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公开(公告)号：US20170054055A1
公开(公告)日：2017-02-23
申请号：US15147039
申请日：2016-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung Sub KIM , Dong Hyun LEE , Jin Sub LEE , Kyung Wook HWANG , In Su SHIN , Eui Joon YOON , Gun Do LEE , Jeong Hwan JANG
Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≦x+y≦1, 0≦y
Abstract translation: 一种半导体紫外线发射装置，包括：基板; 缓冲层，其设置在所述基板上并且包括多个纳米棒，在所述多个纳米棒之间形成有多个空隙; 第一导电氮化物层，设置在所述缓冲层上并具有第一导电AlGaN层; 设置在第一导电氮化物层上并具有包括Al x In y Ga 1-x-y N（0≤x+y≤1,0≤y<0.15）的量子阱的有源层）。 以及设置在所述有源层上并具有第二导电AlGaN层的第二导电氮化物层，其中所述多个纳米棒满足3.5≤n（λ）×D /λ≤5.0，其中λ表示由所述活性物质产生的光的波长 层，n（λ）表示波长为λ的多个纳米棒的折射率，D表示多个纳米棒的直径。
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公开(公告)号：US20140203240A1
公开(公告)日：2014-07-24
申请号：US14152465
申请日：2014-01-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Han Kyu SEONG , Nam Goo CHA
CPC classification number: H01L33/24 , H01L33/005 , H01L33/08 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.
Abstract translation: 一种半导体发光器件，包括：衬底; 由第一导电型半导体制成的基底层，设置在基板上; 多个纳米尺度的发光单元，其设置在所述基底层的上表面的区域中，并且包括从所述基底层的上表面突出的第一导电型纳米半导体层，设置在所述第一导电性的纳米活性层 型纳米半导体层和设置在纳米活性层上的第二导电型纳米半导体层; 以及设置在基层的上表面的不同区域并具有层叠有源层的发光层叠体。
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公开(公告)号：US20160013366A1
公开(公告)日：2016-01-14
申请号：US14630431
申请日：2015-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Jung Sung KIM , Nam Goo CHA
Abstract: A nanostructure semiconductor light-emitting device includes a base layer formed of a first conductivity-type semiconductor, a first material layer disposed on the base layer and including a plurality of openings, a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore, a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer, a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures, and a contact electrode layer disposed on the second conductivity-type semiconductor extension layer.
Abstract translation: 纳米结构半导体发光器件包括由第一导电型半导体形成的基极层，设置在基底层上并包括多个开口的第一材料层，多个发光纳米结构，每个发光纳米结构延伸穿过每个 并且包括由依次设置在纳米孔上的第一导电型半导体，有源层和第二导电型半导体外壳层形成的纳米孔，设置在第一材料层上的填充层，其中填充物 多个发光纳米结构的多个发光纳米结构体的一部分与多个发光纳米结构体的一部分之间的填充层由填充层露出，第二导电型半导体延伸层设置在填充层上并覆盖 所述多个发光纳米结构中的每一个以及设置在所述第二配线上的接触电极层 导电型半导体延伸层。
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公开(公告)号：US20150280062A1
公开(公告)日：2015-10-01
申请号：US14605551
申请日：2015-01-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geon Wook YOO , Kyung Wook HWANG , Yong Min KIM , Sung Hyun SIM
CPC classification number: H01L33/06 , B82Y20/00 , H01L33/0025 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/24 , H01L33/44 , H01L33/52 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.
Abstract translation: 纳米结构半导体发光器件包括基底层，绝缘层，多个发光纳米结构和接触电极。 基层由第一导电型半导体材料形成。 绝缘层设置在基底层上。 每个发光纳米结构设置在基层中的多个开口的相应开口中，并且包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在第一导电类型半导体材料上的有源层和第二导电类型半导体层 纳米孔的表面。 接触电极与绝缘层隔开并设置在第二导电型半导体层的一部分上。 发光纳米结构的尖端部分具有与发光纳米结构的侧表面不同的晶面。
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公开(公告)号：US20160372636A1
公开(公告)日：2016-12-22
申请号：US15171087
申请日：2016-06-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Si Han KIM , Wan Tae LIM , Eun Joo SHIN
CPC classification number: H01L33/46 , H01L33/22 , H01L33/507 , H01L33/508 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.
Abstract translation: 一种半导体发光器件包括：发光层，包括第一导电型半导体层，第二导电型半导体层和设置在第一导电型半导体层和第二导电类型半导体层之间的有源层 设置在所述发光叠层上并被配置为将从所述有源层发射的具有第一波长的至少一些光转换为具有第二波长的光的波长转换层，以及设置在所述发光层之间的光控制层 并且包括第一绝缘层和第二绝缘层，所述第一绝缘层的折射率低于所述发光叠层的折射率，所述第二绝缘层的折射率高于 第一绝缘层的折射率为0.5以上。
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Patent Agency Ranking
公开(公告)号：US20150129834A1
公开(公告)日：2015-05-14
申请号：US14472089
申请日：2014-08-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Dong Hoon LEE , Min Wook CHOI , Kyung Wook HWANG
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer, a plurality of light emitting nanostructures disposed on the first conductivity-type semiconductor base layer to be spaced apart from one another, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and a filling layer including a refractive portion disposed between the light emitting nanostructures and a cover portion filled between the light emitting nanostructures and enclosing the refractive portion.
Abstract translation: 提供了一种半导体发光器件，其包括第一导电型半导体基底层，设置在第一导电型半导体基底层上彼此间隔开的多个发光纳米结构，每个发光纳米结构包括第一导电性 以及填充层，其包括设置在发光纳米结构之间的折射部分和填充在发光纳米结构之间并包围折射部分的覆盖部分。
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7.发明申请公开(公告)号：US20140264254A1
公开(公告)日：2014-09-18
申请号：US14172552
申请日：2014-02-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Woong KIM , Kyung Wook HWANG
IPC: H01L33/06
CPC classification number: H01L33/24 , H01L33/38 , H01L33/382 , H01L2224/13
Abstract: There is provided a light emitting device including a plurality of nanoscale light emitting structures spaced apart from one another on a first conductivity-type semiconductor base layer, the plurality of nanoscale light emitting structures each including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and an electrode connected to the second conductivity-type semiconductor layer. The electrode is disposed between a first nanoscale light emitting structure and a second nanoscale light emitting structure among the plurality of nanoscale light emitting structures, and the electrode has a height lower than a height of the plurality of nanoscale light emitting structures.
Abstract translation: 提供了一种发光器件，其包括在第一导电型半导体基底层上彼此间隔开的多个纳米级发光结构，所述多个纳米级发光结构各自包括第一导电型半导体芯，有源层 和第二导电型半导体层，以及连接到第二导电型半导体层的电极。 所述电极设置在所述多个纳米级发光结构中的第一纳米级发光结构和第二纳米级发光结构之间，并且所述电极具有低于所述多个纳米级发光结构的高度的高度。
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公开(公告)号：US20130313514A1
公开(公告)日：2013-11-28
申请号：US13842812
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Geon Wook YOO , Nam Goo CHA , Jae Hyeok HEO , Han Kyu SEONG , Hun Jae CHUNG
IPC: H01L33/16
CPC classification number: H01L33/16 , B82Y20/00 , B82Y30/00 , B82Y99/00 , H01L33/08 , H01L33/24 , H01L33/38 , H01L33/405 , Y10S977/762
Abstract: There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer.
Abstract translation: 提供了一种半导体发光器件，包括：衬底和在衬底上彼此间隔开的纳米结构。 纳米结构包括第一导电型半导体层芯，有源层和第二导电型半导体层。 填料填充纳米结构之间的空间并形成为低于多个纳米结构。 形成电极以覆盖纳米结构的上部和纳米结构的侧表面的部分并电连接到第二导电型半导体层。
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公开(公告)号：US20160126412A1
公开(公告)日：2016-05-05
申请号：US14929612
申请日：2015-11-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Wook HWANG
CPC classification number: H01L33/08 , H01L33/18 , H01L33/24 , H01L33/46 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: There is provided a nanostructure semiconductor light emitting device may including: a base layer formed of a first conductivity-type semiconductor, an insulating layer formed on an upper surface of the base layer and including a first region having a plurality of openings and a plurality of second regions positioned in the plurality of openings and spaced apart from the first region, dielectric nanocores disposed in the plurality of second regions, and a plurality of light emitting nanostructures each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the dielectric nanocores.
Abstract translation: 提供了一种纳米结构半导体发光器件，其可以包括：由第一导电型半导体形成的基极层，形成在基底层的上表面上的绝缘层，并且包括具有多个开口的第一区域和多个 位于所述多个开口中并与所述第一区间隔开的第二区域，设置在所述多个第二区域中的电介质纳米孔，以及多个发光纳米结构，每个包含第一导电类型半导体层，有源层和第二区域 依次设置在电介质纳米孔上的导电型半导体层。
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公开(公告)号：US20150041822A1
公开(公告)日：2015-02-12
申请号：US14452309
申请日：2014-08-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Jae Hyeok HEO , Joong Kon SON
CPC classification number: H01L33/10 , H01L33/24 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.
Abstract translation: 半导体发光器件包括衬底，反射层和发光结构。 反射层包括交替地设置在基底上并具有不同孔隙率的至少两个多孔层。 发光结构设置在反射层上，并且包括第一导电型半导体层，有源层和第二导电型半导体层。
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