公开(公告)号：US20230317444A1

公开(公告)日：2023-10-05

申请号：US18331719

申请日：2023-06-08

Applicant: SLT Technologies, Inc.

Inventor： Wenkan JIANG ,  Mark P. D'EVELYN ,  Derrick S. KAMBER ,  Dirk EHRENTRAUT ,  Jonathan D. COOK ,  James WENGER

IPC: H01L21/02 ,  C30B7/10 ,  C30B33/10 ,  C30B7/00 ,  C30B29/40

CPC classification number: H01L21/02005 ,  H01L21/02647 ,  H01L21/02642 ,  H01L21/0254 ,  C30B7/105 ,  C30B33/10 ,  C30B7/005 ,  C30B29/406 ,  H01L29/7788

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US20210167232A1

公开(公告)日：2021-06-03

申请号：US17151110

申请日：2021-01-15

Applicant: SLT Technologies, Inc

Inventor： Drew W. CARDWELL ,  Mark P. D'EVELYN

IPC: H01L31/0232 ,  H01L31/109 ,  G01J1/04 ,  G01J1/44

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

公开(公告)号：US20190161858A9

公开(公告)日：2019-05-30

申请号：US16023137

申请日：2018-06-29

Applicant: SLT Technologies, Inc

Inventor： Douglas W. POCIUS ,  Derrick S. KAMBER ,  Mark P. D'EVELYN ,  Jonathan D. COOK

IPC: C23C16/30 ,  C23C16/448 ,  C30B29/40 ,  C30B7/10 ,  C23C16/44 ,  C01B21/06 ,  C23C16/01

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

公开(公告)号：US20250066256A1

公开(公告)日：2025-02-27

申请号：US18947952

申请日：2024-11-14

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'EVELYN ,  David N. ITALIANO

IPC: C04B35/581 ,  B28B1/30 ,  B28B3/02 ,  C04B35/626 ,  C04B35/645 ,  C04B35/65 ,  C09K11/02 ,  C09K11/77

Abstract: Embodiments of disclosure may provide a method for forming an aluminum-containing nitride ceramic matrix composite, comprising heating a green body, an aluminum-containing composition, ammonia and a mineralizer composition in a sealable container to a temperature between about 400 degrees Celsius and about 800 degrees Celsius and a pressure between about 10 MPa and about 1000 MPa, to form an aluminum-containing nitride ceramic matrix composite characterized by a phosphor-to-aluminum nitride (AlN) ratio, by volume, between about 1% and about 99%, by a porosity between about 1% and about 50%, and by a thermal conductivity between about 1 watt per meter-Kelvin and about 320 watts per meter-Kelvin. The green body comprises a phosphor powder comprising at least one phosphor composition, wherein the phosphor powder particles are characterized by a D50 diameter between about 100 nanometers and about 500 micrometers, and the green body has a porosity between about 10% and about 80%. The aluminum-containing composition has a purity, on a metals basis, between about 90% and about 99.9999%. The fraction of free volume within the sealable container contains between about 10% and about 95% of liquid ammonia prior to heating the green body, the aluminum-containing composition, ammonia and the mineralizer composition in the sealable container.

公开(公告)号：US20240026562A1

公开(公告)日：2024-01-25

申请号：US18355676

申请日：2023-07-20

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'EVELYN ,  Paul M. VON DOLLEN

IPC: C30B7/10 ,  C30B35/00

CPC classification number: C30B7/10 ,  C30B35/002

Abstract: Embodiments of the disclosure can include an apparatus for solvothermal crystal growth. The apparatus can include a cylindrical shaped enclosure, a cylindrical heater, a first end closure member, a load-bearing annular insulating member, and a first end plug. The cylindrical heater includes a first end, a second end and a cylindrical wall that extends between the first end and the second end, wherein an interior surface of the cylindrical wall defines a capsule region. The first end closure member is disposed proximate to the first end of the cylindrical heater, the first end closure member being configured to provide axial support for a capsule disposed within the capsule region. The load-bearing annular insulating member is disposed between an inner surface of the cylindrical shaped enclosure and an outer surface of the cylindrical wall of the cylindrical heater. The first end plug is disposed between the first end of the cylindrical heater and the first end closure. The load-bearing annular insulating member or the first end plug comprises a packed-bed ceramic composition, the packed-bed ceramic composition being characterized by a density that is between about 30% and about 98% of a theoretical density of a 100%-dense ceramic having the same composition.

公开(公告)号：US20230420586A1

公开(公告)日：2023-12-28

申请号：US18342617

申请日：2023-06-27

Applicant: SLT Technologies, Inc.

Inventor： Islam SAYED ,  Sang Ho OH ,  Nathan YOUNG ,  Drew W. CARDWELL ,  Mark P. D'EVELYN

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0236 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/035236 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/03048 ,  H01L31/02363 ,  H01L31/109 ,  H01L31/1848

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

公开(公告)号：US20230295839A1

公开(公告)日：2023-09-21

申请号：US18122989

申请日：2023-03-17

Applicant: SLT Technologies, Inc.

Inventor： Keiji FUKUTOMI ,  Wenkan JIANG ,  Motoi TAMAKI ,  Mark P. D'EVELYN

IPC: C30B29/40 ,  H01L33/00 ,  H01L21/02 ,  C30B7/10

CPC classification number: C30B29/406 ,  H01L33/0075 ,  H01L21/02389 ,  C30B7/105 ,  H01L21/02433

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US20230110306A1

公开(公告)日：2023-04-13

申请号：US17963004

申请日：2022-10-10

Applicant: SLT Technologies, Inc. ,  Kyocera Corporation

Inventor： Mark P. D'EVELYN ,  Paul M. VON DOLLEN ,  Rajeev Tirumala PAKALAPATI ,  Keiji FUKUTOMI ,  Maimi MONZEN ,  Koji MIYAMOTO ,  Motoi TAMAKI

IPC: C30B35/00 ,  C30B7/10

Abstract: Embodiments of the disclosure an apparatus for solvothermal crystal growth, comprising: a pressure vessel having a cylindrical shape and a vertical orientation; a cylindrical heater having an upper zone and a lower zone that can be independently controlled; at least one end heater; and an inward-facing surface of a baffle placed within 100 millimeters of a bottom end or top end surface of the growth chamber. The end heater is configured to enable: a variation in the temperature distribution along a first surface to be less than about 10° C., and a variation in the temperature distribution along a second surface to be less than about 20° C., during a crystal growth process. The first surface has a cylindrical shape and is positioned within the pressure vessel, and the second surface comprises an inner diameter of the growth chamber, and the temperature distribution along the second surface is created within an axial distance of at least 100 millimeters of an end of the growth chamber proximate to the first surface.

公开(公告)号：US20210246571A1

公开(公告)日：2021-08-12

申请号：US17173170

申请日：2021-02-10

Applicant: SLT Technologies, Inc

Inventor： Drew W. CARDWELL ,  Mark P. D'EVELYN

IPC: C30B25/18 ,  C30B29/40 ,  C30B25/04

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US20200263321A1

公开(公告)日：2020-08-20

申请号：US16868528

申请日：2020-05-06

Applicant: SLT Technologies, Inc

Inventor： Wenkan JIANG ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN

IPC: C30B29/40 ,  H01L29/30 ,  H01L29/20 ,  C30B7/10 ,  C01B21/06

Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3, an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1, and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.