公开(公告)号：US4840487A

公开(公告)日：1989-06-20

申请号：US875980

申请日：1986-06-19

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： H01L21/66 ,  G01B11/00 ,  G01B11/22 ,  H01J37/32

CPC分类号： H01J37/32935 ,  G01B11/22

摘要： An apparatus for measuring dry etching pits formed in a semiconductor device during the manufacture thereof by employing optical means. Wiring on semiconductor devices increasingly become fine or minute, i.e., the size of wiring of some devices is less than 1 .mu.m. A technical matter to be solved is to effect highly accurate dimensional measurement in such submicron region. The apparatus has a .theta. stage which is additionally provided on an XY stage, and a mechanism which provides excellent selectivity in detection of interference intensity of diffracted beam. In addition, a short wavelength laser, such as a He-Ne, He-Cd, N.sub.2 or Ar laser, is employed as a laser source. As a practical advantage, it is possible to monitor etching of a pit with a depth on the order of 10 .mu.m with respect to a pattern with a planar dimension of 0.3 .mu.m to 1.0 .mu.m.

摘要翻译： 一种用于测量在其制造期间在半导体器件中形成的干蚀刻凹坑的装置，其通过采用光学装置。 半导体器件上的布线越来越细微或微小，即某些器件的布线尺寸小于1μm。 要解决的技术问题是在这样的亚微米区域中实现高度精确的尺寸测量。 该装置具有另外设置在XY平台上的θ级，以及在检测衍射光束的干涉强度方面提供优异的选择性的机构。 此外，使用诸如He-Ne，He-Cd，N2或Ar激光器的短波长激光器作为激光源。 作为实际的优点，可以相对于平面尺寸为0.3μm〜1.0μm的图案来监视深度为10μm左右的凹坑的蚀刻。

公开(公告)号：US4808258A

公开(公告)日：1989-02-28

申请号：US662014

申请日：1984-10-18

申请人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Minoru Noguchi ,  Teru Fujii

发明人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Minoru Noguchi ,  Teru Fujii

IPC分类号： H01L21/302 ,  C23C16/517 ,  H01J37/32 ,  C23F1/02 ,  H01L21/306

CPC分类号： H01J37/32146 ,  C23C16/517 ,  H01J37/32155 ,  H01J37/32165

摘要： A plasma processing method and an apparatus for carrying out the method in which a processing gas is introduced into a processing chamber, and periodically an amplitude modulated or frequency-modulated high-frequency voltage is applied to plasma generating means, to generate a discharge plasma and to carry out predetermined processing by the plasma.

摘要翻译： 一种等离子体处理方法和装置，用于执行将处理气体引入处理室，并周期性地将调幅或调频的高频电压施加到等离子体产生装置，以产生放电等离子体和 以进行等离子体的预定处理。

公开(公告)号：US4405435A

公开(公告)日：1983-09-20

申请号：US296314

申请日：1981-08-26

申请人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

发明人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

IPC分类号： B01J3/00 ,  C23C14/56 ,  C23C15/00

CPC分类号： B01J3/006 ,  C23C14/566 ,  Y10S414/137 ,  Y10S414/139

摘要： An apparatus for performing continuous treatment in vacuum including an inlet chamber, a first intermediate chamber, at least one vacuum treating chamber, a second intermediate chamber and a withdrawing chamber arranged in the indicated order in a direction in which base plates are successively transferred. An opening device normally closed and opened when a base plate is transferred therethrough is mounted on a wall at the inlet of the inlet chamber, between the adjacent chambers and on a wall at the outlet side of the withdrawing chamber. A conveyor device for conveying each base plate in a horizontal direction through the opening device is mounted in each of the chambers, and an evacuating device is also mounted in each chamber. A base plate storing device for storing a plurality of base plates in a magazine is mounted in the first and second intermediate chambers. At least one vacuum treating device is mounted in the vacuum treating chamber.

摘要翻译： 一种用于在真空中进行连续处理的装置，包括入口室，第一中间室，至少一个真空处理室，第二中间室和排出室，其按照依次传送基板的方向以指示的顺序排列。 安装在入口室入口的壁上，在相邻的室之间和在抽出室的出口侧的壁上的壁上安装有一个通常关闭和打开底板的打开装置。 用于通过打开装置沿水平方向输送每个基板的输送装置安装在每个室中，并且排气装置也安装在每个室中。 在第一和第二中间室中安装有用于将多个基板存储在盒中的基板存储装置。 至少一个真空处理装置安装在真空处理室中。

公开(公告)号：US4170418A

公开(公告)日：1979-10-09

申请号：US689818

申请日：1976-05-25

申请人： Susumu Aiuchi ,  Minoru Ikeda ,  Yoshio Matsumoto

发明人： Susumu Aiuchi ,  Minoru Ikeda ,  Yoshio Matsumoto

IPC分类号： G03B27/32 ,  G03F9/00 ,  G05D3/12 ,  H01L21/027 ,  H01L21/30 ,  G01B11/26

CPC分类号： G03F9/70

摘要： An alignment apparatus, in which a mask is overlaid on a wafer and a relative displacement between the wafer and a target pattern formed on the mask is detected to effect alignment thereof, comprises a slit frame adapted to reciprocate in a direction substantially parallel to the top surface of the mask and having a slit formed therein, an illumination optical system for illuminating the target pattern, an image formation optical system for forming the image of the target pattern onto the slit of the slit frame, a light sensing element mounted on the slit frame for detecting the target pattern image formed by the image formation optical system through the slit to convert the image into an electric signal, and a displacement detector for detecting the amount of movement of the reciprocation of the slit frame to convert the amount of movement into a position signal which the light sensing element scans, whereby the output signals from the displacement detector and the light sensing element are used to detect the relative position between the mask and the target pattern on the wafer and the mask is moved relative to the wafer such that the relative displacement amount becomes zero.

摘要翻译： 其中掩模覆盖在晶片上并且在晶片和形成在掩模上的目标图案之间的相对位移被检测以对准其中的对准装置，包括适于沿基本上平行于顶部的方向往复运动的狭缝框架 表面，其中形成有狭缝，用于照射目标图案的照明光学系统，用于将目标图案的图像形成在狭缝框的狭缝上的图像形成光学系统，安装在狭缝上的光感测元件 框架，用于通过狭缝检测由图像形成光学系统形成的目标图案图像，以将图像转换为电信号;以及位移检测器，用于检测狭缝框架的往复运动量以将移动量转换为 光感测元件扫描的位置信号，从而来自位移检测器和感光元件的输出信号 nt用于检测晶片上的掩模和目标图案之间的相对位置，并且掩模相对于晶片移动，使得相对位移量变为零。

公开(公告)号：US06693699B2

公开(公告)日：2004-02-17

申请号：US10234578

申请日：2002-09-06

申请人： Takashi Inoue ,  Shigenobu Maruyama ,  Toshio Asano ,  Susumu Aiuchi ,  Takeo Sawaguchi ,  Rokuro Watanabe

发明人： Takashi Inoue ,  Shigenobu Maruyama ,  Toshio Asano ,  Susumu Aiuchi ,  Takeo Sawaguchi ,  Rokuro Watanabe

IPC分类号： G02F113

CPC分类号： G02F1/1333 ,  G02F1/1309

摘要： A method for repairing a liquid crystal display provided with a light transmitting member having an image display section. The method includes filling a filler, which has a refractive index substantially equal to that of the light transmitting member, into a scratch or scratches formed on inside and outside surfaces of the light transmitting member so as to repair the scratch or scratches.

摘要翻译： 一种修补液晶显示器的方法，该液晶显示器具有带有图像显示部分的透光部件。 该方法包括将具有与透光构件的折射率基本相等的折射率的填充物填充到形成在透光构件的内表面和外表面上的划痕或划痕，以修复划痕或划痕。

公开(公告)号：US4933565A

公开(公告)日：1990-06-12

申请号：US216834

申请日：1988-07-08

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

IPC分类号： G01Q10/00 ,  G01Q70/14 ,  G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F1/74 ,  G03F1/22

摘要： The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a circuit pattern having a defective portion located under the region or setting this circuit pattern to the state near the exposure; detecting one of the secondary electrons, secondary ions, reflected electrons, or absorbing current generated from that region and detecting a true defective position. Then positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion thereby correcting the defect.

公开(公告)号：US4536419A

公开(公告)日：1985-08-20

申请号：US474032

申请日：1983-03-10

申请人： Hitoshi Kubota ,  Minoru Tanaka ,  Susumu Aiuchi

发明人： Hitoshi Kubota ,  Minoru Tanaka ,  Susumu Aiuchi

IPC分类号： C23C14/04 ,  C23C11/00 ,  C23C13/00

CPC分类号： C23C14/044

摘要： Method for forming thin films on a substrate by using a mask through dry process wherein the substrate and the mask are moved relative to each other at least once for the formation of a thin film before the thickness of the thin film being formed on the substrate reaches a predetermined value, so that the formed thin film has an outer edge partly or entirely contoured stepwise.

摘要翻译： 通过使用通过干法的掩模在基板上形成薄膜的方法，其中在形成薄膜的薄膜的厚度在形成在基板上的厚度达到之前，基板和掩模相对于彼此移动至少一次以形成薄膜 使得所形成的薄膜具有部分或全部轮廓的外边缘。

公开(公告)号：US4401539A

公开(公告)日：1983-08-30

申请号：US343858

申请日：1982-01-29

申请人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

发明人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3426 ,  H01J37/3408 ,  H01J37/3458 ,  H01J37/347

摘要： A sputtering apparatus of the planar magnetron type is disclosed, in which a low-pressure gas is ionized by glow discharge, ions in the plasma are accelerated by a voltage applied between a cathode and an anode to bombard a target structure, atoms or particles of a target material sputtered from the planar target plate by the bombardment of ions are deposited on a substrate disposed on the anode side, and thus a thin film made of the same material as the target material is formed on the substrate. In view of the facts that lines of magnetic flux generated by a single magnetic flux source does not link each other and the Maxwell stress, the target structure includes the planar target plate and a magnetic flux source having at least three pole pieces in an arrangement that the planar target plate is disposed between the anode and the magnetic flux source, and the amount of magnetic flux starting from a portion of the pole pieces is controlled to control the amount of magnetic flux (or the flux density) existing at the remaining pole pieces and the magnetic flux distribution above the planar target plate, thereby controlling the position of a region where the plasma is formed.

摘要翻译： 公开了一种平面磁控管型的溅射装置，其中通过辉光放电使低压气体离子化，等离子体中的离子被施加在阴极和阳极之间的电压加速，以轰击靶结构，原子或颗粒 通过离子轰击从平面靶板溅射的靶材料沉积在设置在阳极侧的基板上，因此在基板上形成由与靶材料相同的材料制成的薄膜。 鉴于由单个磁通源产生的磁通线不彼此连接和麦克斯韦应力的事实，目标结构包括平面靶板和具有至少三个极片的磁通源，其结构设置为 平面靶板设置在阳极和磁通源之间，并且从极片的一部分开始的磁通量被控制以控制存在于剩余极片的磁通量（或磁通密度） 以及平面靶板上方的磁通分布，从而控制形成等离子体的区域的位置。

公开(公告)号：US06552771B1

公开(公告)日：2003-04-22

申请号：US09461730

申请日：1999-12-16

申请人： Takashi Inoue ,  Shigenobu Maruyama ,  Toshio Asano ,  Susumu Aiuchi ,  Takeo Sawaguchi ,  Rokuro Watanabe

发明人： Takashi Inoue ,  Shigenobu Maruyama ,  Toshio Asano ,  Susumu Aiuchi ,  Takeo Sawaguchi ,  Rokuro Watanabe

IPC分类号： G02F11336

CPC分类号： G02F1/1333 ,  G02F1/1309

摘要： An image display device for repairing a scratch or scratches on a surface or surfaces of a light transmitting member having an image display section such an extent that the presence of the scratch or scratches cannot be visually perceived at at least in a bright view distance in all directions, and in which device a liquid filler having a refractive index equivalent to or on the same order of that of the light transmitting member is locally filled only into an area of the scratch or scratches, and the filler is cured. By controlling an amount of the filler so that a difference in level between a surface of the light transmitting member and a surface of the filler is at least ±5.0 &mgr;m or less and that an angle defined between a surface of the filler and a surface of the light transmitting member is at least 45 degrees or less or preferably at least 10 degrees or less, it is possible to exhibit display quality to such a degree that the presence of the scratch or scratches cannot be recognized.

摘要翻译： 一种图像显示装置，用于修复具有图像显示部分的光透射部件的表面或划痕上的划痕或划痕，其程度使得在至少所有的亮视距离中不能视觉地感觉划痕或划痕的存在 方向，并且在该装置中，具有与透光构件的折射率相同或相同的折射率的液体填充剂局部地填充到划痕或划痕的区域中，并且填料被固化。 通过控制填充剂的量使得透光构件的表面与填料的表面之间的水平差异至少为±5.0μm或更小，并且在填料的表面和表面之间限定的角度 透光构件为至少45度以下，优选为10度以下，可以显示出不能识别出划痕或划痕的程度的显示质量。

公开(公告)号：US4721553A

公开(公告)日：1988-01-26

申请号：US769505

申请日：1985-08-23

申请人： Hiroshi Saito ,  Yasumichi Suzuki ,  Shuuzoo Sano ,  Tamotsu Shimizu ,  Susumu Aiuchi

发明人： Hiroshi Saito ,  Yasumichi Suzuki ,  Shuuzoo Sano ,  Tamotsu Shimizu ,  Susumu Aiuchi

IPC分类号： H01L21/203 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC分类号： C23C14/357 ,  H01J37/3405

摘要： Disclosed herein are apparatuses of several types for forming a film at an increased rate that is necessary for putting the microwave assisting sputtering into practice on an industrial scale. The feature resides in that a plasma is maintained uniformly on the whole surface of target composed of a material to be sputtered. This makes it possible to avoid the target from being thermally destroyed by the increased energy of sputtering. Further, in order to prevent damage on a substrate on which the film is to be sputtered by plasma for sputtering, consideration is given to the arrangement of magnetic devices in order to form the film by positively introducing the plasma onto the substrate on which the film is to be formed and, at the same time, effecting the sputtering. There are further disclosed an apparatus in which the plasma is generated by microwaves at a position close to the target to effectively utilize the energy of microwaves for the sputtering, and a cathode structure on which a conical target is placed by taking into consideration the fact that the sputtered particles emitted from the target travel in compliance with the cosine law.

摘要翻译： 本文公开了用于以工业规模将微波辅助溅射实际需要的以增加的速率形成膜的几种类型的装置。 特征在于，等离子体被均匀地保持在由要溅射的材料组成的靶的整个表面上。 这使得可以避免由于溅射的能量的增加而使靶被热破坏。 此外，为了防止溅射等离子体溅射膜的基板上的损伤，考虑到磁性器件的布置，以便通过将等离子体正向地引入到基板上形成膜，其中膜 并且同时进行溅射。 还公开了一种装置，其中等离子体是通过微波在靠近目标的位置产生的，以有效地利用微波的能量进行溅射，而阴极结构通过考虑以下事实放置圆锥形目标： 从目标行程发射的溅射颗粒符合余弦定律。