Abstract:
A semiconductor package includes a lower package including at least one electronic device, and an antenna unit disposed on an upper surface of the lower package, wherein the antenna unit includes: a ground portion disposed on an upper surface of the lower package, a radiating portion disposed to be spaced apart from the ground portion, and a support portion separating the radiating portion and the ground portion, and at least a portion between the radiating portion and the grounding portion is empty space.
Abstract:
A bulk acoustic resonator may include a substrate; a resonating portion including a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate, and partitioned into an active region and a non-active region; and a frame electrode layer including frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region.
Abstract:
There is provided an inkjet print head, including: a first channel to which ink is supplied; a second channel disposed in parallel with the first channel and recovering ink; a pressure chamber disposed between the first channel and the second channel; an ink supply route connecting the first channel to the pressure chamber; and an ink discharge route connecting the pressure chamber to the second channel.
Abstract:
A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.
Abstract:
A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).
Abstract:
An acoustic resonator includes: a central portion; an extension portion extended outwardly of the central portion; a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, in the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion, wherein the piezoelectric layer includes a piezoelectric portion disposed in the central portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline depending on a shape of the insertion layer.
Abstract:
A bulk acoustic wave resonator includes a substrate protective layer disposed on a top surface of a substrate, a cavity defined by a membrane layer and the substrate, and a resonating part disposed on the membrane layer. The membrane layer includes a first layer and a second layer, the second layer having the same material as the first layer and having a density greater than that of the first layer.
Abstract:
An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.
Abstract:
In examples, there is provided a bulk acoustic wave resonator including: a substrate, a first electrode and a second electrode formed on the substrate, and a piezoelectric layer formed between the first electrode and the second electrode, wherein at least one of the first electrode and the second electrode is formed of an alloy including a molybdenum element. Additionally, such a bulk acoustic wave resonator may include an air cavity formed between the substrate and the first electrode.
Abstract:
An acoustic transducer includes a substrate member including a first region having one or more first holes formed therein, and a second region, a vibration member including a third region facing the first region and a fourth region facing the second region and having one or more second holes formed therein, and a support member extended from a boundary region between the first region and the second region to a boundary region between the third region and the fourth region to allow the substrate member and the vibration member to be spaced apart from each other by a predetermined interval.