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公开(公告)号:US20220084812A1
公开(公告)日:2022-03-17
申请号:US17318629
申请日:2021-05-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Hyun Park , Seo Hyun Kim , Seung Ho Kim , Young Chan Kim , Young-Hoo Kim , Tae-Hong Kim , Hyun Woo Nho , Seung Min Shin , Kun Tack Lee , Hun Jae Jang
Abstract: A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.
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公开(公告)号:US11087996B2
公开(公告)日:2021-08-10
申请号:US16371461
申请日:2019-04-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seung-Min Shin , Seok-Hoon Kim , Young-Hoo Kim , In-Gi Kim , Tae-Hong Kim , Sung-Hyun Park , Jin-Woo Lee , Ji-Hoon Cha , Yong-Jun Choi
IPC: H01L21/67 , H01L21/02 , H01J37/32 , G02B27/09 , B23K26/352 , B08B7/00 , H01L29/66 , H01L27/11556 , H01L27/11582
Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
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公开(公告)号:US10985036B2
公开(公告)日:2021-04-20
申请号:US15827144
申请日:2017-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Young-Hoo Kim , Sang-Jine Park , Yong-Jhin Cho , Yeon-Jin Gil , Ji-Hoon Jeong , Byung-Kwon Cho , Yong-Sun Ko , Kun-Tack Lee
IPC: H01L21/67 , H01L21/687 , H01L21/02
Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.
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公开(公告)号:US20180366349A1
公开(公告)日:2018-12-20
申请号:US15848481
申请日:2017-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong-Jhin Cho , Young-Hoo Kim , Jihoon Jeong , Yungjun Kim , Jung-Min Oh , Kuntack Lee , Hyosan Lee
Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.
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公开(公告)号:US11189503B2
公开(公告)日:2021-11-30
申请号:US16420776
申请日:2019-05-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Young-Hoo Kim , Kuntack Lee , Yong-Jhin Cho , Chawon Koh , Sunghyun Park , Hyosan Lee , Ji Hoon Cha , Soo Young Choi
Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.
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公开(公告)号:US20210217636A1
公开(公告)日:2021-07-15
申请号:US17217417
申请日:2021-03-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong-Jhin Cho , Young-Hoo Kim , Jihoon Jeong , Yungjun Kim , Jung-Min Oh , Kuntack Lee , Hyosan Lee
Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.
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公开(公告)号:US10186427B2
公开(公告)日:2019-01-22
申请号:US15833184
申请日:2017-12-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyoung Hwan Kim , Ingi Kim , Mihyun Park , Young-Hoo Kim , Ui-soon Park , Jung-Min Oh , Kuntack Lee , Hyosan Lee
IPC: H01L21/311 , H01L21/67
Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.
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公开(公告)号:US12042828B2
公开(公告)日:2024-07-23
申请号:US18299279
申请日:2023-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seung Min Shin , Hun Jae Jang , Seok Hoon Kim , Young-Hoo Kim , In Gi Kim , Tae-Hong Kim , Kun Tack Lee , Ji Hoon Cha , Yong Jun Choi
IPC: B08B7/00 , B08B3/10 , H01L21/311 , H01L21/67 , H01L21/687
CPC classification number: B08B7/0042 , B08B3/10 , B08B7/0064 , H01L21/31111 , H01L21/67051 , H01L21/67075 , H01L21/67098 , H01L21/67248 , H01L21/68764
Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.
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公开(公告)号:US20230249230A1
公开(公告)日:2023-08-10
申请号:US18299279
申请日:2023-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seung Min SHIN , Hun Jae Jang , Seok Hoon Kim , Young-Hoo Kim , In Gi Kim , Tae-Hong Kim , Kun Tack Lee , Ji Hoon Cha , Yong Jun Choi
IPC: B08B7/00 , B08B3/10 , H01L21/67 , H01L21/687 , H01L21/311
CPC classification number: B08B7/0042 , B08B3/10 , B08B7/0064 , H01L21/67051 , H01L21/67075 , H01L21/67248 , H01L21/68764 , H01L21/31111 , H01L21/67098
Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.
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公开(公告)号:US11610788B2
公开(公告)日:2023-03-21
申请号:US17217417
申请日:2021-03-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong-Jhin Cho , Young-Hoo Kim , Jihoon Jeong , Yungjun Kim , Jung-Min Oh , Kuntack Lee , Hyosan Lee
Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.
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