公开(公告)号：US10566455B2

公开(公告)日：2020-02-18

申请号：US14220681

申请日：2014-03-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Yasutaka Nakazawa ,  Yukinori Shima

IPC: H01L29/786 ,  H01L27/12

Abstract: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.

公开(公告)号：US10381486B2

公开(公告)日：2019-08-13

申请号：US15219396

申请日：2016-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Naoto Goto

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  G06F3/041 ,  H01L27/105 ,  H01L27/146 ,  C23C16/455 ,  H01L29/24 ,  H01L29/66 ,  G06F3/044 ,  C23C14/08 ,  C23C14/34

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a gate electrode over the second insulating film; a metal oxide film in contact with a side surface of the second insulating film; and a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

公开(公告)号：US10372274B2

公开(公告)日：2019-08-06

申请号：US15091295

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/044 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32 ,  G06F3/041 ,  H01L29/66

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US10319861B2

公开(公告)日：2019-06-11

申请号：US15819008

申请日：2017-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/417 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477 ,  H01L21/465 ,  H01L21/4757 ,  H01L29/423 ,  H01L27/32

Abstract: The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

公开(公告)号：US20190051727A1

公开(公告)日：2019-02-14

申请号：US16152850

申请日：2018-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  H01L27/12 ,  C04B35/622 ,  H01L29/786 ,  H01L29/778 ,  C23C14/58 ,  C23C14/08 ,  C04B35/01 ,  C03C17/245 ,  C04B35/453

CPC classification number: H01L29/24 ,  C03C17/245 ,  C03C2217/23 ,  C03C2218/151 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US10032929B2

公开(公告)日：2018-07-24

申请号：US15683845

申请日：2017-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L27/12 ,  H01L29/04

Abstract: The reliability of a transistor including an oxide semiconductor is improved. The transistor in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region overlapping with the second oxide semiconductor film, a source region and a drain region each in contact with the second insulating film. The channel region includes a first layer and a second layer in contact with a top surface of the first layer and covering a side surface of the first layer in the channel width direction. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

公开(公告)号：US10002970B2

公开(公告)日：2018-06-19

申请号：US15137087

申请日：2016-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yoshiaki Oikawa

IPC: H01L29/786 ,  H01L27/12 ,  G06F3/041 ,  G06F3/044 ,  G02F1/1368 ,  H01L29/49 ,  H01L29/423 ,  G02F1/1362

CPC classification number: H01L29/78648 ,  G02F1/13624 ,  G02F1/1368 ,  G06F3/0416 ,  G06F3/044 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/78645 ,  H01L29/78687 ,  H01L29/7869

Abstract: To provide a novel semiconductor device including an oxide semiconductor film. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second transistor includes a third oxide semiconductor film including a channel region, a source region, and a drain region over the second insulating film, a fourth insulating film over the channel region, a third gate electrode over the fourth insulating film, and the third insulating film over the source region and the drain region.

公开(公告)号：US09929279B2

公开(公告)日：2018-03-27

申请号：US14610336

申请日：2015-01-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

公开(公告)号：US09893202B2

公开(公告)日：2018-02-13

申请号：US15231061

申请日：2016-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki ,  Yukinori Shima ,  Toshimitsu Obonai

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02653 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device has a first step including a step of forming an oxide semiconductor film, a second step including a step of forming a gate insulating film over the oxide semiconductor film and a step of forming a gate electrode over the gate insulating film, a third step including a step of forming a nitride insulating film over the oxide semiconductor film and the gate electrode, a fourth step including a step of forming an oxide insulating film over the nitride insulating film, a fifth step including a step of forming an opening in the nitride insulating film and the oxide insulating film, and a sixth step including a step of forming source and drain electrodes over the oxide insulating film so as to cover the opening. In the third step, the nitride insulating film is formed through at least two steps: plasma treatment and deposition treatment. The two steps are each performed at a temperature higher than or equal to 150° C. and lower than 300° C.

公开(公告)号：US09773815B2

公开(公告)日：2017-09-26

申请号：US15477646

申请日：2017-04-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Masataka Nakada

IPC: H01L21/469 ,  H01L29/786 ,  H01L21/34 ,  H01L21/36 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.