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公开(公告)号：US08969939B2
公开(公告)日：2015-03-03
申请号：US13960434
申请日：2013-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC: H01L29/792 , H01L21/8234 , H01L29/78 , H01L27/115 , H01L21/28 , H01L21/762 , H01L29/423 , H01L29/66
CPC classification number: H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
Abstract translation: 半导体器件包括限定形成在半导体衬底中的有源区的隔离层。 在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。 执行第一舍入处理以围绕活动区域的边缘部分。 在隔离层上进行第二凹陷处理。 执行第二舍入处理以围绕活动区域的边缘部分。
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公开(公告)号：US09705584B2
公开(公告)日：2017-07-11
申请号：US14635675
申请日：2015-03-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong-Seok Kim , Jae-Hee Cho , Kwan-Hee Roh , Soon-Young Yoon , June Moon
CPC classification number: H04B7/15 , H04B7/2606 , H04W16/26
Abstract: An apparatus and method for transmitting and receiving data in a communication system are provided. In the method, a BS selects a repeater group from among a plurality of repeater groups, for use in transmitting first data to an MS and transmits the first data to the MS according to the number of repeaters of the selected repeater group. The first data is different from data transmitted by the repeaters of the selected repeater group.
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公开(公告)号：US20160155838A1
公开(公告)日：2016-06-02
申请号：US15006522
申请日：2016-01-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
CPC classification number: H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
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公开(公告)号：US11056645B2
公开(公告)日：2021-07-06
申请号：US16509836
申请日：2019-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Hwan Lee , Yong-Seok Kim , Jun-Hee Lim , Kohji Kanamori
Abstract: A vertical memory device includes gate electrodes on a substrate and a first structure. The gate electrodes may be spaced apart from each other in a first direction perpendicular to an upper surface of the substrate. The first structure extends through the gate electrodes in the first direction, and includes a channel and a variable resistance structure sequentially stacked in a horizontal direction parallel to the upper surface of the substrate. The variable resistance structure may include quantum dots (QDs) therein.
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公开(公告)号：US20190393239A1
公开(公告)日：2019-12-26
申请号：US16263417
申请日：2019-01-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： KYUNG-HWAN LEE , Chang-Seok Kang , Yong-Seok Kim , Jun-Hee Lim , Kohji Kanamori
IPC: H01L27/11582 , H01L27/11565
Abstract: A vertical semiconductor device includes a conductive pattern structure, a memory layer, a pillar structure, and second and third insulation patterns. The conductive pattern structure includes conductive patterns and insulation layers, and may include a first portion extending in a first direction and a second portion protruding from a sidewall of the first portion. The conductive pattern structures are arranged in a second direction perpendicular to the first direction to form a trench therebetween. The memory layer is formed on sidewalls of the conductive pattern structures. The pillar structures in the trench, each including a channel pattern and a first insulation pattern formed on the memory layer, are spaced apart from each other in the first direction. The second insulation pattern is formed between the pillar structures. The third insulation pattern is formed between some pillar structures, and has a shape different from a shape of the second insulation pattern.
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Patent Agency Ranking
公开(公告)号：US10375715B2
公开(公告)日：2019-08-06
申请号：US15903540
申请日：2018-02-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seok-Ki Ahn , Kwang-Taik Kim , Young-Han Kim , Yong-Seok Kim , Chi-Woo Lim
Abstract: A method for performing scheduling by a first base station over a wireless communication network, and an apparatus therfor are provided. The method includes receiving first channel status information (CSI) measured by at least one user equipment (UE) positioned in coverage of the first base station and second CSI, determining a first transmission rate for any one of the at least one UE positioned in the coverage of the first base station and a second transmission rate for any one of the at least one UE positioned in the coverage of the second base station, determining a third transmission rate for a first UE among the at least one UE positioned in the coverage of the first base station and a fourth transmission rate for a second UE among the at least one UE positioned in the coverage of the second base station, and performing scheduling.
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公开(公告)号：US10367002B2
公开(公告)日：2019-07-30
申请号：US15288517
申请日：2016-10-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung-Il Chang , Jun-Hee Lim , Yong-Seok Kim , Tae-Young Kim , Jae-Sung Sim , Su-Jin Ahn , Ji-Yeong Hwang
IPC: H01L27/11582 , H01L27/11578 , H01L29/66 , H01L21/265 , H01L27/11556 , H01L29/78 , H01L27/1157
Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.
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公开(公告)号：US09768850B2
公开(公告)日：2017-09-19
申请号：US14666900
申请日：2015-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong-Seok Kim
CPC classification number: H04B7/0639 , H04B7/0408 , H04B7/0452 , H04B7/061 , H04B7/063 , H04B7/0695 , H04B7/088 , H04B17/336 , H04L1/00 , H04L25/03898 , H04W72/082 , H04W72/12
Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A method and an apparatus for grouping a plurality of beams into a plurality of beam groups in a wireless communication system supporting Multi-Input Multi-Output (MIMO) are provided. The method includes determining at least one preferred beam set, based on a channel between a plurality of transmission beams of a Base Station (BS) and a plurality of reception beams of a Mobile Station (MS), transmitting information on the at least one preferred beam set, to the BS, generating information indicating interference that at least one transmission beam of the BS exerts to the MS, based on a preferred reception beam comprised in the at least one preferred beam set, and transmitting the generated interference information to the BS.
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公开(公告)号：US12042118B2
公开(公告)日：2024-07-23
申请号：US17982027
申请日：2022-11-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woo Jin Na , Hakbong Lee , Bosang Kim , Sin-Ae Kim , Yong-Seok Kim , Yeonkyu Jeong
CPC classification number: A47L9/149 , A47L5/22 , A47L9/106 , A47L9/2815 , A47L9/2836 , A47L9/2873 , A47L9/2884 , A47L2201/022 , A47L2201/024
Abstract: Provided is a cleaning system including: a robot cleaner including a dust collecting device having a dirt outlet and an outlet door configured to open and close the dirt outlet; and a station including a collecting device configured to generate a suction force to suction dirt of the duct collecting device and a lever device provided with a lever configured to be fixable to the outlet door as the outlet door is being opened to allow the collecting device and the dust collecting device to communicate with each other, and a lever driving source configured to generate power for driving the lever.
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公开(公告)号：US10896728B2
公开(公告)日：2021-01-19
申请号：US16243281
申请日：2019-01-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kohji Kanamori , Chang-Seok Kang , Yong-Seok Kim , Kyung-Hwan Lee
Abstract: In a method of writing data in a nonvolatile memory device including a plurality of cell strings, each of the plurality of cell strings includes a plurality of memory cells disposed in a vertical direction. A program target page is divided into a plurality of subpages. The program target page is connected to one of a plurality of wordlines. Each of the plurality of subpages includes memory cells that are physically spaced apart from one another. A program operation is sequentially performed on the plurality of subpages. A program verification operation is performed on the program target page including the plurality of subpages at a time.
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