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    LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF
    12.
    发明申请
    LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF 有权
    发光二极管及其制造方法

    公开(公告)号：US20110133238A1

    公开(公告)日：2011-06-09

    申请号：US13028370

    申请日：2011-02-16

    申请人： Wataru NABEKURA ,  Ryouichi Takeuchi

    发明人： Wataru NABEKURA ,  Ryouichi Takeuchi

    IPC分类号： H01L33/30 ,  H01L33/26 ,  H01L33/22

    CPC分类号： H01L33/20 ,  H01L33/38 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

    摘要翻译： 透明基板发光二极管（10）具有由化合物半导体构成的发光层（133），其中，在其上形成有第一电极（15）的光取出面的面积（A）和第二电极 与第一电极（15）极性不同的电极（16），形成为近光取出面的发光层（133）的面积（B）和背面的面积（C） 落在与用于形成第一电极（15）和第二电极（16）的相反侧的发光二极管相关，以满足A> C> B的关系。 本发明的发光二极管（10）由于发光层（133）的面积与透明基板的背面（23）的面积的关系以及形状的优化 透明基板（14）的侧面呈现出高亮度和高散热性能，并且与高电流配合使用。

    COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF
    15.
    发明申请
    COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF 有权
    化合物半导体发光二极管及其制造方法

    公开(公告)号：US20090121242A1

    公开(公告)日：2009-05-14

    申请号：US11994710

    申请日：2006-07-05

    申请人： Takashi Watanabe ,  Ryouichi Takeuchi

    发明人： Takashi Watanabe ,  Ryouichi Takeuchi

    IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L21/02

    CPC分类号： H01L33/0079 ,  H01L33/30 ,  H01L33/387 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A compound semiconductor light-emitting diode includes a light-emitting layer formed of aluminum-gallium-indium phosphide, a light-emitting part 13 having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer 14 bonded to one of the outermost surface layers 135 of the light-emitting part 13 and transparent to the light emitted from the light-emitting layer 133, and a bonding layer 141 formed between the supporting layer 14 and the one of the outermost surface layers 135 of the light-emitting part 13 containing oxygen atoms at a concentration of 1×1020 cm−3 or less. The compound semiconductor light-emitting diode can avoid exertion of stress on the light-emitting part, suppress the occurrence of a crystal defect, enhance the bonding strength between the light-emitting part and the supporting layer, further decrease electric resistance in the bonding interface and thereby enhance the forward voltage (Vf), also heighten the reverse voltage and materialize impartation of high luminance.

    摘要翻译： 化合物半导体发光二极管包括由铝 - 镓铟磷化物形成的发光层，具有分别由III-V族化合物半导体形成的组分层的发光部分13，与一个 的发光部13的最外表面层135，并且对从发光层133发射的光透明，并且在支撑层14和光的最外表面层135中的一个之间形成接合层141 - 含有浓度为1×10 20 cm -3以下的氧原子的部分13。 化合物半导体发光二极管可以避免在发光部分上产生应力，抑制晶体缺陷的发生，增强发光部分和支撑层之间的接合强度，进一步降低接合界面中的电阻 从而提高正向电压（Vf），也提高了反向电压并实现了高亮度的赋予。

    Light-emitting diode device and production method thereof
    16.
    发明授权
    Light-emitting diode device and production method thereof 失效
    发光二极管装置及其制造方法

    公开(公告)号：US07528417B2

    公开(公告)日：2009-05-05

    申请号：US10544940

    申请日：2004-02-09

    申请人： Ryouichi Takeuchi ,  Keiichi Matsuzawa ,  Junichi Yamazaki

    发明人： Ryouichi Takeuchi ,  Keiichi Matsuzawa ,  Junichi Yamazaki

    IPC分类号： H01L21/00

    CPC分类号： H01L33/30 ,  H01L33/02 ,  H01L33/14

    摘要： A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-side cladding layer includes an undoped AlInP layer (7) grown to have a thickness of 0.5 μm and an intermediate layer (8) doped to assume p-type conductivity and having an intermediate energy band gap value between that of the undoped AlInP layer and that of the window layer. The window layer on the intermediate layer is a GaP layer grown at 730° C. or higher and at a growth rate of 7.8 μm/hour or more in the presence of Ze serving as a dopant. The negative-electrode-side cladding layer is provided with an undoped AlInP layer (5) having a thickness of 0.1 μm or more. With this configuration, there is provided a light-emitting diode device that enhances the crystallinity of a window layer, prevents generation of faults caused by a high-temperature process and attains high luminance at a wavelength falling within a yellow-green band.

    摘要翻译： 双异质结构发光二极管装置包括有源层（6），正电极侧覆层，负电极侧覆层（4），窗口层（9）和未掺杂的AlInP层。 正电极侧包覆层包括生长为厚度为0.5μm的未掺杂的AlInP层（7）和被掺杂为具有p型导电性的中间层（8），并且具有中间能带隙值 未掺杂的AlInP层和窗口层的。 中间层上的窗口层是在作为掺杂剂的Ze的存在下，在730℃以上，生长速度为7.8μm/小时以上的GaP层。 负极侧包层设置有厚度为0.1μm以上的未掺杂的AlInP层（5）。 采用这种结构，提供了一种提高窗口层的结晶度的发光二极管装置，防止由高温处理引起的故障的产生，并且在落在黄绿色带中的波长下获得高亮度。

    Light-emitting diode and method for production thereof
    17.
    发明申请
    Light-emitting diode and method for production thereof 审中-公开
    发光二极管及其制造方法

    公开(公告)号：US20060237741A1

    公开(公告)日：2006-10-26

    申请号：US10548534

    申请日：2004-03-09

    申请人： Ryouichi Takeuchi ,  Wataru Nabekura

    发明人： Ryouichi Takeuchi ,  Wataru Nabekura

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/02 ,  H01L33/38

    摘要： An LED (10) includes a compound semiconductor layer (13) that contains a light-emitting part and an alkali glass substrate (150) that contains at least 1 mass % of one element selected from sodium, calcium, barium and potassium and is transparent to light-emitting wavelength of the part. The substrate is fixed or joined in contact with the semiconductor layer. In a method for producing the diode (10), the semiconductor layer (13) is grown on a semiconductor substrate (1) untransparent to the wavelength, the grown semiconductor layer and alkali glass substrate are joined by the anode junction method, the untransparent substrate is removed, a first ohmic electrode (15) having a first polarity is formed on part of a main surface of the semiconductor layer, a second ohmic electrode (16) is formed on the semiconductor layer having a second polarity, and the first ohmic electrode and semiconductor layer are covered with a metal reflecting layer (14).

    摘要翻译： LED（10）包括含有发光部的化合物半导体层（13）和含有至少1质量％的选自钠，钙，钡和钾中的一种元素的透明碱性玻璃基板（150） 到部分的发光波长。 衬底固定或接合与半导体层接触。 在制造二极管（10）的方法中，半导体层（13）生长在与波长不透明的半导体衬底（1）上，生长的半导体层和碱性玻璃衬底通过阳极接合方法接合，不透明衬底 ，在半导体层的主表面的一部分上形成具有第一极性的第一欧姆电极（15），在具有第二极性的半导体层上形成第二欧姆电极（16），并且第一欧姆电极 并且半导体层被金属反射层（14）覆盖。

    Epitaxial wafer for light emitting diode
    19.
    发明授权
    Epitaxial wafer for light emitting diode 有权
    用于发光二极管的外延晶片

    公开(公告)号：US08482027B2

    公开(公告)日：2013-07-09

    申请号：US13255166

    申请日：2010-02-24

    申请人： Noriyoshi Seo ,  Atsushi Matsumura ,  Ryouichi Takeuchi

    发明人： Noriyoshi Seo ,  Atsushi Matsumura ,  Ryouichi Takeuchi

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/12 ,  H01L33/30

    摘要： An epitaxial wafer for a light emitting diode, including a GaAs substrate, a light emitting unit provided on the GaAs substrate, and a strain adjustment layer provided on the light emitting unit, wherein the light emitting unit has a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0≦X≦0.1 and 0.39≦Y≦0.45 respectively), and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constant of the GaAs substrate. The invention provides an epitaxial wafer that enables mass production of a high-output and/or high-efficiency LED having an emission wavelength of not less than 655 nm.

    摘要翻译： 一种用于发光二极管的外延晶片，包括GaAs衬底，设置在GaAs衬底上的发光单元和设置在发光单元上的应变调节层，其中发光单元具有具有组成的应变发光层 （AlXGa1-X）YIn1-YP（其中X和Y分别为满足0 @ X @ 0.1和0.39 @ Y @ 0.45的数值），并且应变调节层对于发射波长透明并且具有晶格常数 小于GaAs衬底的晶格常数。 本发明提供一种外延晶片，其能够批量生产具有不小于655nm的发射波长的高输出和/或高效率LED。