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公开(公告)号:US10559712B2
公开(公告)日:2020-02-11
申请号:US16111848
申请日:2018-08-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Garam Park , Tae Hyung Kim , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Yongwook Kim , Taekhoon Kim , Jihyun Min , Yuho Won
IPC: H01L33/04 , C09K11/61 , H01L33/28 , H01L33/34 , C09K11/02 , C09K11/70 , C09K11/88 , H01L33/24 , H01L33/30 , H01L33/32
Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
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公开(公告)号:US10424695B2
公开(公告)日:2019-09-24
申请号:US15841876
申请日:2017-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yuho Won , Jihyun Min , Eun Joo Jang , Hyo Sook Jang
IPC: H01L33/50 , C09K11/88 , H01L31/0232 , H01L31/0384 , H01L31/105 , H01L21/02 , C09K11/02 , C09K11/70 , H01L33/08 , F21V8/00 , G02F1/1335 , B82Y20/00 , B82Y40/00 , H01L33/06
Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.
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公开(公告)号:US10160649B2
公开(公告)日:2018-12-25
申请号:US14909235
申请日:2014-07-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyo Sook Jang , Shin Ae Jun , Eun Joo Jang
Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.
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公开(公告)号:US09701901B2
公开(公告)日:2017-07-11
申请号:US15184011
申请日:2016-06-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyun A Kang , Eun Joo Jang , Young Hwan Kim , Shin Ae Jun , Hyo Sook Jang
IPC: C09K11/88 , C09K11/70 , H01L33/56 , C08L81/02 , C08G75/045 , H01L33/50 , C09K11/02 , B82Y20/00 , B82Y30/00
CPC classification number: C09K11/883 , B82Y20/00 , B82Y30/00 , C08G75/045 , C08G75/12 , C08L81/02 , C09K11/02 , C09K11/703 , H01L33/501 , H01L33/502 , H01L33/56 , H01L2933/0033 , H01L2933/0041 , H01L2933/005
Abstract: A composition comprising: a first monomer comprising at least three thiol groups, each located at a terminal end of the first monomer, wherein the first monomer is represented by the following Chemical Formula 1-1: a second monomer comprising at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer, wherein the second monomer is represented by the following Chemical Formula 2: wherein in Chemical Formulae 1 and 2 groups R2, Ra to Rd, Ya to Yd, L1′ and L2, X and variables k3 and k4 are the same as described in the specification, and a first light emitting particle, wherein the first light emitting particle consists of a semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, wherein the first light emitting particle has a core/shell structure having a first semiconductor nanocrystal being surrounded by a second semiconductor nanocrystal, and the first semiconductor nanocrystal being different from the second semiconductor nanocrystal.
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公开(公告)号:US09181471B2
公开(公告)日:2015-11-10
申请号:US14059594
申请日:2013-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyun A Kang , Oul Cho , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Soo Kyung Kwon , Won Joo Lee
CPC classification number: C09K11/02 , C09K11/883 , H01L33/501 , H01L33/502 , H01L2224/48091 , Y02B20/181 , H01L2924/00014
Abstract: A light emitting device including: a blue light source; a phosphor; and a semiconductor nanocrystal, and emits white light having a R1-R8 average color rendering index (“CRI”) of greater than or equal to about 90, and a R9 red color rendering index (R9) of greater than or equal to about 90.
Abstract translation: 一种发光器件,包括:蓝色光源; 磷光体 和半导体纳米晶体,并且发射具有大于或等于约90的R1-R8平均显色指数(“CRI”)的白光和大于或等于约90的R9红色显色指数(R9) 。
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公开(公告)号:US11917899B2
公开(公告)日:2024-02-27
申请号:US17193078
申请日:2021-03-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Masashi Tsuji , Takahiro Fujiyama , Yusaku Konishi , Dae Young Chung , Fumiaki Kato , Jaejun Chang , Keigo Furuta , Takao Motoyama , Eun Joo Jang , Hyo Sook Jang , Tae Ho Kim , Tomoyuki Kikuchi , Yuho Won
CPC classification number: H10K85/115 , C08G61/12 , C09K11/06 , H10K85/151 , C08G2261/124 , C08G2261/147 , C08G2261/148 , C08G2261/1412 , C08G2261/18 , C08G2261/228 , C08G2261/312 , C08G2261/3142 , C08G2261/3162 , C08G2261/95 , C09K2211/1416 , C09K2211/1425 , C09K2211/1433 , H10K50/15 , H10K50/17
Abstract: An arylamine-fluorene alternating copolymer having a structural unit (A) is represented by Chemical Formula (1):
wherein Chemical Formula (1) is the same as described in the detailed description.-
公开(公告)号:US11845888B2
公开(公告)日:2023-12-19
申请号:US17989035
申请日:2022-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yuho Won , Nayoun Won , Sungwoo Hwang , Eun Joo Jang , Soo Kyung Kwon , Yong Wook Kim , Jihyun Min , Garam Park , Shang Hyeun Park , Hyo Sook Jang , Shin Ae Jun , Yong Seok Han
IPC: C09K11/08 , C08L57/10 , G02F1/13357 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H05B33/14 , H10K50/115 , H10K59/38 , B82Y40/00 , B82Y20/00 , G02F1/1335
CPC classification number: C09K11/0883 , C08L57/10 , C09K11/025 , C09K11/565 , C09K11/70 , C09K11/883 , G02F1/133617 , H05B33/14 , H10K50/115 , H10K59/38 , B82Y20/00 , B82Y40/00 , C08L2203/20 , G02F1/133614 , G02F2202/022 , G02F2202/102 , G02F2202/36
Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
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公开(公告)号:US11725141B2
公开(公告)日:2023-08-15
申请号:US17166059
申请日:2021-02-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seonmyeong Choi , Eun Joo Jang , Hyo Sook Jang , Kun Su Park
IPC: C09K11/88 , C09K11/70 , C09K11/08 , H01L33/00 , H01L33/26 , H01L33/06 , H01L51/50 , B82Y40/00 , B82Y20/00
CPC classification number: C09K11/883 , C09K11/0883 , C09K11/703 , H01L33/002 , H01L33/06 , H01L33/26 , H01L51/502 , B82Y20/00 , B82Y40/00
Abstract: Quantum dots and electroluminescent device including the same. The quantum dots include an alloy core including a first semiconductor nanocrystal including indium (In), gallium (Ga), and phosphorous (P), and a semiconductor nanocrystal shell disposed on the alloy core, wherein the quantum dots do not include cadmium, wherein the quantum dots are configured to emit blue light having a maximum emission peak wavelength that is greater than or equal to about 440 nanometers (nm) and less than or equal to about 490 nm, wherein in the quantum dots, a mole ratio of gallium with respect to a sum of indium and gallium is greater than or equal to about 0.2:1 and less than or equal to about 0.75:1, and wherein the semiconductor nanocrystal shell includes a zinc chalcogenide.
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公开(公告)号:US11661547B2
公开(公告)日:2023-05-30
申请号:US16883989
申请日:2020-05-26
Inventor: Shin Ae Jun , Taekhoon Kim , Garam Park , Yong Seok Han , Eun Joo Jang , Hyo Sook Jang , Tae Won Jeong , Shang Hyeun Park
IPC: C09K11/62 , C09K11/70 , C09K11/08 , C09K11/88 , C09K11/56 , C09K11/02 , C08K3/32 , C08K3/30 , G02F1/1335 , G02F1/13357 , B82Y40/00 , B82Y20/00 , B82Y30/00
CPC classification number: C09K11/025 , C08K3/30 , C08K3/32 , C09K11/703 , C09K11/883 , G02F1/133516 , G02F1/133617 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C08K2201/001 , G02F2202/36 , Y10S977/774 , Y10S977/896 , Y10S977/95
Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.
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公开(公告)号:US11639469B2
公开(公告)日:2023-05-02
申请号:US16254676
申请日:2019-01-23
Inventor: Jihyun Min , Eun Joo Jang , Hyo Sook Jang , Ankit Jain , Edward Sargent , Oleksandr Voznyy , Larissa Levina , Sjoerd Hoogland , Petar Todorovic , Makhsud Saidaminov
IPC: C09K11/02 , C09K11/88 , C09K11/67 , C01G25/00 , C01G23/00 , C01B19/00 , B82Y40/00 , B82Y20/00 , H01L21/02
Abstract: A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3 Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.
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