摘要:
In such electronic components as semiconductor packages and semiconductor chips which are possessed of groups of connecting bumps as input and output terminals, the groups of connecting bumps comprise not less than two kinds of connecting bumps different in melting point or not less than two kinds of connecting bumps different in mechanical strength. The groups of connecting bumps comprise connecting bumps made of high temperature solder or connecting bumps made of a high strength In type solder in the part of formation thereof. The connecting bumps made of high temperature solder are not directly affected by the influence of displacement because they retain the shape of a ball even after the step of connection such as solder reflow. The connecting bumps made of In type solder form connecting parts of high strength. These groups of connecting bumps contribute to exalt the reliability of the connecting parts without decreasing the number of input and output terminals.
摘要:
A circuit board including a circuit pattern adhered firmly to a ceramic substrate and capable of eliminating an increase in resistivity due to an influence of an external environment, particularly, a thermal influence is disclosed. The circuit board comprises a ceramic substrate, and a circuit pattern formed on the substrate and having a multilayered structure in which a bonding layer comprising Ti and at least one element selected from the group consisting of N and O, a conductor layer consisting essentially of Cu, and a protective layer comprising Ti and at least one element selected from the group consisting of N and O are stacked in the order named.
摘要:
According to this invention, there is disclosed a thermal conductivity substrate which includes an aluminum nitride sintered body and a coating layer formed on the body of aluminum phosphate and having a surface roughness of 1 .mu.m or less, and which has excellent humidity resistance and chemical resistance.
摘要:
A circuit board comprising a substrate, at least one dielectric film formed on the substrate and made of at least one selected from the group consisting of AlN, BN, diamond, diamond-like carbon, BeO and SiC, the dielectric film having pores of a porosity of 5 to 95% by volume, and at least one wiring metal film formed on the dielectric film.
摘要:
A plating solution is stored in an annular plating solution storage. A plating solution tank having an open upper portion is arranged in a hollow portion of the storage. A mesh-like anode electrode is arranged on the bottom portion of the plating tank. Hold members are attached to an upper side wall of the plating tank. One of the hold members is in contact with a portion to be plated of a semiconductor member and serves as a cathode electrode. The anode and cathode electrodes are connected to a DC power source. The plating solution in the plating solution tank is brought into contact with the portion to be plated and is isolated therefrom by an driving pump intermittently driven at predetermined intervals using an intermittent drive unit. The power source is kept in the ON state while the plating solution is in contact with the portion to be plated, there-by forming a plated layer on the portion to be plated.
摘要:
Disclosed is a bump formed on a pad which is provided on either a semiconductor chip or a package or a wiring substrate for input or output thereof, for making electric connection on the pad. The bump has: a projection projecting from the pad; a ball having conductivity and located above the pad; and a conductive bonding material for bonding the pad for and the ball, wherein creep strength of the ball is larger than strength of the conductive bonding material. With another conductive bonding material provided on the other pad of a wiring substrate or a package, the ball of the bump of the semiconductor chip or the package is placed close to another pad of the wiring substrate or package. The conductive bonding material of the other pad is heated and melted to connect the ball and the other pad of the wiring substrate or package by the conductive bonding material.
摘要:
A thin type semiconductor package having a low thermal resistance and a low electric resistance is disclosed, that comprises a nitride ceramic supporting substrate having a first main surface and a second main surface, the nitride ceramic supporting substrate having via-holes that pass through from the first main surface to the second main surface, a resin film having a wiring layer, the resin film being bonded to the first main surface of the supporting substrate, the wiring layer being electrically connected to an edge portion of the via-holes on the first main surface, the resin film having an opening region, a semiconductor chip directly mounted on the first main surface of the nitride ceramic supporting substrate, disposed at the opening region of the resin film, and electrically connected to the wiring layer of the resin film, and external connection terminals disposed on the edge portion of the via-holes of the second main surface.
摘要:
A display device comprises a first substrate which has a line-forming surface, a second substrate which is arranged opposite to the line-forming surface by a gap interposed and has peripheral edge bonded to the first substrate, a plurality of display elements which are provided between the first substrate and the second substrate, a plurality of lines which are formed on the line-forming surface, extend to the peripheral edge of the line-forming surface and supply a drive voltage to the display elements, and a drive circuit substrate which is arranged at the peripheral edge of the line-forming surface and on which drive circuit is mounted.
摘要:
Disclosed is a nonaqueous electrolyte secondary battery, comprising a case having a wall thickness not larger than 0.3 mm, a positive electrode provided in the case, a negative electrode provided in the case and the negative electrode containing a carbonaceous material capable of absorbing-desorbing lithium ions, and a nonaqueous electrolyte provided in the case and the nonaqueous electrolyte containing a nonaqueous solvent including γ-butyrolactone and a solute dissolved in the nonaqueous solvent, wherein after being discharged to 3V with a current of 0.2 C at room temperature, the voltage reduction caused by the self-discharge at 60° C. is not larger than 1.5V in 3 weeks.
摘要:
There is provided an image display apparatus including: a first substrate having an electron-emitting device; a second substrate having an anode electrode that is opposed to the electron-emitting device; and a conductive layer that is provided on the side of a second face of the second substrate, the second face being an opposite face to a first face of the second substrate, the first face being located on the first substrate side, wherein a potential of the conductive layer is set to be lower than a potential of the anode electrode when displaying an image; and a surface resistance of the conductive layer is higher than a surface resistance of the anode electrode.