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    LIGHT EMITTING DEVICE FOR DISPLAY AND UNIT PIXEL HAVING THE SAME
    12.
    发明公开
    LIGHT EMITTING DEVICE FOR DISPLAY AND UNIT PIXEL HAVING THE SAME 审中-公开

    公开(公告)号：US20230299122A1

    公开(公告)日：2023-09-21

    申请号：US18135169

    申请日：2023-04-16

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chae Hon KIM ,  So Ra Lee

    IPC: H01L27/15 ,  H01L33/48 ,  H01L33/30

    CPC classification number: H01L27/156 ,  H01L33/30 ,  H01L33/486

    Abstract: A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.

    MANUFACTURING METHOD OF A SEMICONDUCTOR SUBSTRATE
    13.
    发明申请
    MANUFACTURING METHOD OF A SEMICONDUCTOR SUBSTRATE 有权

    公开(公告)号：US20210043460A1

    公开(公告)日：2021-02-11

    申请号：US17079116

    申请日：2020-10-23

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Hee Sub LEE ,  Chae Hon KIM

    IPC: H01L21/304 ,  H01L21/321 ,  H01L21/02

    Abstract: A manufacturing method of a semiconductor substrate includes forming a sacrificial layer on an upper surface of a base substrate, etching the sacrificial layer to form a plurality of concave portions and a plurality of convex portions, forming a growth suppression layer on the sacrificial layer, removing a portion of the growth suppression layer to expose an upper surface of the convex portion of the sacrificial layer, growing a semiconductor layer on the sacrificial layer, and separating the semiconductor layer from the sacrificial layer. The convex portions as a whole have a honeycomb shape, and the concave portion has a hexagonal shape, when viewed in a plan view.

    LIGHT EMITTING DIODE HAVING SIDE REFLECTION LAYER
    14.
    发明申请
    LIGHT EMITTING DIODE HAVING SIDE REFLECTION LAYER 审中-公开

    公开(公告)号：US20180138368A1

    公开(公告)日：2018-05-17

    申请号：US15811900

    申请日：2017-11-14

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Min JANG ,  Chae Hon KIM ,  Chang Youn KIM ,  Jae Hee LIM

    IPC: H01L33/40 ,  H01L33/46 ,  H01L33/32 ,  H01L33/22 ,  H01L33/00

    Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.

    METHOD OF GROWING GALLIUM NITRIDE BASED SEMICONDUCTOR LAYERS AND METHOD OF FABRICATING LIGHT EMITTING DEVICE THEREWITH
    15.
    发明申请
    METHOD OF GROWING GALLIUM NITRIDE BASED SEMICONDUCTOR LAYERS AND METHOD OF FABRICATING LIGHT EMITTING DEVICE THEREWITH 有权
    生产基于氮化镓的半导体层的方法及其制备发光装置的方法

    公开(公告)号：US20140162437A1

    公开(公告)日：2014-06-12

    申请号：US14056664

    申请日：2013-10-17

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Seung Kyu CHOI ,  Woo Chul KWAK ,  Chae Hon KIM ,  Jung Whan JUNG

    IPC: H01L21/02

    CPC classification number: H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

    Abstract: Exemplary embodiments of the present invention relate to a method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, including disposing a substrate in a chamber, growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure, growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure, and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure.

    Abstract translation: 本发明的示例性实施例涉及通过金属有机化学气相沉积来生长氮化镓基半导体层的方法，包括在衬底中设置衬底，在衬底上生长第一导电型氮化镓基半导体层， 第一室压力，在高于第一室压力的第二室压力下在第一导电型氮化镓基半导体层上生长氮化镓基有源层，以及生长第二导电型氮化镓基半导体层 在低于第二室压力的第三室压力下在有源层上。

    SINGLE CHIP MULTI BAND LED
    20.
    发明公开
    SINGLE CHIP MULTI BAND LED 审中-公开

    公开(公告)号：US20230215977A1

    公开(公告)日：2023-07-06

    申请号：US18097319

    申请日：2023-01-16

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Yong Hyun BAEK ,  Ji Hun KANG ,  Chae Hon KIM ,  Ji Hoon PARK

    IPC: H01L33/24 ,  H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/24 ,  H01L33/32 ,  H01L33/06

    Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

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