公开(公告)号：US10969063B2

公开(公告)日：2021-04-06

申请号：US16303887

申请日：2017-05-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schlereth ,  Hagen Luckner

IPC: F21S4/24 ,  F21K9/232 ,  F21K9/238 ,  F21K9/64 ,  F21Y115/10

Abstract: A filament includes a plurality of strings including radiation-emitting semiconductor chips electrically connected in series; and a plurality of contact structures to contact the strings, wherein the contact structures electrically connect to semiconductor chips at ends of the strings such that the strings are electrically drivable via the contact structures, and the filament is configured such that the strings are electrically drivable at least separately from one another via the contact structures.

公开(公告)号：US20200278087A1

公开(公告)日：2020-09-03

申请号：US16303887

申请日：2017-05-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schlereth ,  Hagen Luckner

IPC: F21K9/232 ,  F21K9/238 ,  F21K9/64 ,  F21S4/24

Abstract: A filament includes a plurality of strings including radiation-emitting semiconductor chips electrically connected in series; and a plurality of contact structures to contact the strings, wherein the contact structures electrically connect to semiconductor chips at ends of the strings such that the strings are electrically drivable via the contact structures, and the filament is configured such that the strings are electrically drivable at least separately from one another via the contact structures.

公开(公告)号：US20190086036A1

公开(公告)日：2019-03-21

申请号：US16086824

申请日：2017-03-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Hofmann ,  Thomas Schlereth ,  Michael Bestele

IPC: F21K9/232 ,  F21V29/85 ,  H01L33/44 ,  H01L33/50

CPC classification number: F21K9/232 ,  F21V29/85 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/44 ,  H01L33/501 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L2933/0041

Abstract: A filament includes a radiation-transmissive substrate, a plurality of light emitting diodes and a converter layer, wherein the substrate has an upper side and a lower side facing away from the upper side, and the LEDs are arranged on the upper side of the substrate, the converter layer covers the LEDs, the upper side and the lower side of the substrate, and the converter layer has a first sublayer on the upper side and a second sublayer on the lower side, and the converter layer is configured to obtain an improved radiation profile of the filament such that the converter layer has a varying vertical layer thickness along a lateral direction, and/or the first sublayer and the second sublayer differ from one another in their geometry and/or material composition.

公开(公告)号：US09494295B2

公开(公告)日：2016-11-15

申请号：US14430898

申请日：2013-09-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tony Albrecht ,  Thomas Schlereth ,  Roland Schulz ,  Christian Gaertner ,  Albert Schneider ,  Markus Kirsch ,  Michael Bestele ,  Stefan Handl

IPC: F21V7/04 ,  F21K99/00 ,  F21V13/04 ,  F21V7/00 ,  F21V13/10 ,  F21V9/16 ,  F21Y101/00

CPC classification number: F21V7/04 ,  F21K9/60 ,  F21V7/0008 ,  F21V9/30 ,  F21V13/04 ,  F21V13/10 ,  F21Y2101/00 ,  F21Y2103/33 ,  F21Y2115/10

Abstract: A ring light module having a plurality of optoelectronic semiconductor components for producing electromagnetic radiation, a reflector of the ring light module comprising a reflective surface, and a support. The semiconductor components are mounted on the support. In a plan view of a main radiation side of the ring light module, the reflector comprises at most two planes of symmetry. The reflector tapers in the direction towards the main radiation side. At least some of the main emission directions of adjacent optoelectronic semiconductor components are oriented differently from each other, and the main emission directions point towards the reflective surface.

Abstract translation: 一种环形光模块，具有用于产生电磁辐射的多个光电子半导体部件，所述环形光模块的反射器包括反射表面和支撑体。 半导体部件安装在支撑件上。 在环形灯模块的主辐射侧的平面图中，反射器至少包括两个对称平面。 反射体在朝向主辐射侧的方向上逐渐变细。 相邻光电子半导体部件的主要发射方向的至少一些取向彼此不同，并且主发射方向指向反射表面。

公开(公告)号：US20150236206A1

公开(公告)日：2015-08-20

申请号：US14428952

申请日：2013-09-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Gaertner ,  Thomas Schlereth ,  Stephan Kaiser

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/08 ,  H01L33/10

CPC classification number: H01L33/38 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.

Abstract translation: 光电半导体芯片（10）被规定为包括具有至少两个彼此排列的有源区（21,22）的半导体层序列（20），其中有源区域（21,22）各自具有第一半导体区域 3），第二导电类型的第二半导体区域（5）和布置在第一半导体区域（3）和第二半导体区域（5）之间的辐射发射有源层（4）。 光电子半导体芯片（10）包括配置在半导体层序列（20）背离辐射出射表面（13）的一侧的镜层（6）和至少两个电触点（11,12） ），其布置在所述镜层（6）的背离辐射出射表面（13）的一侧。 此外，指定包括光电半导体芯片（10）的光源（30）。

公开(公告)号：US20150200339A1

公开(公告)日：2015-07-16

申请号：US14420310

申请日：2013-07-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ales Markytan ,  Christian Gärtner ,  Hans-Christoph Gallmeier ,  Ion Stoll ,  Herbert Brunner ,  Thomas Schlereth

IPC: H01L33/50

CPC classification number: H01L33/501 ,  H01L33/504 ,  H01L33/505 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract translation: 在至少一个实施例中，半导体部件包括光电子半导体芯片。 此外，半导体部件包括转换介质层，其被安装到半导体芯片的主辐射侧，并被设计用于将初级辐射转换成次级辐射。 转化介质层包括嵌入其中的基质材料和转化介质颗粒。 此外，转换介质层包括转化层。 转化介质颗粒位于至少一个转化层中。 任选存在的单独或与扩散介质颗粒一起的转化介质颗粒占转化层的至少50％的体积比例。 此外，转化介质层包括含有体积比至多2.5％的转化介质颗粒的粘合剂层。

公开(公告)号：US20180097154A1

公开(公告)日：2018-04-05

申请号：US15719649

申请日：2017-09-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jan Marfeld ,  Christian Betthausen ,  Thomas Schlereth ,  Ivar Tangring

IPC: H01L33/50 ,  H01L27/15

CPC classification number: H01L33/505 ,  F21K9/64 ,  F21V3/08 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/504 ,  H01L2933/0041

Abstract: In various embodiments, a light emitting component is provided. The light emitting component includes a plurality of light emitting semiconductor chips. The semiconductor chips are arranged on at least one carrier. The semiconductor chips are electrically contacted. The light emitting component further includes a converter. The converter is configured to convert light in a first wavelength range, said light being emitted by at least one portion of the light emitting semiconductor chips, at least partly into light in a second wavelength range. The converter is formed separately from the at least one carrier.

公开(公告)号：US09741616B2

公开(公告)日：2017-08-22

申请号：US14405393

申请日：2013-05-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schlereth ,  Michael Bestele ,  Christian Gaertner ,  Tobias Gebuhr ,  Hans-Christoph Gallmeier ,  Peter Holzer ,  Karlheinz Arndt ,  Albert Schneider

IPC: G01R31/27 ,  H01L21/78 ,  H01L33/00 ,  H01L33/62 ,  H01L21/50 ,  H01L21/66 ,  G01R31/26 ,  H01L33/48 ,  H01L23/495

CPC classification number: H01L21/78 ,  G01R31/2635 ,  H01L21/50 ,  H01L22/10 ,  H01L23/49541 ,  H01L23/49565 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: In one embodiment, the method is configured for producing optoelectronic semiconductor components (1) and includes the steps of: providing a leadframe assembly (20) with a multiplicity of leadframes (2), each having at least two leadframe parts (21, 22); forming at least a part of the leadframe assembly (20) with a housing material for housing bodies (4); dividing the leadframe assembly (20) between at least one part of the columns (C) and/or the rows (R), wherein the leadframes (2) remain arranged in a matrix-like manner; equipping the leadframes (2) with at least one optoelectronic semiconductor chip (3); testing at least one part of the leadframes (2) equipped with the semiconductor chips (3) and formed with the housing material after the step of dividing; and separating to form the semiconductor components (1) after the step of forming and after the step of testing.

公开(公告)号：US09406847B2

公开(公告)日：2016-08-02

申请号：US14420310

申请日：2013-07-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ales Markytan ,  Christian Gärtner ,  Hans-Christoph Gallmeier ,  Ion Stoll ,  Herbert Brunner ,  Thomas Schlereth

IPC: H01L33/50

CPC classification number: H01L33/501 ,  H01L33/504 ,  H01L33/505 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract translation: 在至少一个实施例中，半导体部件包括光电子半导体芯片。 此外，半导体部件包括转换介质层，其被安装到半导体芯片的主辐射侧，并被设计用于将初级辐射转换成次级辐射。 转化介质层包括嵌入其中的基质材料和转化介质颗粒。 此外，转换介质层包括转化层。 转化介质颗粒位于至少一个转化层中。 任选存在的单独或与扩散介质颗粒一起的转化介质颗粒占转化层的至少50％的体积比例。 此外，转化介质层包括含有体积比至多2.5％的转化介质颗粒的粘合剂层。

公开(公告)号：US09379161B2

公开(公告)日：2016-06-28

申请号：US14767245

申请日：2014-02-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schlereth ,  Markus Kirsch ,  Christian Gaertner ,  Tony Albrecht

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/14 ,  H01L33/62 ,  H01L33/48 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L27/156 ,  H01L33/14 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor chip (10) is provided which comprises: a semiconductor layer sequence (20) with a p-type semiconductor region (5) and an n-type semiconductor region (3), a plurality of p-contacts (11a, 11b), which are connected electrically conductively with the p-type semiconductor region (5), and a plurality of n-contacts (12a, 12b), which are connected electrically conductively with the n-type semiconductor region (3), wherein: the p-contacts (11a, 11b) and the n-contacts (12a, 12b) are arranged on a rear side of the semiconductor chip (10), the semiconductor chip (10) comprises a plurality of regions (21, 22) arranged adjacent one another, and the regions (21, 22) each comprise one of the p-contacts (11a, 11b) and one of the n-contacts (12a, 12b).

Abstract translation: 提供一种半导体芯片（10），其包括：具有p型半导体区域（5）和n型半导体区域（3）的半导体层序列（20），多个p型触点（11a，11b） ，其与p型半导体区域（5）电连接，以及与n型半导体区域（3）导电连接的多个n型触点（12a，12b），其中：p 所述半导体芯片（10）包括与所述半导体芯片（10）相邻的多个区域（21,22），所述半导体芯片（10）具有与所述半导体芯片（10）相邻的多个区域（21,22） 另一个，并且区域（21,22）各自包括p触点（11a，11b）中的一个和n触点（12a，12b）中的一个。