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公开(公告)号：US20150194571A1
公开(公告)日：2015-07-09
申请号：US14454536
申请日：2014-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Jung Sub KIM , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN , Young Jin CHOI , Jae Hyeok HEO
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。
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公开(公告)号：US20180182931A1
公开(公告)日：2018-06-28
申请号：US15684144
申请日：2017-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Gun LEE , Yong Il KIM , Young Soo PARK , Jin Sub LEE , Wan Tae LIM
IPC: H01L33/50 , H01L33/46 , H01L25/075
Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.
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公开(公告)号：US20140042454A1
公开(公告)日：2014-02-13
申请号：US13944669
申请日：2013-07-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Jung Sub KIM , Cheol Soo SONE
IPC: H01L33/32
CPC classification number: H01L33/325 , H01L33/02 , H01L33/12 , H01L33/32
Abstract: A semiconductor light emitting device includes a substrate, a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride, a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride, a capping layer disposed on the composition grading layer, and a cladding layer disposed on the capping layer. A composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner.
Abstract translation: 半导体发光器件包括衬底，设置在衬底上的缓冲层，包括氮化铝的缓冲层，设置在缓冲层上的组合物分级层，包含第一氮化铝和第二氮化铝的组合物分级层，覆盖层 设置在组合物分级层上，以及设置在覆盖层上的包覆层。 第一氮化铝的组成和第二氮化铝的组成以交替的方式逐渐变化。
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公开(公告)号：US20180374738A1
公开(公告)日：2018-12-27
申请号：US15869405
申请日：2018-01-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Han Kyu SEONG , Yong II KIM , Sung Hyun SIM , Dong gun LEE
IPC: H01L21/683 , H01L21/66 , H01L23/00 , H01L21/67 , H01L33/00 , H01L33/62 , H01L25/075
Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.
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公开(公告)号：US20160126419A1
公开(公告)日：2016-05-05
申请号：US14920509
申请日：2015-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Seong KUM , Dae Myung CHUN , Ji Hye YEON , Han Kyu SEONG , Jin Sub LEE , Young Jin CHOI , Jae Hyeok HEO
CPC classification number: H01L33/24 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/42 , H01L33/44 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.
Abstract translation: 提供了一种半导体发光器件，其包括由第一导电型半导体材料形成的基底层和设置在基底层上以彼此间隔开的多个发光纳米结构，并且包括第一导电型 半导体芯，有源层和第二导电型半导体层。 第一导电型半导体芯包括从基层向上延伸的棒层，以及设置在棒层上的封盖层。 在多个发光纳米结构的至少一部分中，棒层的高度不同，并且在多个发光纳米结构的至少一部分中，覆盖层的高度不同。
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Patent Agency Ranking
公开(公告)号：US20150236202A1
公开(公告)日：2015-08-20
申请号：US14516470
申请日：2014-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Myung CHUN , Jung Sub KIM , Jin Sub LEE , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Young Jin Choi , Jae Hyeok HEO
CPC classification number: H01L33/24 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.
Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。
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公开(公告)号：US20190189844A1
公开(公告)日：2019-06-20
申请号：US16011783
申请日：2018-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Gun LEE , Yong Il KIM , Jin Sub LEE
CPC classification number: H01L33/105 , H01L33/06 , H01L33/305 , H01L33/42
Abstract: A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.
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8.发明申请公开(公告)号：US20170236866A1
公开(公告)日：2017-08-17
申请号：US15352933
申请日：2016-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Sub LEE , Han Kyu SEONG , Yong Il KIM , Jung Sub KIM , Seul Gee LEE
CPC classification number: H01L27/156 , H01L25/0753 , H01L25/167 , H01L27/153 , H01L33/0095 , H01L33/44 , H01L33/502 , H01L33/504 , H01L33/505 , H01L2933/0041 , H05B33/0845 , H05B33/086 , H05B37/0272
Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.
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公开(公告)号：US20170040490A1
公开(公告)日：2017-02-09
申请号：US15172976
申请日：2016-06-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Jung Sub KIM
CPC classification number: H01L33/005 , H01L21/02458 , H01L31/0236 , H01L33/04 , H01L33/12 , H01L33/22
Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer.
Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括在衬底上形成下半导体层的第一区域，使用至少一种用于形成第一区域的气体蚀刻第一区域的上表面，原位于其中形成第一区域的工艺 区域，在第一区域上形成下半导体层的第二区域，在下半导体层上形成有源层，在有源层上形成上半导体层。
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公开(公告)号：US20210242374A1
公开(公告)日：2021-08-05
申请号：US17023629
申请日：2020-09-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Ju Yeon JEONG
Abstract: A light-emitting element package is provided. The light-emitting element package includes light-emitting structures spaced from each other, the light-emitting structures including first, second and third light-emitting structures, each of the light-emitting structures being configured to emit light of a first color; a first wavelength conversion layer provided on the first light-emitting structure at a first position corresponding to the first light-emitting structure, the first wavelength conversion layer being configured to convert light of the first color into light of a second color; a first oxide film provided on the first wavelength conversion layer; and a second wavelength conversion layer disposed in the first oxide film at a second position corresponding to the second light-emitting structure, the second wavelength conversion layer being configured to convert light of the first color into light of a third color. The first wavelength conversion layer and the second wavelength conversion layer have different structures.
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