公开(公告)号：US09595637B2

公开(公告)日：2017-03-14

申请号：US14920509

申请日：2015-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Seong Kum ,  Dae Myung Chun ,  Ji Hye Yeon ,  Han Kyu Seong ,  Jin Sub Lee ,  Young Jin Choi ,  Jae Hyeok Heo

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.

Abstract translation: 提供了一种半导体发光器件，其包括由第一导电型半导体材料形成的基底层和设置在基底层上以彼此间隔开的多个发光纳米结构，并且包括第一导电型 半导体芯，有源层和第二导电型半导体层。 第一导电型半导体芯包括从基层向上延伸的棒层，以及设置在棒层上的封盖层。 在多个发光纳米结构的至少一部分中，棒层的高度不同，并且在多个发光纳米结构的至少一部分中，覆盖层的高度不同。

公开(公告)号：US20150236202A1

公开(公告)日：2015-08-20

申请号：US14516470

申请日：2014-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Myung CHUN ,  Jung Sub KIM ,  Jin Sub LEE ,  Sam Mook KANG ,  Yeon Woo SEO ,  Han Kyu SEONG ,  Young Jin Choi ,  Jae Hyeok HEO

IPC: H01L33/24 ,  H01L33/62 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/145 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.

Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。

公开(公告)号：US20190189876A1

公开(公告)日：2019-06-20

申请号：US15995546

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Gun LEE ,  Yong II Kim ,  Han Kyu Seong ,  Ji Hye Yeon ,  Jin Sub Lee ,  Young Jin Choi

IPC: H01L33/62 ,  H01L33/44 ,  H01L25/075 ,  H01L33/50 ,  H01L33/60

Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.

公开(公告)号：US09941443B2

公开(公告)日：2018-04-10

申请号：US15063150

申请日：2016-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Sub Lee ,  Jung Sub Kim ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Dae Myung Chun ,  Young Jin Choi ,  Jae Hyeok Heo

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/00 ,  H01L33/02 ,  H01L33/42 ,  H01L33/48 ,  H01L33/52

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

公开(公告)号：US09553235B2

公开(公告)日：2017-01-24

申请号：US14627721

申请日：2015-02-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Myung Chun ,  Ji Hye Yeon ,  Jae Hyeok Heo ,  Hyun Seong Kum ,  Han Kyu Seong ,  Young Jin Choi

IPC: H01L21/00 ,  H01L33/24 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.

Abstract translation: 半导体发光器件的制造方法可以包括以下步骤：形成掩模层和模具层，所述模具层具有暴露基底层的部分的多个开口，形成多个第一导电型半导体芯，每个第一导电型半导体芯包括主体部分延伸穿过 从底层开口的每个开口和设置在主体部分上的具有圆锥形状的尖端部分，并且在多个第一导电型半导体芯中的每一个上形成有源层和第二导电类型半导体层。 形成多个第一导电型半导体芯的步骤可以包括形成第一区域，使得尖端部分的顶点位于主体部分的中心垂直轴线上，去除模具层，并形成附加生长区域 在第一区域上使得主体部分具有六棱柱形状。

公开(公告)号：US09312439B2

公开(公告)日：2016-04-12

申请号：US14454536

申请日：2014-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Lee ,  Jung Sub Kim ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Dae Myung Chun ,  Young Jin Choi ,  Jae Hyeok Heo

IPC: H01L33/20 ,  H01L33/30 ,  H01L33/14 ,  H01L33/18 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。