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    Large area group III nitride crystals and substrates, methods of making, and methods of use
    11.
    发明授权
    Large area group III nitride crystals and substrates, methods of making, and methods of use 有权

    公开(公告)号：US12091771B2

    公开(公告)日：2024-09-17

    申请号：US17173170

    申请日：2021-02-10

    Applicant: SLT Technologies, Inc

    Inventor： Drew W. Cardwell ,  Mark P. D'Evelyn

    IPC: C30B29/40 ,  C01B21/06 ,  C30B25/04 ,  C30B25/18

    CPC classification number: C30B25/18 ,  C01B21/0632 ,  C30B25/04 ,  C30B29/406

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    Ultrapure mineralizer and improved methods for nitride crystal growth
    12.
    发明授权
    Ultrapure mineralizer and improved methods for nitride crystal growth 有权

    公开(公告)号：US12024795B2

    公开(公告)日：2024-07-02

    申请号：US17514656

    申请日：2021-10-29

    Applicant: SLT Technologies, Inc

    Inventor： Mark P. D'Evelyn ,  Paul M. Von Dollen ,  Lisa M. Gay ,  Douglas W. Pocius ,  Jonathan D. Cook

    IPC: C30B7/10 ,  C30B29/40

    CPC classification number: C30B7/105 ,  C30B29/403

    Abstract: A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel.

    Methods for coupling of optical fibers to a power photodiode
    14.
    发明授权
    Methods for coupling of optical fibers to a power photodiode 有权

    公开(公告)号：US11575055B2

    公开(公告)日：2023-02-07

    申请号：US17151110

    申请日：2021-01-15

    Applicant: SLT Technologies, Inc

    Inventor： Drew W. Cardwell ,  Mark P. D'Evelyn

    IPC: H01L31/0232 ,  H01L31/109 ,  G01J1/44 ,  G01J1/04

    Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE
    15.
    发明申请
    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE 有权

    公开(公告)号：US20210249266A1

    公开(公告)日：2021-08-12

    申请号：US17173169

    申请日：2021-02-10

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'Evelyn ,  Wenkan Jiang ,  Drew W. Cardwell ,  Dirk Ehrentraut

    IPC: H01L21/02 ,  H01L29/36 ,  H01L29/20

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    Method and system for preparing polycrystalline group III metal nitride
    20.
    发明授权
    Method and system for preparing polycrystalline group III metal nitride 有权

    公开(公告)号：US11047041B2

    公开(公告)日：2021-06-29

    申请号：US16814813

    申请日：2020-03-10

    Applicant: SLT Technologies, Inc

    Inventor： Douglas W. Pocius ,  Derrick S. Kamber ,  Mark P. D'Evelyn ,  Jonathan D. Cook

    IPC: C23C16/30 ,  C23C16/44 ,  C30B7/10 ,  C30B29/40 ,  C23C16/01 ,  C01B21/06 ,  C23C16/448

    Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

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