公开(公告)号：US09939729B2

公开(公告)日：2018-04-10

申请号：US15259160

申请日：2016-09-08

申请人： JSR CORPORATION

发明人： Hisashi Nakagawa ,  Takehiko Naruoka ,  Tomoki Nagai

IPC分类号： G03F7/20 ,  G03F7/30 ,  G03F7/40 ,  G03F7/038 ,  G03F7/004 ,  G03F7/11 ,  C08F220/28 ,  C08F220/38 ,  C08F220/18 ,  G03F7/16 ,  G03F7/32

CPC分类号： G03F7/203 ,  C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  C08F2220/283 ,  C08F2220/382 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/162 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/322 ,  G03F7/325 ,  C08F2220/185 ,  C08F2220/1891

摘要： A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).

公开(公告)号：US20170075224A1

公开(公告)日：2017-03-16

申请号：US15259160

申请日：2016-09-08

申请人： JSR CORPORATION

发明人： Hisashi Nakagawa ,  Takehiko Naruoka ,  Tomoki Nagai

IPC分类号： G03F7/20 ,  G03F7/004 ,  G03F7/11 ,  G03F7/32 ,  C08F220/38 ,  C08F220/18 ,  G03F7/16 ,  G03F7/038 ,  C08F220/28

CPC分类号： G03F7/203 ,  C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  C08F2220/283 ,  C08F2220/382 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/162 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/322 ,  G03F7/325 ,  C08F2220/185 ,  C08F2220/1891

摘要： A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).

公开(公告)号：US20150364332A1

公开(公告)日：2015-12-17

申请号：US14833718

申请日：2015-08-24

申请人： JSR CORPORATION

发明人： Hisashi Nakagawa ,  Tatsuya Sakai ,  Shunsuke Kurita ,  Satoshi Dei ,  Kazunori Takanashi ,  Yoshio Takimoto ,  Masayuki Motonari

IPC分类号： H01L21/308 ,  C07F7/28 ,  C07F9/00 ,  G03F7/11 ,  C07F5/06 ,  G03F7/20 ,  G03F7/32 ,  C07F5/00 ,  C07F11/00

CPC分类号： H01L21/3081 ,  C07F5/00 ,  C07F5/003 ,  C07F5/06 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/36 ,  H01L21/0332

摘要： An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n  (1)

摘要翻译： 一种用于多层抗蚀剂工艺的无机成膜组合物，其包括：金属原子; 至少一个桥连配体; 和除了至少一个桥连配体之外并且衍生自羟基酸酯，二 - 二酮，β-酮酯，二羧酸酯或其组合的配体。 至少一个桥连配体包括衍生自由式（1）表示的化合物的第一桥连配体。 相对于总共的桥连配体，第一桥连配体的量不小于50mol％。 在式（1）中，R 1表示具有n价的有机基团。 X表示-OH，-COOH，-NCO或-NHRa，其中Ra表示氢原子或一价有机基团。 n为2〜4的整数。R1（X）n（1）

公开(公告)号：US20190310552A1

公开(公告)日：2019-10-10

申请号：US16449701

申请日：2019-06-24

申请人： JSR CORPORATION

发明人： Yusuke ASANO ,  Hisashi Nakagawa ,  Shinya Minegishi

IPC分类号： G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/039

摘要： A radiation-sensitive composition is to be used in exposure with an extreme ultraviolet ray or an electron beam, and includes a first polymer and a solvent, wherein the first polymer includes a first structural unit including: at least one metal atom; and at least one carbon atom that each bonds to the metal atom by a chemical bond and does not constitute an unsaturated bond, and at least one chemical bond is a covalent bond. Every chemical bond is preferably a covalent bond. The metal atom is preferably tin, germanium, lead or a combination thereof.

公开(公告)号：US10209619B2

公开(公告)日：2019-02-19

申请号：US15235471

申请日：2016-08-12

申请人： JSR CORPORATION

发明人： Hisashi Nakagawa ,  Ryuichi Saitou ,  Shunsuke Kurita ,  Tatsuya Sakai

IPC分类号： H01L21/311 ,  G03F7/11 ,  G03F7/09 ,  H01L21/033

摘要： A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R′ each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted. R—O—O—R′  (1)

公开(公告)号：US10090163B2

公开(公告)日：2018-10-02

申请号：US14833718

申请日：2015-08-24

申请人： JSR CORPORATION

发明人： Hisashi Nakagawa ,  Tatsuya Sakai ,  Shunsuke Kurita ,  Satoshi Dei ,  Kazunori Takanashi ,  Yoshio Takimoto ,  Masayuki Motonari

IPC分类号： H01L21/308 ,  H01L21/033 ,  G03F7/11 ,  G03F7/09 ,  G03F7/36 ,  G03F7/32 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  C07F13/00 ,  C07F11/00 ,  C07F9/00 ,  C07F7/28 ,  C07F5/06 ,  C07F5/00

摘要： An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n  (1)

公开(公告)号：US20170362412A1

公开(公告)日：2017-12-21

申请号：US15689662

申请日：2017-08-29

申请人： JSR Corporation

发明人： Shunsuke Kurita ,  Hisashi Nakagawa ,  Tatsuya Sakai

IPC分类号： C08K5/56 ,  G03F7/40

CPC分类号： C08K5/56 ,  C08L85/00 ,  C09D5/006 ,  C09D185/00 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11

摘要： A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysus compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom. R1X1)n  (1)

公开(公告)号：US20150284539A1

公开(公告)日：2015-10-08

申请号：US14671255

申请日：2015-03-27

申请人： JSR CORPORATION

发明人： Shunsuke KURITA ,  Hisashi Nakagawa ,  Tatsuya Sakai

IPC分类号： C08K5/56 ,  G03F7/40

CPC分类号： C08K5/56 ,  C08L85/00 ,  C09D5/006 ,  C09D185/00 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11

摘要： A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysis compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom.

摘要翻译： 用于成膜的组合物包括水解化合物和溶剂组合物。 水解化合物是包含可水解基团的金属化合物，金属化合物的水解缩合产物，金属化合物与式（1）表示的化合物的缩合产物或其组合的水解产物。 金属化合物包括来自第3,4,5,6,7,8,9,10,11,12或13族的金属元素或其组合。 溶剂组合物包括醇有机溶剂和不包含醇羟基并且包括含有杂原子的基团的非醇有机溶剂。

公开(公告)号：US09080065B2

公开(公告)日：2015-07-14

申请号：US13781800

申请日：2013-03-01

申请人： JSR CORPORATION

发明人： Hisashi Nakagawa ,  Tatsuya Sakai

IPC分类号： C09D7/00 ,  C04B35/111 ,  C04B35/581 ,  C04B35/622 ,  C23C18/12 ,  C23C18/14 ,  H01L21/02 ,  C09D7/12

CPC分类号： C09D7/63 ,  C04B35/111 ,  C04B35/581 ,  C04B35/62222 ,  C04B2235/48 ,  C09D7/00 ,  C23C18/1204 ,  C23C18/1208 ,  C23C18/1216 ,  C23C18/1233 ,  C23C18/1241 ,  C23C18/1245 ,  C23C18/125 ,  C23C18/1275 ,  C23C18/1279 ,  C23C18/1283 ,  C23C18/14 ,  H01L21/02178 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02628

摘要： A composition for forming an aluminum-containing film includes an organic solvent, and an organic aluminum compound. The organic aluminum compound has a structure represented by a general formula (1). In the general formula (1), each of R1 to R6 is independently a hydrogen atom or a hydrocarbon group, each of R1s, R2s, R3s, R4s, R5s and R6s is identical or different, and optionally each of R1s, R2s, R3s, R4s, R5s or R6s is linked to one another.

摘要翻译： 用于形成含铝膜的组合物包括有机溶剂和有机铝化合物。 有机铝化合物具有由通式（1）表示的结构。 在通式（1）中，R 1至R 6各自独立地为氢原子或烃基，R 1，R 2，R 3，R 4，R 5和R 6各自相同或不同，并且R 1，R 2，R 3 ，R4，R5或R6彼此连接。

公开(公告)号：US11079676B2

公开(公告)日：2021-08-03

申请号：US16449701

申请日：2019-06-24

申请人： JSR CORPORATION

发明人： Yusuke Asano ,  Hisashi Nakagawa ,  Shinya Minegishi

IPC分类号： G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/039 ,  C08G79/12 ,  G03F7/004 ,  C08F12/14

摘要： A radiation-sensitive composition is to be used in exposure with an extreme ultraviolet ray or an electron beam, and includes a first polymer and a solvent, wherein the first polymer includes a first structural unit including: at least one metal atom; and at least one carbon atom that each bonds to the metal atom by a chemical bond and does not constitute an unsaturated bond, and at least one chemical bond is a covalent bond. Every chemical bond is preferably a covalent bond. The metal atom is preferably tin, germanium, lead or a combination thereof.