Abstract:
Some features pertain to a package that includes a redistribution portion, a first die coupled to the redistribution portion, a core layer coupled to the redistribution portion, and an encapsulation layer encapsulating the first die and the core layer. The redistribution portion includes a first dielectric layer. The core layer has a higher Young's Modulus than the encapsulation layer. In some implementations, the core layer includes a glass fiber (e.g., core layer is a glass reinforced dielectric layer). In some implementations, the core layer has a Young's Modulus of about at least 15 gigapascals (Gpa). In some implementations, the first die includes a front side and a back side, where the front side of the first die is coupled to the redistribution portion. In some implementations, the first dielectric layer is a photo imageable dielectric (PID) layer.
Abstract:
Some features pertain to a package that includes a redistribution portion, a first die coupled to the redistribution portion, a core layer coupled to the redistribution portion, and an encapsulation layer encapsulating the first die and the core layer. The redistribution portion includes a first dielectric layer. The core layer has a higher Young's Modulus than the encapsulation layer. In some implementations, the core layer includes a glass fiber (e.g., core layer is a glass reinforced dielectric layer). In some implementations, the core layer has a Young's Modulus of about at least 15 gigapascals (Gpa). In some implementations, the first die includes a front side and a back side, where the front side of the first die is coupled to the redistribution portion. In some implementations, the first dielectric layer is a photo imageable dielectric (PID) layer.
Abstract:
An integrated device package that includes a die, a substrate, a fill and a conductive interconnect. The die includes a pillar, where the pillar has a first pillar width. The substrate (e.g., package substrate, interposer) includes a dielectric layer and a substrate interconnect (e.g., surface interconnect, embedded interconnect). The fill is located between the die and the substrate. The conductive interconnect is located within the fill. The conductive interconnect includes a first interconnect width that is about the same or less than the first pillar width. The conductive interconnect is coupled to the pillar and the substrate interconnect. The fill is a non-conductive photosensitive material. The fill is a photosensitive film. The substrate interconnect includes a second interconnect width that is equal or greater than the first pillar width. The conductive interconnect includes one of at least a paste, a solder and/or an enhanced solder comprising a polymeric material.
Abstract:
Some features pertain to an integrated circuit device that includes a first package substrate, a first die coupled to the first package substrate, a second package substrate, and a solder joint structure coupled to the first package substrate and the second package substrate. The solder joint structure includes a solder comprising a first melting point temperature, and a conductive material comprising a second melting point temperature that is less than the first melting point temperature. In some implementations, the conductive material is one of at least a homogeneous material and/or a heterogeneous material. In some implementations, the conductive material includes a first electrically conductive material and a second material. The conductive material is an electrically conductive material.
Abstract:
An integrated device package that includes a die, a substrate, a fill and a conductive interconnect. The die includes a pillar, where the pillar has a first pillar width. The substrate (e.g., package substrate, interposer) includes a dielectric layer and a substrate interconnect (e.g., surface interconnect, embedded interconnect). The fill is located between the die and the substrate. The conductive interconnect is located within the fill. The conductive interconnect includes a first interconnect width that is about the same or less than the first pillar width. The conductive interconnect is coupled to the pillar and the substrate interconnect. The fill is a non-conductive photosensitive material. The fill is a photosensitive film. The substrate interconnect includes a second interconnect width that is equal or greater than the first pillar width. The conductive interconnect includes one of at least a paste, a solder and/or an enhanced solder comprising a polymeric material.