公开(公告)号：US20230145476A1

公开(公告)日：2023-05-11

申请号：US17833438

申请日：2022-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongha JEONG ,  Kyung-Sun KIM ,  Dongwan KIM ,  Donghyeon NA ,  Dougyong SUNG ,  Myeongsoo SHIN ,  Ungyo JUNG

IPC: H01L21/683 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4585 ,  C23C16/4586

Abstract: A chuck assembly includes a chuck base including a lower base and an upper base that is on the lower base, a ceramic plate on the upper base, an isolator ring enclosing an outer sidewall of the lower base, a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base, and a pad that is between the edge portion of the lower base and the focus ring. The pad may contain a nonmetal conductive material.

公开(公告)号：US20230084124A1

公开(公告)日：2023-03-16

申请号：US17991024

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Byunghun HAN ,  Hyeongmo KANG ,  Donghyeon NA ,  Dougyong SUNG ,  Seungbo SHIM ,  Minjae LEE ,  Myungsun CHOI ,  Minyoung HUR

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H03H7/38

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US20200373126A1

公开(公告)日：2020-11-26

申请号：US16870186

申请日：2020-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyeon NA ,  Hyosin KIM ,  Seungbo SHIM ,  Hadong JIN ,  Dougyong SUNG ,  Minyoung HUR

IPC: H01J37/32

Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.

公开(公告)号：US20200126827A1

公开(公告)日：2020-04-23

申请号：US16703270

申请日：2019-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsung KIM ,  Myoung Soo PARK ,  Dongyun YEO ,  Dougyong SUNG ,  Suho LEE ,  Yun-Kwang JEON

IPC: H01L21/67 ,  H01L21/324 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

Abstract: An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

公开(公告)号：US20190148205A1

公开(公告)日：2019-05-16

申请号：US16248328

申请日：2019-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsung KIM ,  Myoung Soo PARK ,  Dougyong SUNG ,  Yun-Kwang JEON

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: An electrostatic chuck includes a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a lower heater section including lower heaters in the dielectric plate between the chuck electrode and the base, and a lower ground electrode between the lower heaters and the base. The chuck further includes an upper heater section including upper heaters between the lower heaters and the chuck electrode, and a upper ground electrode between the upper heaters and the lower heaters, and a plurality of via contact electrodes connecting the upper ground electrode into the lower ground electrode.

公开(公告)号：US20160379802A1

公开(公告)日：2016-12-29

申请号：US15161432

申请日：2016-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Dougyong SUNG ,  Kiho HWANG ,  Yun-Kwang JEON

IPC: H01J37/32 ,  G01J1/04 ,  G01J1/42 ,  C23C16/50 ,  C23C16/52

CPC classification number: G01J1/0407 ,  C23C16/50 ,  C23C16/52 ,  G01J1/0295 ,  G01J1/0422 ,  G01J1/0492 ,  G01J1/10 ,  G01J1/22 ,  G01J1/26 ,  G01J1/429 ,  G01J2001/242 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/3299

Abstract: An apparatus for monitoring vacuum ultraviolet, the apparatus including a light controller including a slit, the slit to transmit plasma emission light emitted from a process chamber in which a plasma process is performed on a substrate; a light selector adjacent to the light controller, the light selector selectively to transmit light, having a predetermined wavelength band, of the plasma emission light passing through the slit; a light collector to concentrate the light selectively transmitted by the light selector; and a detector to detect the light concentrated by the light collector, the light selectively transmitted by the light selector being vacuum ultraviolet.

Abstract translation: 一种用于监测真空紫外线的装置，该装置包括具有狭缝的光控制器，该狭缝用于传输从其中在基板上执行等离子体处理的处理室发射的等离子体发射光; 与所述光控制器相邻的光选择器，所述光选择器选择性地透射通过所述狭缝的等离子体发射光的具有预定波长带的光; 集光器，用于集中由选择器选择性地传输的光; 以及检测器，用于检测由光收集器集中的光，由选择器选择性地透射的光是真空紫外线。

公开(公告)号：US20160343547A1

公开(公告)日：2016-11-24

申请号：US15148440

申请日：2016-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungkyu LIM ,  Myoung Soo PARK ,  Dougyong SUNG

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/27 ,  C23C16/50 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32642 ,  C23C16/26 ,  C23C16/27 ,  C23C16/4404 ,  C23C16/4581 ,  C23C16/50 ,  H01J37/32477 ,  H01J37/32853 ,  H01L21/6831 ,  H01L21/68757

Abstract: Provided is a substrate processing system including a plasma processing module and a protection layer coated on the plasma processing module. The protection layer may include a diamond film.

Abstract translation: 提供了包括等离子体处理模块和涂覆在等离子体处理模块上的保护层的衬底处理系统。 保护层可以包括金刚石膜。

公开(公告)号：US20250149311A1

公开(公告)日：2025-05-08

申请号：US18762910

申请日：2024-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho IM ,  Younseon WANG ,  Keonwoo KIM ,  Youngjin NOH ,  Dougyong SUNG ,  Wonhee LEE ,  Sungwook JUNG

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/683

Abstract: A substrate processing apparatus may include a chucking member configured to support a substrate, a base plate configured to support the chucking member, a bonding layer located between the chucking member and the base plate, the bonding layer configured to adhere the chucking member to the base plate, a coating layer on an outer side surface of the bonding layer, and a bonding protective member surrounding an outer side surface of the coating layer, wherein the coating layer conformally covers the outer side surface of the bonding layer.

公开(公告)号：US20230317418A1

公开(公告)日：2023-10-05

申请号：US18068778

申请日：2022-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin KO ,  Sangki NAM ,  Dougyong SUNG ,  Byeongsang KIM ,  Yunhwan KIM ,  Suyoung YOO ,  Namkyun KIM ,  Kuihyun YOON

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32568 ,  H01J2237/3343 ,  H01J2237/2001

Abstract: A substrate processing apparatus includes a process chamber having an internal space; upper and lower electrode portions facing each other in the internal space; and a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion. The gas supply unit may include a gas supply source outside the process chamber and configured to provide a cooling gas, and a gas filter connected to the gas supply source and including one or more wall surfaces at least partially defining a gas flow path for the cooling gas. The gas filter may include a first and second regions formed of respective materials having different dielectric constants. The first and second regions may be configured so that the cooling gas flowing along the gas flow path flows upwardly concurrently with colliding with a wall surface of the gas flow path.

公开(公告)号：US20230100582A1

公开(公告)日：2023-03-30

申请号：US17713433

申请日：2022-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunhwan KIM ,  Dougyong SUNG ,  Byeongsang KIM ,  Youngjin NOH ,  Namkyun KIM

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a base plate, an upper plate on the base plate, a DC power supply configured to supply power to the upper plate, and a controller interconnecting the upper plate and the DC power supply. The upper plate includes a first electrode, and a second electrode spaced apart from the first electrode. The controller includes a first controller interconnecting the first electrode and the DC power supply, and a second controller interconnecting the second electrode and the DC power supply. The DC power supply is configured to apply a first voltage to the first electrode via the first controller, and configured to apply a second voltage to the second electrode via the second controller. The first voltage and the second voltage are different.