公开(公告)号：US20210225887A1

公开(公告)日：2021-07-22

申请号：US17144550

申请日：2021-01-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  H01L29/04 ,  H01L21/66 ,  H01L29/24 ,  G02F1/1368 ,  G01N23/207 ,  H01L29/66 ,  C23C14/08 ,  H01L29/786

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20210151569A1

公开(公告)日：2021-05-20

申请号：US17136230

申请日：2020-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masashi OOTA

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/12 ,  H01L29/267 ,  H01L29/423 ,  H01L29/43 ,  H01L29/66 ,  H01L21/02

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

公开(公告)号：US20170178904A1

公开(公告)日：2017-06-22

申请号：US15451715

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Masashi OOTA ,  Yoichi KUROSAWA ,  Noritaka ISHIHARA

IPC: H01L21/02 ,  C23C14/08 ,  C30B1/04 ,  C30B28/02 ,  C30B29/22 ,  H01L29/04 ,  H01J37/34 ,  C30B29/68 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  C23C14/34 ,  C30B23/08

CPC classification number: H01L21/02631 ,  B82Y30/00 ,  C01G15/006 ,  C01P2002/32 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C30B1/04 ,  C30B23/08 ,  C30B28/02 ,  C30B29/22 ,  C30B29/68 ,  H01J37/3429 ,  H01J2237/081 ,  H01J2237/3322 ,  H01J2237/3323 ,  H01L21/02565 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

公开(公告)号：US20170141233A1

公开(公告)日：2017-05-18

申请号：US15417266

申请日：2017-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US20160343867A1

公开(公告)日：2016-11-24

申请号：US15159873

申请日：2016-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Yasumasa YAMANE ,  Masashi OOTA

IPC: H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L21/84 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78696

Abstract: A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y.

公开(公告)号：US20160284860A1

公开(公告)日：2016-09-29

申请号：US15174197

申请日：2016-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noritaka ISHIHARA ,  Masashi OOTA ,  Masashi TSUBUKU ,  Masami JINTYOU ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

公开(公告)号：US20160155852A1

公开(公告)日：2016-06-02

申请号：US14953632

申请日：2015-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Haruyuki BABA ,  Akio SUZUKI ,  Hiromi SAWAI ,  Masahiko HAYAKAWA ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/203 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.

Abstract translation: 在溅射气体被供应到沉积室之后，在靶附近产生包括溅射气体的离子的等离子体。 溅射气体的离子被加速并与靶碰撞，使得靶板的平板粒子和原子与靶分离。 平板颗粒之间具有间隙而沉积，使得平面面向基板。 从目标分离的原子和原子团聚体进入沉积的平板颗粒之间的间隙，并在基板的平面方向上生长以填充间隙。 在衬底上形成膜。 在沉积之后，在氧气氛中在高温下进行热处理，其形成具有少量氧空位和高结晶度的氧化物。

公开(公告)号：US20150349133A1

公开(公告)日：2015-12-03

申请号：US14813408

申请日：2015-07-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Ryosuke WATANABE ,  Masashi OOTA ,  Noritaka ISHIHARA ,  Koki INOUE

IPC: H01L29/786

CPC classification number: H01L29/1054 ,  H01L22/14 ,  H01L29/247 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.

公开(公告)号：US20140063368A1

公开(公告)日：2014-03-06

申请号：US14010849

申请日：2013-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi OOTA

IPC: G02F1/1333

CPC classification number: C23C14/086 ,  C23C14/34 ,  C23C14/5806 ,  G02F1/13306 ,  G02F1/13338 ,  G02F2201/121 ,  G02F2201/123 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/044 ,  G06F3/045 ,  G06F2203/04103 ,  G06F2203/04104 ,  H01L51/0021 ,  H01L51/5203 ,  H01L51/56 ,  H01L2251/56

Abstract: One embodiment of the present invention provides a conductive oxide film having high conductivity and high transmittance of visible light. The conductive oxide film having high conductivity and high transmittance of visible light can be obtained by forming a conductive oxide film at a high substrate temperature in the film formation and subjecting the conductive oxide film to nitrogen annealing treatment. The conductive oxide film has a crystal structure in which c-axes are aligned in a direction perpendicular to a surface of the film.

Abstract translation: 本发明的一个实施方案提供了具有高导电性和高可见光透射率的导电氧化物膜。 可以通过在成膜中在高的基板温度下形成导电氧化膜并对导电氧化物膜进行氮退火处理来获得具有高导电性和高可见光透射率的导电氧化物膜。 导电氧化物膜具有其中c轴在垂直于膜的表面的方向上排列的晶体结构。

公开(公告)号：US20250040193A1

公开(公告)日：2025-01-30

申请号：US18716572

申请日：2022-11-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hitoshi KUNITAKE ,  Satoru SAITO ,  Masahiro TAKAHASHI ,  Naoki OKUNO ,  Masashi OOTA

IPC: H01L29/786 ,  H01L21/324 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/792 ,  H10B12/00 ,  H10B43/20 ,  H10B80/00

Abstract: A semiconductor device with a high on-state current is provided. A transistor included in the semiconductor device includes a first insulator; a first semiconductor layer over the first insulator; a second semiconductor layer including a channel formation region over the first semiconductor layer; a first conductor and a second conductor over the second semiconductor layer; a second insulator over the second semiconductor layer and between the first conductor and the second conductor; and a third conductor over the second insulator. In a cross-sectional view in a channel width direction of the transistor, the third conductor covers a side surface and a top surface of the second semiconductor layer. The second semiconductor layer has a higher permittivity than the first semiconductor layer. In the cross-sectional view in the channel width direction of the transistor, a length of an interface between the first semiconductor layer and the second semiconductor layer is greater than or equal to 1 nm and less than or equal to 20 nm, and a length from a bottom surface of the second semiconductor layer to a bottom surface of the third conductor in a region not overlapping with the second semiconductor layer is larger than a thickness of the second semiconductor layer.