联连接。 吸收浪涌的电感器（8）串联连接到串联连接到连接到外部电源的电极焊盘（4a）和（4b）之间的多个发光单元（1）。 例如，电感器（8）通过将多个发光单元（1）布置成旋转形状而形成。
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13.发明申请NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR 审中-公开氮化物半导体发光元件和制造氮化物半导体的方法公开(公告)号：US20100133506A1
公开(公告)日：2010-06-03
申请号：US12452060
申请日：2008-06-13
摘要： Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer (2) is formed on a sapphire substrate (1), and nitride semiconductors of an n-type AlGaN layer (3), an InGaN/GaN active layer (4) and a p-type GaN layer (5) are layered in sequence on the buffer layer (2). An n-electrode (7) is formed on a surface of the n-type AlGaN layer (3), and a p-electrode (6) is formed on the p-type GaN layer (5). The n-type AlGaN layer (3) serves as a cladding layer for confining light and carriers. The AlN buffer layer (2) is manufactured by alternately supplying an Al material and an N material at a growing temperature of 900° C. or higher.
摘要翻译： 提供一种氮化物半导体发光元件，其具有层叠在AlN缓冲层上的氮化物半导体，其具有改善的质量，例如晶体质量和改善的发光输出，以及制造氮化物半导体的方法。 在蓝宝石衬底（1）上形成AlN缓冲层（2），并且n型AlGaN层（3），InGaN / GaN有源层（4）和p型GaN层（5）的氮化物半导体 在缓冲层（2）上依次分层。 在n型AlGaN层（3）的表面上形成n电极（7），在p型GaN层（5）上形成p电极（6）。 n型AlGaN层（3）用作限制光和载流子的包覆层。 AlN缓冲层（2）通过在900℃以上的生长温度下交替地供给Al材料和N材料来制造。
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公开(公告)号：US20100019257A1
公开(公告)日：2010-01-28
申请号：US11815759
申请日：2006-02-07
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译： 提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。 在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。 第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5））， 并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。 通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。
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公开(公告)号：US07375380B2
公开(公告)日：2008-05-20
申请号：US10551922
申请日：2005-07-11
CPC分类号： H01L33/42 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.
摘要翻译： 半导体发光器件包括具有第一导电性的第一接触层，第二导电性的第二接触层和夹在第一和第二接触层之间的有源层的半导体发光部。 该装置还包括透明电极，其基本上完全覆盖第二接触层的与第二接触层的表面欧姆接触的表面，并且对于从半导体发光部分发射的光的波长是透明的，并且金属反射膜 其与透明电极的大致整个表面相对并且电连接到透明电极，并且反射从半导体发光部分发射的光并且透过透明电极朝向半导体发光部分。
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公开(公告)号：US20070278502A1
公开(公告)日：2007-12-06
申请号：US11662542
申请日：2005-09-12
申请人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
发明人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： C09K11/584 , C09K11/642 , C09K11/7701 , H01L27/156 , H01L33/50 , H01L33/54 , H01L33/62 , H01L2224/24 , H01L2924/12044 , H01L2924/00
摘要： There is provided a semiconductor light emitting device which can prevent flickering in illumination due to an alternative current drive, and sensing incongruity at a time of turning off a switch, by providing anti-flickering means in itself, when it is assembled in an illumination device without any extra parts therein. A plurality of light emitting units (1) are formed, by forming a semiconductor lamination portion (17) by laminating semiconductor layers on a substrate (11) so as to form a light emitting layer, by electrically separating the semiconductor lamination portion (17) into a plurality of units, and by providing a pair of electrodes (19) and (20). The light emitting units (1) are respectively connected in series and/or parallel with a wiring film (3). A fluorescent layer (6) containing a fluorescent material having an afterglow time of 10 msec or more and 1 sec or less and/or a layer containing a phosphorescent glass material are formed at a light emitting surface side of the plurality of light emitting units (1).
摘要翻译： 提供了一种半导体发光装置，其可以防止由于替代电流驱动而在照明中闪烁，并且在关闭开关时感测到不协调，通过在其组装在照明装置中时提供防闪烁装置 没有任何额外的零件。 通过在基板（11）上层叠半导体层以形成发光层，通过将半导体层叠部（17）电分离而形成半导体层叠部（17），形成多个发光单元（1） 并且通过提供一对电极（19）和（20）来形成多个单元。 发光单元（1）分别与布线膜（3）串联和/或并联连接。 在多个发光单元的发光面侧形成含有余辉时间为10msec以上1sec以下的荧光体和/或含有磷光玻璃材料的层的荧光体层（6） 1）。
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公开(公告)号：US6107644A
公开(公告)日：2000-08-22
申请号：US12209
申请日：1998-01-23
摘要： A semiconductor light emitting device has semiconductor layers including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on a substrate. A first electrode is formed in electrical connection with the first conductivity type semiconductor layer on a surface side of the semiconductor layers. The second conductivity type semiconductor layer is exposed by partly etch-removing an end portion of the semiconductor layers. A second electrode is provided in electrical connection with the exposed second conductivity type layer. The first and second electrodes are formed such that the electrodes are in parallel, in plan form, with each other at opposite portions thereof. As a result, the current path is constant in electric resistance, providing a semiconductor light emitting device that is constant in brightness, long in service life and high in brightness.
摘要翻译： 半导体发光器件具有包括形成在衬底上的第一导电类型半导体层和第二导电类型半导体层的半导体层。 第一电极在半导体层的表面侧与第一导电类型半导体层电连接形成。 通过部分蚀刻除去半导体层的端部来暴露第二导电类型半导体层。 提供与暴露的第二导电类型电连接的第二电极。 第一和第二电极被形成为使得电极在平面形式上彼此平行，彼此相对。 结果，电流路径恒定，提供亮度恒定，使用寿命长，亮度高的半导体发光元件。
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18.发明授权Light emitting semiconductor device having an improved outward luminosity efficiency and fabrication method for the light emitting semiconductor device 有权具有改善的向外发光效率的发光半导体器件和用于发光半导体器件的制造方法公开(公告)号：US08415682B2
公开(公告)日：2013-04-09
申请号：US12318118
申请日：2008-12-22
IPC分类号： H01L27/00
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/22 , H01L33/32
摘要： A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity.
摘要翻译： 提供一种半导体发光器件及其外部发光效率提高的半导体发光器件的制造方法，并且半导体发光器件包括衬底; 保护膜放置在基板上; n型半导体层，其被放置在由保护膜夹持的基板上并在保护膜上，并掺杂有n型杂质; 放置在n型半导体层上的有源层以及置于有源层上并掺杂有p型杂质的p型半导体层。
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公开(公告)号：US20090127572A1
公开(公告)日：2009-05-21
申请号：US11920980
申请日：2006-05-23
申请人： Haruo Tanaka , Masayuki Sonobe
发明人： Haruo Tanaka , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , H01L33/10 , H01L33/32 , H01S5/187
摘要： There is provided a nitride semiconductor light emitting device capable of inhibiting output deterioration of light emission caused by quality deterioration of a nitride semiconductor layer due to lattice-mismatching between a substrate and the nitride semiconductor layer, and utilizing light traveling to the substrate efficiently, while forming a light emitting device of a vertical type which has one electrode on a back surface of the substrate by using the substrate made of SiC. A light reflecting layer (2) which is formed by laminating low refractive index layers (21) and high refractive index layers (22) having different refractive indices alternately is directly provided on the SiC substrate (1), and a semiconductor lamination portion (5) which is formed by laminating nitride semiconductor layers so as to form at least a light emitting layer forming portion (3) is provided on the light reflecting layer (2). An upper electrode (7) is provided on an upper surface side of the semiconductor lamination portion (5), and a lower electrode (8) is provided on a back surface of the SiC substrate (1).
摘要翻译： 提供一种氮化物半导体发光器件，其能够抑制由于衬底和氮化物半导体层之间的晶格失配而导致的氮化物半导体层的质量恶化引起的发光的劣化，并且利用有效地传播到衬底的光，同时 通过使用由SiC制成的基板，在基板的背面形成具有一个电极的垂直型发光元件。 在SiC基板（1）上直接设置由层叠低折射率层（21）和折射率不同的高折射率层（22）形成的光反射层（2），半导体层叠部 ），其通过层叠氮化物半导体层以形成至少一个发光层形成部分（3）形成，设置在光反射层（2）上。 在半导体层叠部（5）的上表面侧设置上电极（7），在SiC基板（1）的背面设有下电极（8）。
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20.发明申请公开(公告)号：US20070108519A1
公开(公告)日：2007-05-17
申请号：US10583092
申请日：2004-12-16
申请人： Norikazu Ito , Masayuki Sonobe , Daisuke Nakagawa
发明人： Norikazu Ito , Masayuki Sonobe , Daisuke Nakagawa
IPC分类号： H01L29/76
CPC分类号： H01L33/32 , H01L33/145
摘要： A semiconductor lamination portion (6) is formed by laminating at least an n-type layer (3) and a p-type layer (5) made of gallium nitride based compound semiconductor so as to form a light emitting portion, and a light transmitting conductive layer (7) is formed on a surface of the semiconductor lamination portion. An upper electrode (8) is formed so as to adhere to an exposed surface of the semiconductor lamination portion exposed by etching a part of the light transmitting conductive layer, and to the light transmitting conductive layer. An electric current blocking means (10) is formed on the exposed surface of the semiconductor lamination portion which is exposed through an opening (7a) of the light transmitting conductive layer, thereby significantly preventing electric current from flowing into a part under the upper electrode while ensuring good adhesion between the upper electrode and the surface of the semiconductor lamination portion. Consequently, there can be obtained a semiconductor light emitting device using gallium nitride based compound semiconductor wherein external quantum efficiency is improved by suppressing light emission under the upper electrode while enhancing adhesion between the upper electrode and the semiconductor layer.
摘要翻译： 半导体层叠部分（6）通过层叠至少一个由氮化镓基化合物半导体制成的n型层（3）和p型层（5）形成，以形成发光部分 导电层（7）形成在半导体层叠部分的表面上。 形成上电极（8），以便通过蚀刻一部分透光导电层而露出的半导体层叠部分的露出表面和透光导电层。 在通过透光导电层的开口（7a）暴露的半导体层叠部分的暴露表面上形成电流阻挡装置（10），从而显着地防止电流流入上电极 同时确保上电极和半导体层叠部分的表面之间的良好粘合。 因此，可以获得使用氮化镓基化合物半导体的半导体发光器件，其中通过抑制上部电极下的发光，同时增强上部电极和半导体层之间的粘附性来提高外部量子效率。
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