公开(公告)号：US20240234629A1

公开(公告)日：2024-07-11

申请号：US18534264

申请日：2023-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongchul SHIN ,  Joosung KIM ,  Younghwan PARK ,  Junhee CHOI

IPC: H01L33/12 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

Abstract: A nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including Indium (In); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an AlGaN layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.

公开(公告)号：US20240234622A1

公开(公告)日：2024-07-11

申请号：US18230858

申请日：2023-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghwan PARK ,  Joosung KIM ,  Dongchul SHIN

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/0008 ,  H01L33/08 ,  H01L33/325 ,  H01L33/385 ,  H01L33/62

Abstract: The present disclosure provides light emitting devices and display apparatuses including the same. In some embodiments, a light emitting device includes a first light emitting element configured to emit light of a first wavelength, a PN junction layer provided on the first light emitting element, and a second light emitting element provided on the PN junction layer and configured to emit light of a second wavelength different from the first wavelength. The PN junction layer includes a first conductivity type semiconductor layer provided on the first light emitting element and doped with impurities of a first conductivity type, and a second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer and doped with impurities of a second conductivity type electrically opposite to the first conductivity type.

公开(公告)号：US20230335676A1

公开(公告)日：2023-10-19

申请号：US17960531

申请日：2022-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngchul LEEM ,  Joosung KIM ,  Younghwan PARK ,  Dongchul SHIN ,  Jeongyub SEE ,  Junhee CHOI

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/12 ,  H01L33/38 ,  H01L33/44 ,  H01L27/15

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/12 ,  H01L33/38 ,  H01L33/44 ,  H01L27/156

Abstract: A nanorod light-emitting diode includes a first conductivity-type semiconductor layer including a body having a cylindrical shape, and a hexagonal pyramid shape provided on the body, an active layer covering an upper surface of the hexagonal pyramid shape, a second conductivity-type semiconductor layer covering an upper surface of the active layer, an electrode layer covering an upper surface of the second conductivity-type semiconductor layer, and an insulating layer formed to surround a side surface of the body and to expose a lower region of the side surface of the body.

公开(公告)号：US20230170440A1

公开(公告)日：2023-06-01

申请号：US17847806

申请日：2022-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Kiho KONG ,  Junghun PARK ,  Eunsung LEE ,  Nakhyun KIM ,  Joosung KIM ,  Younghwan PARK ,  Dongchul SHIN ,  Joohun HAN

IPC: H01L33/38 ,  H01L33/50 ,  G06T19/00 ,  H01L33/62 ,  H01L33/00

CPC classification number: H01L33/382 ,  H01L33/502 ,  G06T19/006 ,  H01L33/62 ,  H01L33/005 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/0066

Abstract: Provided is a display apparatus including a first semiconductor layer having a first surface and a second surface opposite to each other, a plurality of partitions protruding from the first surface, and a plurality of opening areas between the plurality of partitions, a plurality of active layers provided opposite to the plurality of opening areas on the second surface of the first semiconductor layer, a plurality of second semiconductor layers respectively provided on the plurality of active layers opposite to the first semiconductor layer, a separation film provided between two adjacent active layers among the plurality of active layers and between two adjacent second semiconductor layers among the plurality of second semiconductor layers, and a plurality of color conversion layers provided in the plurality of opening areas on the first surface of the first semiconductor layer.

公开(公告)号：US20220416120A1

公开(公告)日：2022-12-29

申请号：US17731829

申请日：2022-04-28

Applicant: SAMSUNG ELECTRONICS CO, LTD.

Inventor： Joosung KIM ,  Younghwan PARK ,  Dongchul SHIN ,  Junhee CHOI ,  Nakhyun KIM ,  Junghun PARK ,  Eunsung LEE ,  Joohun HAN

IPC: H01L33/12 ,  H01L25/16 ,  H01L33/00 ,  H01L33/44

Abstract: A light emitting device may be a bar-type light emitting device and include a n-GaN semiconductor layer, a p-GaN semiconductor layer spaced apart from the n-GaN semiconductor layer, an active layer arranged between the n-GaN semiconductor layer and the p-GaN semiconductor layer, and a strain relaxing layer including indium clusters and voids.

公开(公告)号：US20210313465A1

公开(公告)日：2021-10-07

申请号：US17349327

申请日：2021-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injun HWANG ,  Jongseob KIM ,  Joonyong KIM ,  Younghwan PARK ,  Junhyuk PARK ,  Dongchul SHIN ,  Jaejoon OH ,  Soogine CHONG ,  Sunkyu HWANG

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40

Abstract: Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.