Abstract:
A thin type semiconductor package having a low thermal resistance and a low electric resistance is disclosed, that comprises a nitride ceramic supporting substrate having a first main surface and a second main surface, the nitride ceramic supporting substrate having via-holes that pass through from the first main surface to the second main surface, a resin film having a wiring layer, the resin film being bonded to the first main surface of the supporting substrate, the wiring layer being electrically connected to an edge portion of the via-holes on the first main surface, the resin film having an opening region, a semiconductor chip directly mounted on the first main surface of the nitride ceramic supporting substrate, disposed at the opening region of the resin film, and electrically connected to the wiring layer of the resin film, and external connection terminals disposed on the edge portion of the via-holes of the second main surface.
Abstract:
According to this invention, there is disclosed a thermal conductivity substrate which includes an aluminum nitride sintered body and a coating layer formed on the body of aluminum phosphate and having a surface roughness of 1 .mu.m or less, and which has excellent humidity resistance and chemical resistance.
Abstract:
A circuit board comprising a substrate, at least one dielectric film formed on the substrate and made of at least one selected from the group consisting of AlN, BN, diamond, diamond-like carbon, BeO and SiC, the dielectric film having pores of a porosity of 5 to 95% by volume, and at least one wiring metal film formed on the dielectric film.
Abstract:
A circuit substrate comprises a sintered oxide body of barium, tin and boron as an insulating body which is able to be fired at a temperature less than 1300.degree. C. The circuit substrate is further improved in moisture resistance by containing titanium or securing substantially the composition of BaSn(BO.sub.3).sub.2.
Abstract:
According to the present invention, a method is provided of manufacturing electronic parts, comprising a first step of forming on the surface of a substrate a bump wherein the metal particles of that portion of the bump which contacts the surface of the substrate have a larger diameter than the metal particles of that portion of the bump which does not contact the surface of the substrate, a second step of transferring the bump to an electrode lead, and a third step of connecting an electrode lead to a predetermined electrode section of the semiconductor chip, by means of the transferred bump. The method of the present invention ensures that the bump does not fall off during the electroplating and washing steps, and ensures a high-strength bond between the transferred bump and the electrode section of a semiconductor chip.
Abstract:
The present invention provides an electronic component part with terminal pins very closely and very strongly bonded to a high thermal conductivity ceramics circuit board and a method for simply and continuously manufacturing electronic component parts, with a high operability, each with terminal pins bonded to a high thermal conductivity ceramics circuit board. According to the present invention, an electronic component part is provided in which terminal pins are bonded to a high thermal conductivity ceramics circuit board by a brazing metal, containing at least one kind of Group IVa elements. In another aspect of the present invention a method is provided for manufacturing electronic component parts, which comprises the step of attaching terminal pins to a high thermal conductivity ceramics circuit board by a brazing paste layer comprised of brazing metal powder containing at least one kind of Group IVa elements, an acrylic binder with a carboxylic group as a substituent group and organic solvent, and heating the resultant structure in an atmosphere containing nitrogen as a principal element so that terminal pins are firmly bonded to a circuit board.
Abstract:
The vacuum-heat processing apparatus according to the present invention includes: a vacuum container forming a vacuum chamber; a hopper into which an object to be processed and a processing liquid adjusted to a first temperature are thrown, the hopper being arranged above and communicating with an intake port formed in an upper end portion of the vacuum container; a sealing member arranged between the hopper and the intake port of the vacuum container to keep the vacuum chamber airtight; a transport conveyor installed in the vacuum chamber below the intake port to receive at one end side thereof the object flowing down the hopper from the intake port through the sealing member and carry it to the other end side; a processing liquid showering nozzles installed in the vacuum chamber immediately above the transport conveyor to shower a processing liquid adjusted to a second temperature over the object on the transport conveyor; a processing liquid tank containing a processing liquid adjusted to a third temperature and installed in the vacuum chamber immediately below the transport conveyor to receive the object dropped from the transport conveyor; at least one liquid removing device provided immediately below and communicating with a discharge port formed in a lower end portion of the vacuum container to remove the processing liquid from the object; and a transport device installed in the vacuum chamber to carry the object in the processing liquid tank to the liquid removing device.
Abstract:
The vacuum-heat processing apparatus according to the present invention includes: a vacuum container forming a vacuum chamber; a hopper into which an object to be processed and a processing liquid adjusted to a first temperature are thrown, the hopper being arranged above and communicating with an intake port formed in an upper end portion of the vacuum container; a sealing member arranged between the hopper and the intake port of the vacuum container to keep the vacuum chamber airtight; a transport conveyor installed in the vacuum chamber below the intake port to receive at one end side thereof the object flowing down the hopper from the intake port through the sealing member and carry it to the other end side; a processing liquid showering nozzles installed in the vacuum chamber immediately above the transport conveyor to shower a processing liquid adjusted to a second temperature over the object on the transport conveyor; and a processing liquid tank containing a processing liquid adjusted to a third temperature and installed in the vacuum chamber immediately below the transport conveyor to receive the object dropped from the transport conveyor.
Abstract:
In such electronic components as semiconductor packages and semiconductor chips which are possessed of groups of connecting bumps as input and output terminals, the groups of connecting bumps comprise not less than two kinds of connecting bumps different in melting point or not less than two kinds of connecting bumps different in mechanical strength. The groups of connecting bumps comprise connecting bumps made of high temperature solder or connecting bumps made of a high strength In type solder in the part of formation thereof. The connecting bumps made of high temperature solder are not directly affected by the influence of displacement because they retain the shape of a ball even after the step of connection such as solder reflow. The connecting bumps made of In type solder form connecting parts of high strength. These groups of connecting bumps contribute to exalt the reliability of the connecting parts without decreasing the number of input and output terminals.
Abstract:
A circuit board including a circuit pattern adhered firmly to a ceramic substrate and capable of eliminating an increase in resistivity due to an influence of an external environment, particularly, a thermal influence is disclosed. The circuit board comprises a ceramic substrate, and a circuit pattern formed on the substrate and having a multilayered structure in which a bonding layer comprising Ti and at least one element selected from the group consisting of N and O, a conductor layer consisting essentially of Cu, and a protective layer comprising Ti and at least one element selected from the group consisting of N and O are stacked in the order named.