-
公开(公告)号：US10141526B2
公开(公告)日：2018-11-27
申请号：US15252295
申请日：2016-08-31
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Tatsuya Sakuishi , Yutaka Uchida , Hiroki Adachi , Saki Eguchi , Junpei Yanaka , Kayo Kumakura , Seiji Yasumoto , Kohei Yokoyama , Akihiro Chida
IPC: H01L51/00 , B32B7/02 , B32B37/02 , B32B37/18 , B32B38/10 , B32B7/12 , B32B15/08 , B32B15/18 , B32B15/20 , B32B17/00 , B32B27/20 , B32B27/28 , B32B27/30 , B32B27/32 , B32B27/34 , B32B27/36 , B32B7/06 , B32B17/06 , B32B37/10 , B32B37/12 , H01L51/52
Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.
-
公开(公告)号：US10079353B2
公开(公告)日：2018-09-18
申请号：US15810249
申请日：2017-11-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Tatsuya Sakuishi , Yutaka Uchida , Hiroki Adachi , Saki Eguchi , Junpei Yanaka , Kayo Kumakura , Seiji Yasumoto , Kohei Yokoyama , Akihiro Chida
CPC classification number: H01L51/0097 , B32B7/02 , B32B7/06 , B32B7/12 , B32B15/08 , B32B15/18 , B32B15/20 , B32B17/00 , B32B17/06 , B32B27/20 , B32B27/286 , B32B27/30 , B32B27/325 , B32B27/34 , B32B27/36 , B32B27/365 , B32B37/02 , B32B37/10 , B32B37/1292 , B32B37/18 , B32B38/10 , B32B2250/05 , B32B2255/20 , B32B2260/021 , B32B2260/046 , B32B2264/102 , B32B2307/202 , B32B2307/40 , B32B2307/50 , B32B2307/536 , B32B2307/558 , B32B2310/0843 , B32B2315/08 , B32B2457/20 , H01L51/003 , H01L51/5253 , H01L2251/5338 , Y02E10/549 , Y02P70/521
Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.
-
公开(公告)号：US09808937B2
公开(公告)日：2017-11-07
申请号：US14699614
申请日：2015-04-29
Applicant: Semiconductor Energy Laboratory Co., LTD.
Inventor： Kayo Kumakura , Satoru Idojiri , Masakatsu Ohno , Koichi Takeshima , Yoshiharu Hirakata , Kohei Yokoyama
CPC classification number: B25J15/0616 , B25J11/00 , B25J15/0004 , B25J15/0028 , B25J15/0061
Abstract: A film suction mechanism is provided which can prevent a film-like member from warping or sagging for reliable suction, handing over, or the like of the film-like member. A film suction mechanism of the present invention is a film suction mechanism for processing or transferring a flexible film-like member. The film suction mechanism includes a suction unit having a function of attaching the film-like member thereto by suction and an air nozzle having a function of blowing pressurized air onto a first surface of the film-like member. The suction unit includes a plurality of suction pads. The suction unit is capable of attaching a second surface of the film-like member thereto by suction while the pressurized air is blown onto the first surface of the film-like member.
-
公开(公告)号：US11232944B2
公开(公告)日：2022-01-25
申请号：US16769433
申请日：2018-12-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masataka Sato , Kayo Kumakura , Seiji Yasumoto , Satoru Idojiri
Abstract: A method of fabricating a semiconductor device, which includes a separation step and has a high yield, is provided. A metal layer is formed over a substrate, fluorine is supplied to the metal layer, and the metal layer is then oxidized, whereby a metal compound layer is formed. A functional layer is formed over the metal compound layer, heat treatment is performed on the metal compound layer, and the functional layer is separated from the substrate with use of the metal compound layer. By performing first plasma treatment using a gas containing fluorine, fluorine can be supplied to the metal layer. By performing second plasma treatment using a gas containing oxygen, the metal layer supplied with fluorine can be oxidized.
-
Patent Agency Ranking
公开(公告)号：US10442172B2
公开(公告)日：2019-10-15
申请号：US15610890
申请日：2017-06-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kayo Kumakura , Tomoya Aoyama , Akihiro Chida , Kohei Yokoyama , Masakatsu Ohno , Satoru Idojiri , Hisao Ikeda , Hiroki Adachi , Yoshiharu Hirakata , Shingo Eguchi , Yasuhiro Jinbo
IPC: B32B43/00 , G02B6/00 , H01L21/67 , B26D1/04 , H01L51/56 , B32B38/10 , B26D1/00 , H01L27/12 , H01L27/32
Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.
-
公开(公告)号：US10096621B2
公开(公告)日：2018-10-09
申请号：US15596412
申请日：2017-05-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junpei Yanaka , Kayo Kumakura , Masataka Sato , Satoru Idojiri , Kensuke Yoshizumi , Mari Tateishi , Natsuko Takase
Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.
-
公开(公告)号：US10040175B2
公开(公告)日：2018-08-07
申请号：US14696515
申请日：2015-04-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kayo Kumakura , Satoru Idojiri , Masakatsu Ohno , Koichi Takeshima , Yoshiharu Hirakata , Kohei Yokoyama
IPC: B25B11/00 , B29C53/18 , H01L21/687 , B29L7/00
Abstract: A film-like member is supported in a flat shape by vacuum suction. A plurality of lift pins are arranged in a planar configuration and bear a film-like member placed on their upper ends. Tubular pads made of rubber for holding the film-like member by vacuum suction are attached to upper portions of the lift pins. The height of the lift pins can be adjusted by a screw fastening mechanism. The deformation of the film-like member can be corrected to a flat or concavely curved shape by suction from the pads. When the correction cannot be achieved by suction alone, the correction may be supplemented by ejection of air from a nozzle.
-
公开(公告)号：US09682544B2
公开(公告)日：2017-06-20
申请号：US15147020
申请日：2016-05-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kayo Kumakura , Tomoya Aoyama , Akihiro Chida , Kohei Yokoyama , Masakatsu Ohno , Satoru Idojiri , Hisao Ikeda , Hiroki Adachi , Yoshiharu Hirakata , Shingo Eguchi , Yasuhiro Jinbo
IPC: B32B38/10 , B32B43/00 , G02B6/00 , H01L21/67 , B26D1/04 , H01L51/56 , B26D1/00 , H01L27/12 , H01L27/32
CPC classification number: B32B43/006 , B26D1/04 , B26D2001/006 , B32B38/10 , B32B2457/00 , G02B6/00 , H01L21/67092 , H01L27/1248 , H01L27/3258 , H01L27/3262 , H01L51/56 , H01L2221/68327 , H01L2227/323 , H01L2251/5338 , Y10T156/1126 , Y10T156/1132 , Y10T156/1168 , Y10T156/1184 , Y10T156/1933 , Y10T156/1944 , Y10T156/1961 , Y10T156/1967
Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.
-
公开(公告)号：US09333736B2
公开(公告)日：2016-05-10
申请号：US14468662
申请日：2014-08-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kayo Kumakura , Tomoya Aoyama , Akihiro Chida , Kohei Yokoyama , Masakatsu Ohno , Satoru Idojiri , Hisao Ikeda , Hiroki Adachi , Yoshiharu Hirakata , Shingo Eguchi , Yasuhiro Jinbo
CPC classification number: B32B43/006 , B26D1/04 , B26D2001/006 , B32B38/10 , B32B2457/00 , G02B6/00 , H01L21/67092 , H01L27/1248 , H01L27/3258 , H01L27/3262 , H01L51/56 , H01L2221/68327 , H01L2227/323 , H01L2251/5338 , Y10T156/1126 , Y10T156/1132 , Y10T156/1168 , Y10T156/1184 , Y10T156/1933 , Y10T156/1944 , Y10T156/1961 , Y10T156/1967
Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.
Abstract translation: 提供堆叠的处理装置。 堆叠包括彼此附接的两个基板，其间隙设置在它们的端部之间。 处理装置包括：固定机构，其固定堆叠的一部分;多个吸附夹具，其固定堆叠体的一个基板的外周边缘;以及楔形夹具，其插入到堆叠的角部。 多个吸附夹具包括允许吸附夹具在垂直方向和水平方向上分开移动的机构。 处理装置还包括传感器，其感测堆叠中的端部之间的间隙的位置。 楔形夹具的尖端沿着形成在堆叠的端表面上的倒角移动。 楔形夹具插入到堆叠中的端部之间的间隙中。
-
-
-
-
-
-
-
-
Search Results
19
records
(took 0.02 seconds)
