公开(公告)号：US20240146034A1

公开(公告)日：2024-05-02

申请号：US18409474

申请日：2024-01-10

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Harald Koenig ,  Bernhard Stojetz ,  Muhammad Ali

IPC: H01S5/40 ,  H01S5/0234 ,  H01S5/024 ,  H01S5/042 ,  H01S5/323

CPC classification number: H01S5/4031 ,  H01S5/0234 ,  H01S5/02461 ,  H01S5/02469 ,  H01S5/0421 ,  H01S5/32341 ,  H01S5/04254 ,  H01S5/22

Abstract: In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, and a thermal decoupling structure in a region between two adjacent individual emitters, wherein the decoupling structure includes an electrically conductive cooling element located on the contact side and completely covering a contiguous cooling region of the contact side, wherein the cooling element is completely electrically isolated from the semiconductor layer sequence and thermally coupled to the semiconductor layer sequence along the cooling region, and wherein the cooling region has a width, measured along the lateral transverse direction, which is at least half a width of an adjacent contact region.

公开(公告)号：US11923662B2

公开(公告)日：2024-03-05

申请号：US17807272

申请日：2022-06-16

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Muhammad Ali ,  Bernhard Stojetz ,  Harald Koenig

IPC: H01S5/40 ,  H01S5/0234 ,  H01S5/024 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

CPC classification number: H01S5/4031 ,  H01S5/0234 ,  H01S5/02461 ,  H01S5/02469 ,  H01S5/0421 ,  H01S5/32341 ,  H01S5/04254 ,  H01S5/22

Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

公开(公告)号：US20220311219A1

公开(公告)日：2022-09-29

申请号：US17807272

申请日：2022-06-16

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Muhammad Ali ,  Bernhard Stojetz ,  Harald Koenig

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/042 ,  H01S5/323 ,  H01S5/0234

Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

公开(公告)号：US10727645B2

公开(公告)日：2020-07-28

申请号：US16075853

申请日：2017-03-13

Applicant: OSRAM OLED GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler

IPC: H01S5/06 ,  H01L33/50 ,  F21K9/64 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34 ,  H01L33/18 ,  F21Y115/30

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.

公开(公告)号：US11935755B2

公开(公告)日：2024-03-19

申请号：US17126907

申请日：2020-12-18

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC: H01L21/285 ,  H01L21/268 ,  H01L33/00 ,  H01S5/042

CPC classification number: H01L21/28575 ,  H01L21/268 ,  H01L33/005 ,  H01S5/04252 ,  H01S5/04254 ,  H01L21/28587 ,  H01L2933/0016 ,  H01S5/04256

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

公开(公告)号：US11870214B2

公开(公告)日：2024-01-09

申请号：US17971156

申请日：2022-10-21

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich Sorg ,  Harald König ,  Alfred Lell ,  Florian Peskoller ,  Karsten Auen ,  Roland Schulz ,  Herbert Brunner ,  Frank Singer ,  Roland Hüttinger

IPC: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/0078 ,  H01S5/0087

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

公开(公告)号：US11735887B2

公开(公告)日：2023-08-22

申请号：US16754723

申请日：2018-10-08

Applicant: OSRAM OLED GmbH

Inventor： Jörg Erich Sorg ,  Harald König ,  Alfred Lell ,  Florian Peskoller ,  Karsten Auen ,  Roland Schulz ,  Herbert Brunner ,  Frank Singer ,  Roland Hüttinger

IPC: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0236 ,  H01S5/02253 ,  H01S5/02326 ,  H01S5/0078 ,  H01S5/0087

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 μm. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

公开(公告)号：US11695253B2

公开(公告)日：2023-07-04

申请号：US17720794

申请日：2022-04-14

Applicant: OSRAM OLED GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/22 ,  H01S5/32 ,  H01S5/042 ,  H01S5/323

CPC classification number: H01S5/22 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/16

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

公开(公告)号：US20210367406A1

公开(公告)日：2021-11-25

申请号：US16954961

申请日：2018-12-14

Applicant: OSRAM OLED GmbH

Inventor： Harald König ,  Bernhard Stojetz ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/323 ,  H01S5/024 ,  H01S5/0237 ,  H01S5/40 ,  H01S5/22 ,  B23K26/122

Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

公开(公告)号：US11165223B2

公开(公告)日：2021-11-02

申请号：US16890776

申请日：2020-06-02

Applicant: OSRAM OLED GMBH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Loeffler

IPC: H01S5/06 ,  H01L33/50 ,  H01S5/00 ,  F21K9/64 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34 ,  H01L33/18 ,  F21Y115/30

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.