公开(公告)号：US20210238478A1

公开(公告)日：2021-08-05

申请号：US17032306

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Sung LEE ,  Jung Hun LIM ,  Mihyun PARK ,  Changsu JEON ,  Jung-Min OH ,  Subin OH ,  Hyosan LEE

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/28

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

公开(公告)号：US20170297164A1

公开(公告)日：2017-10-19

申请号：US15407569

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hong KIM ,  Jung-Min OH ,  SeokHoon KIM ,  Chae Lyoung KIM ,  Mihyun PARK ,  Hyosan LEE

IPC: B24B37/20 ,  B08B3/08 ,  B08B3/02 ,  B24B37/005 ,  B05D1/00

CPC classification number: B24B37/20 ,  B05D1/60 ,  B08B3/024 ,  B08B3/08 ,  B24B37/005 ,  C23C16/4407 ,  H01L21/00 ,  H01L21/67

Abstract: Aspects of the inventive concepts provide a cleaning apparatus and a substrate processing system including the same. The cleaning apparatus includes a chuck receiving a substrate, a first nozzle providing first cleaning water or a first organic solvent onto the substrate at a first pressure, and a second nozzle disposed adjacent to the first nozzle. The second nozzle provides a cleaning solution including second cleaning water and a second organic solvent onto the substrate at a second pressure lower than the first pressure.

公开(公告)号：US20170069513A1

公开(公告)日：2017-03-09

申请号：US15168713

申请日：2016-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Min OH ,  Mi-Hyun PARK ,  ln-Gi KIM ,  Ji-Hoon JEONG ,  Seok-Hoon KIM ,  Hyo-San LEE

IPC: H01L21/67 ,  B08B3/08 ,  C11D7/34 ,  C11D11/00 ,  C11D7/32 ,  H01L21/02 ,  B08B3/14

CPC classification number: H01L21/67051 ,  C11D7/265 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/34 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67017

Abstract: A semiconductor cleaning process system includes a process chamber configured to hold a semiconductor substrate, a cleaning solution supply unit configured to provide a cleaning solution to the process chamber, the cleaning solution including an organic fluoride, an organic acid and an organic solvent, a recycling unit configured to collect the cleaning solution discharged from the process chamber, a first concentration measuring unit configured to evaluate a fluorine concentration of a collected solution in the recycling unit, and a sub-cleaning solution supply unit configured to provide the organic fluoride to the cleaning solution supply unit based on the fluorine concentration evaluated by the first concentration measuring unit.

Abstract translation: 半导体清洗处理系统包括：配置成保持半导体衬底的处理室，构造成向处理室提供清洁溶液的清洗溶液供应单元，包括有机氟化物，有机酸和有机溶剂的清洗溶液，循环利用 被配置为收集从处理室排出的清洗溶液的单元，被配置为评估回收单元中的收集溶液的氟浓度的第一浓度测量单元和被配置为将有机氟化物提供给清洁的辅助清洁溶液供应单元 溶液供应单元，其基于由第一浓度测量单元评估的氟浓度。

公开(公告)号：US20170062287A1

公开(公告)日：2017-03-02

申请号：US15175062

申请日：2016-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan KIM ,  Ingi KIM ,  Mihyun PARK ,  Young-Hoo KIM ,  Ui-soon PARK ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Abstract translation: 一种基板处理装置及其处理方法，其特征在于，具备使用化学溶液处理基板的基板处理装置，所述化学溶液含有磷酸水溶液和硅化合物; 以及向所述基板处理单元供给所述化学溶液的化学溶液供给体，所述化学溶液供给体包含测定所述化学溶液浓度的浓度测定器，所述浓度测定器包括测定所述化学溶液的水浓度的第一浓度测定器 ; 以及测量化学溶液的硅浓度的第二浓度测量器。

公开(公告)号：US20150157955A1

公开(公告)日：2015-06-11

申请号：US14537318

申请日：2014-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Jhin CHO ,  Jung-Min OH ,  Yongmyung JUN ,  Yongsun KO ,  Kuntack LEE ,  Hyosan LEE

IPC: B01D3/00

CPC classification number: H01L21/02101 ,  H01L21/02057

Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

Abstract translation: 提供一种净化剂的净化方法。 该方法包括在第一温度或低于第一温度下加热包括蚀刻剂，第一清洁剂和第二清洁剂的第一混合溶液，并蒸馏蚀刻剂和第一清洁剂并除去第二清洁剂。 该方法包括冷凝或压缩蚀刻剂和第一清洗剂，形成包括蚀刻剂和第一清洁剂的第二混合溶液。 该方法包括在低于第二温度的温度下加热第二混合溶液，重新分配蚀刻剂并提取第一清洁剂。 第二个温度低于第一个温度。

公开(公告)号：US20200286727A1

公开(公告)日：2020-09-10

申请号：US16881113

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Hoon JEONG ,  Jung-Min OH ,  Kun-Tack LEE ,  Hyo-San LEE

IPC: H01L21/02 ,  H01L21/67

Abstract: A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

公开(公告)号：US20190019669A1

公开(公告)日：2019-01-17

申请号：US16133789

申请日：2018-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Hoon JEONG ,  Jung-Min OH ,  Kun-Tack LEE ,  Hyo-San LEE

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02041 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67017

Abstract: Disclosed are an apparatus for treating a substrate and a method of treating substrates. The apparatus includes an inlet valve through which a supercritical fluid flows into the process chamber until an inner pressure of the process chamber reaches a first pressure and a turbulent flow generator turbulently supplementing the supercritical fluid into the process chamber until the inner pressure of the process chamber is recovered to the first pressure. A pressure drop module partially removes a supercritical mixture from the process chamber until the inner pressure of the process chamber is dropped to the second pressure. A pressure drop mode and a supplemental mode may be alternately repeated by the flow controller.

公开(公告)号：US20180267409A1

公开(公告)日：2018-09-20

申请号：US15986901

申请日：2018-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min OH ,  Mi-Hyun PARK ,  Hyo-San LEE ,  Ji-Hoon JEONG ,  Yong-Sun KO ,  In-Gi KIM ,  Na-Rim KIM ,  Sang-Tae KIM ,  Seong-Min KIM ,  Kyong-Ho LEE

IPC: G03F7/42 ,  H01L29/16 ,  H01L21/8238 ,  H01L21/311 ,  G03F7/039 ,  H01L21/266

CPC classification number: G03F7/426 ,  G03F7/039 ,  G03F7/42 ,  G03F7/422 ,  G03F7/425 ,  H01L21/266 ,  H01L21/31133 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/16

Abstract: A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.

公开(公告)号：US20150287590A1

公开(公告)日：2015-10-08

申请号：US14669354

申请日：2015-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min OH ,  Yongsun KO ,  Kwangsu KIM ,  SeokHoon KIM ,  ChangSup MUN ,  Kuntack LEE ,  Hyosan LEE ,  Jihoon JEONG ,  Yong-Jhin CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/76224 ,  H01L27/10852 ,  H01L27/11582

Abstract: Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that rinse solution remaining on the pattern is diluted to have a concentration below 2 percent by weight based on a weight of the rinse solution remaining on the pattern and the supercritical carbon dioxide; and venting the supercritical carbon dioxide such that the dry chamber is maintained at atmospheric pressure to dry the substrate where the pattern is formed.

Abstract translation: 提供了一种冲洗和干燥半导体器件的方法，包括在衬底上形成图案; 使用冲洗溶液冲洗形成图案的基底; 将基板装载到干燥室中; 将超临界二氧化碳注射到干燥室中，使得保留在图案上的冲洗溶液基于残留在图案上的冲洗溶液的重量和超临界二氧化碳被稀释至具有低于2重量％的浓度; 并排出超临界二氧化碳，使得干燥室保持在大气压下，以干燥形成图案的基板。

公开(公告)号：US20140373881A1

公开(公告)日：2014-12-25

申请号：US14207903

申请日：2014-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Min OH ,  Kyoungseob KIM ,  Young-Hoo KIM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/68728 ,  H01L21/6875

Abstract: A substrate treating apparatus including a support member configured to support a substrate container configured to surround an upper portion of the support member, a nozzle member including at least one nozzle, which is configured to spray a treating solution onto the substrate disposed on the support member, and a treating solution supply unit connected to the nozzle and configured to supply the treating solution to the nozzle through a main tube may be provided.

Abstract translation: 一种基板处理装置，包括：支撑构件，其构造成支撑构造成围绕支撑构件的上部的基板容器;喷嘴构件，包括至少一个喷嘴，其构造成将处理溶液喷射到设置在支撑构件上的基板上; 并且可以设置连接到喷嘴并且被配置为通过主管将处理溶液供应到喷嘴的处理溶液供应单元。