Abstract:
An integrated device package that includes a die, a substrate, a fill and a conductive interconnect. The die includes a pillar, where the pillar has a first pillar width. The substrate (e.g., package substrate, interposer) includes a dielectric layer and a substrate interconnect (e.g., surface interconnect, embedded interconnect). The fill is located between the die and the substrate. The conductive interconnect is located within the fill. The conductive interconnect includes a first interconnect width that is about the same or less than the first pillar width. The conductive interconnect is coupled to the pillar and the substrate interconnect. The fill is a non-conductive photosensitive material. The fill is a photosensitive film. The substrate interconnect includes a second interconnect width that is equal or greater than the first pillar width. The conductive interconnect includes one of at least a paste, a solder and/or an enhanced solder comprising a polymeric material.
Abstract:
A backside mold configuration (BSMC) process for manufacturing packaged integrated circuits includes applying a mold compound to a side of a packaging substrate opposite an attached die. The mold compound is deposited on a dielectric (such as photo resist). The mold compound and dielectric are patterned after coupling a die to the packaging substrate to expose a contact pad of the packaging substrate. After patterning the mold compound and dielectric, a packaging connection is coupled to contact pads through the mold compound and dielectric. The mold compound surrounding the packaging connection reduces warpage of the packaging substrate during processing. Additionally, patterning the dielectric after attaching the die improves reliability of the packaging connection.
Abstract:
Some novel features pertain to an integrated device that includes a substrate, a first via, and a first bump pad. The first via traverses the substrate. The first via has a first via dimension. The first bump pad is on a surface of the substrate. The first bump pad is coupled to the first via. The first bump pad has a first pad dimension that is equal or less then the first via dimension. In some implementations, the integrated device includes a second via and a second bump pad. The second via traverses the substrate. The second via has a second via dimension. The second bump pad is on the surface of the substrate. The second bump pad is coupled to the second via. The second bump pad has a second pad dimension that is equal or less then the second via dimension.
Abstract:
To achieve a package-on-package having an advantageously reduced height, a first package substrate has a window sized to receive a second package die. The first package substrate interconnects to the second package substrate through a plurality of package-to-package interconnects such that the first and second substrates are separated by a gap. The second package die has a thickness greater than the gap such that the second package die is at least partially disposed within the first package substrate's window.