公开(公告)号：US20140203292A1

公开(公告)日：2014-07-24

申请号：US14158729

申请日：2014-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook HWANG ,  Jung Sub KIM

IPC: H01L33/48 ,  H01L33/50 ,  H01L33/32

CPC classification number: H01L33/50 ,  H01L33/08 ,  H01L33/10 ,  H01L33/12 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L33/507 ,  H01L2224/14 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.

Abstract translation: 半导体发光器件包括透光衬底，设置在透光衬底上的透光缓冲层和发光结构。 透光缓冲层包括具有不同折射率的第一层和第二层，交替设置至少一次。 发光结构包括依次设置在缓冲层上的第一导电型半导体层，有源层和第二导电型半导体层。

公开(公告)号：US20180216787A1

公开(公告)日：2018-08-02

申请号：US15656094

申请日：2017-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Wook CHUNG ,  Kyung Wook HWANG

IPC: F21K9/232 ,  H01L25/075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/60 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L33/64 ,  F21K9/27

CPC classification number: F21K9/232 ,  F21K9/23 ,  F21K9/27 ,  F21V3/02 ,  F21Y2107/00 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/32 ,  H01L33/502 ,  H01L33/505 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/49107 ,  H01L2224/73265

Abstract: An LED device includes a transparent substrate having a bar-like shape and having a first surface and a second surface opposed thereto, a plurality of LED chips mounted on the first surface of the transparent substrate and electrically connected to each other, each of the plurality of LED chips having a reflective layer disposed on a surface mounted in the transparent substrate, a first connection terminal and a second connection terminal disposed on opposing ends of the transparent substrate and electrically connected to the plurality of LED chips, a bonding layer interposed between the plurality of LED chips and the transparent substrate and including a metal filler, and a wavelength conversion portion covering the first surface and the second surface of the transparent substrate and the plurality of LED chips.

公开(公告)号：US20170084783A1

公开(公告)日：2017-03-23

申请号：US15365102

申请日：2016-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook HWANG ,  Joong Kon SON

IPC: H01L33/10 ,  H01L33/42 ,  H01L33/32 ,  H01L33/24 ,  H01L33/00

CPC classification number: H01L33/10 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46

Abstract: A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.

公开(公告)号：US20160056336A1

公开(公告)日：2016-02-25

申请号：US14662149

申请日：2015-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook HWANG ,  Joong Kon SON

IPC: H01L33/24

CPC classification number: H01L33/10 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46

Abstract: A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.

Abstract translation: 一种半导体发光器件，包括衬底，设置在衬底上并包括第一开口的第一反射层，在第一开口上生长并延伸并连接在第一反射层上的第一导电型半导体层，第二反射层 设置在第一导电型半导体层上，并且包括具有设置成与第一开口的上表面间隔开的下表面的第二开口，以及多个发光纳米结构，包括从第二开口延伸并由第一导电性形成的纳米孔 型半导体材料，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层。

公开(公告)号：US20150372195A1

公开(公告)日：2015-12-24

申请号：US14838430

申请日：2015-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook HWANG ,  Han Kyu SEONG ,  Nam Goo CHA

IPC: H01L33/24 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/005 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

Abstract translation: 一种半导体发光器件，包括：衬底; 由第一导电型半导体制成的基底层，设置在基板上; 多个纳米尺度的发光单元，其设置在所述基底层的上表面的区域中，并且包括从所述基底层的上表面突出的第一导电型纳米半导体层，设置在所述第一导电性的纳米活性层 型纳米半导体层和设置在纳米活性层上的第二导电型纳米半导体层; 以及设置在基层的上表面的不同区域并具有层叠有源层的发光层叠体。

公开(公告)号：US20140206116A1

公开(公告)日：2014-07-24

申请号：US14153442

申请日：2014-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Wook HWANG ,  Sam Mook KANG ,  Han Kyu SEONG

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/24

Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.

Abstract translation: 提供了一种半导体发光器件及其制造方法。 一种制造半导体发光器件的多个发光纳米结构的方法，包括：在第一种类的半导体晶种层上形成多个第一导电型半导体芯，每个第一导电型半导体芯通过绝缘膜上的开口形成; 在每个第一导电型半导体芯上形成有源层; 在每个有源层上形成使用掩模图形的第二导电类型半导体层以覆盖有源层，以形成多个发光纳米结构; 以及在所述多个发光纳米结构上形成电极。

公开(公告)号：US20140203293A1

公开(公告)日：2014-07-24

申请号：US14161361

申请日：2014-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook HWANG ,  Jung Sub KIM ,  Jae Hyeok HEO

IPC: H01L33/10 ,  H01L33/32

CPC classification number: H01L33/10 ,  H01L33/007 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

Abstract: A nitride semiconductor light emitting device includes a substrate, a multi-layer structure, a light-transmitting concave-convex structure and a light emitting structure. The multi-layer structure has layers of a first layer and a second layer such that the first and second layers have different refractive indexes and are alternately stacked. The concave-convex structure is disposed in an upper surface of the multi-layer structure and includes a light-transmitting material. The light emitting structure is disposed on the multi-layer structure and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

Abstract translation: 氮化物半导体发光器件包括衬底，多层结构，透光凹凸结构和发光结构。 多层结构具有第一层和第二层的层，使得第一层和第二层具有不同的折射率并交替堆叠。 凹凸结构设置在多层结构的上表面中并且包括透光材料。 发光结构设置在多层结构上，并且包括第一导电半导体层，有源层和第二导电半导体层。