公开(公告)号：US10553748B2

公开(公告)日：2020-02-04

申请号：US15307815

申请日：2015-05-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Adam Bauer ,  Wolfgang Mönch ,  David Racz ,  Michael Wittmann ,  Dominik Schulten ,  Andreas Löffler

IPC: H01L33/06 ,  H01L33/50 ,  H01L33/62 ,  H01L33/30 ,  H01L33/32 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  G02F1/1335

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

公开(公告)号：US10236426B2

公开(公告)日：2019-03-19

申请号：US15473918

申请日：2017-03-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Wolfgang Mönch ,  Norwin von Malm

IPC: H01L33/50 ,  H01L33/58 ,  H01L27/15

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a carrier, a multi-pixel semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier, and wherein the semiconductor chip has a plurality of individually activatable pixels capable of generating primary radiation and a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation, wherein an active zone of the multi-pixel semiconductor chip extends continuously over the plurality of pixels, and wherein the wavelength conversion element is implemented in one piece.

公开(公告)号：US20170365749A1

公开(公告)日：2017-12-21

申请号：US15543881

申请日：2016-01-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Wolfgang Mönch ,  Britta Göötz ,  Frank Singer ,  Martin Straßburg ,  Tilman Schimpke

IPC: H01L33/50 ,  G02F1/1335 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L33/48

Abstract: An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

公开(公告)号：US09837591B2

公开(公告)日：2017-12-05

申请号：US14888770

申请日：2014-05-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Frank Singer ,  Alexander Linkov ,  Stefan Illek ,  Wolfgang Mönch

IPC: H01L33/60 ,  H01L33/58 ,  H01L33/48 ,  H01L33/62 ,  H01L33/54 ,  H01L33/46 ,  H01L23/00 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/46 ,  H01L33/486 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2224/4554

Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

公开(公告)号：US09461218B2

公开(公告)日：2016-10-04

申请号：US14385116

申请日：2013-02-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Illek ,  Matthias Sabathil ,  Alexander Linkov ,  Thomas Bleicher ,  Norwin von Malm ,  Wolfgang Mönch

IPC: H01L33/58 ,  G02F1/1335 ,  H01L33/44 ,  H01L33/54 ,  H01L25/075 ,  H01L33/50 ,  H01L33/60 ,  H01L33/64 ,  F21Y101/02 ,  F21Y105/00 ,  F21V8/00

CPC classification number: H01L33/58 ,  F21Y2101/00 ,  F21Y2105/00 ,  F21Y2115/10 ,  G02B6/0015 ,  G02B6/0018 ,  G02B6/0025 ,  G02F1/133603 ,  G02F1/133605 ,  G02F1/133606 ,  G02F1/133611 ,  G02F1/133615 ,  G02F2001/133607 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/507 ,  H01L33/54 ,  H01L33/60 ,  H01L33/644 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.

Abstract translation: 在至少一个实施例中，表面光源包括具有用于产生主辐射的辐射主侧的一个或多个光电子半导体芯片。 散射体沿着半导体芯片的主发射方向设置在辐射主侧的下游。 散粒体设计用于散射初级辐射。 散射体的主发射方向相对于半导体芯片的主发射方向倾斜取向。

公开(公告)号：US20160076731A1

公开(公告)日：2016-03-17

申请号：US14784779

申请日：2014-04-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Wolfgang Mönch ,  Stefan Illek ,  Alexander Linkov

IPC: F21V5/00 ,  F21V17/06 ,  G02B3/00

CPC classification number: F21V5/005 ,  F21V5/004 ,  F21V17/06 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  G02B3/0006 ,  G02B3/0056 ,  G02B5/045 ,  G02B19/0014 ,  G02B19/0066 ,  G09F9/33 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optical arrangement includes a multiplicity of light-emitting chips on a carrier. In this case, first light-emitting chips respectively include pixels of a first group and second light-emitting chips respectively comprise pixels of a second group. Respectively one of the first and one of the second light-emitting chips are arranged in first unit cells in a planar fashion on the carrier. Furthermore, an optical element is provided, which is disposed downstream of the light-emitting chips in the emission direction. It is designed to guide light emitted by the pixels of the first and second groups in such a way that light from the pixels of the first group and light from the pixels of the second group are combined in second unit cells in a coupling-out plane, wherein the second unit cells each have an area that is smaller than the area of each of the first unit cells.

Abstract translation: 光学装置包括载体上的多个发光芯片。 在这种情况下，第一发光芯片分别包括第一组的像素，第二发光芯片分别包括第二组的像素。 第一和第二个第二发光芯片中的一个分别以平面方式布置在第一单元电池中。 此外，提供了一种光学元件，其设置在发光方向上的发光芯片的下游。 其被设计成引导由第一组和第二组的像素发射的光，使得来自第一组的像素的光和来自第二组的像素的光在耦合输出平面中的第二单元中组合 其中，所述第二单位电池各自具有小于所述第一单元电池中的每一个的面积的面积。