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公开(公告)号：US10044027B2
公开(公告)日：2018-08-07
申请号：US14471906
申请日：2014-08-28
发明人： Yasuhiko Takemura , Tamae Moriwaka
摘要： An object is to increase the conductivity of an electrode including active material particles and the like, which is used for a battery. Two-dimensional carbon including 1 to 10 graphenes is used as a conduction auxiliary agent, instead of a conventionally used conduction auxiliary agent extending only one-dimensionally at most, such as graphite particles, acetylene black, or carbon fibers. A conduction auxiliary agent extending two-dimensionally has higher probability of being in contact with active material particles or other conduction auxiliary agents, so that the conductivity can be improved.
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公开(公告)号：US09660298B2
公开(公告)日：2017-05-23
申请号：US14744151
申请日：2015-06-19
发明人： Kazutaka Kuriki , Ryota Tajima , Tamae Moriwaka
IPC分类号： H01M10/0562 , H01M10/0565 , H01M10/0585 , H01G11/46 , H01G11/56 , H01M10/052
CPC分类号： H01L27/13 , H01G11/08 , H01G11/46 , H01G11/56 , H01G11/84 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1259 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01M10/052 , H01M10/0562 , H01M10/0565 , H01M10/0585 , H01M2300/0065 , H01M2300/0071 , H01M2300/0082 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y10T29/49115
摘要： Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
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公开(公告)号：US09653611B2
公开(公告)日：2017-05-16
申请号：US14637542
申请日：2015-03-04
发明人： Tomoaki Atsumi , Shuhei Nagatsuka , Tamae Moriwaka , Yuta Endo
IPC分类号： H01L29/10 , H01L29/786 , H01L27/11551 , H01L27/1156 , H01L27/06 , G11C7/16 , G11C8/14 , G11C11/403 , G11C11/408
CPC分类号： H01L27/115 , G11C7/16 , G11C8/14 , G11C11/24 , G11C11/403 , G11C11/4085 , H01L27/0688 , H01L27/11551 , H01L27/1156 , H01L29/24 , H01L29/7869
摘要： [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≧2, the jth sub memory cell is arranged over the j−1th sub memory cell.
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公开(公告)号：US12101945B2
公开(公告)日：2024-09-24
申请号：US18225186
申请日：2023-07-24
发明人： Tomoaki Atsumi , Shuhei Nagatsuka , Tamae Moriwaka , Yuta Endo
IPC分类号： H10B69/00 , G11C7/16 , G11C8/14 , G11C11/24 , G11C11/403 , G11C11/408 , H01L27/06 , H01L29/24 , H01L29/786 , H10B41/20 , H10B41/70
CPC分类号： H10B69/00 , G11C7/16 , G11C8/14 , G11C11/24 , G11C11/403 , G11C11/4085 , H01L27/0688 , H01L29/24 , H01L29/7869 , H10B41/20 , H10B41/70
摘要： [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.
[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≥2, the jth sub memory cell is arranged over the j−1th sub memory cell.-
公开(公告)号：US11699782B2
公开(公告)日：2023-07-11
申请号：US16904618
申请日：2020-06-18
发明人： Shunpei Yamazaki , Teppei Oguni , Tamae Moriwaka , Junpei Momo , Ryota Tajima , Nobuhiro Inoue
摘要： A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode.
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公开(公告)号：US11587959B2
公开(公告)日：2023-02-21
申请号：US17329266
申请日：2021-05-25
发明人： Kazutaka Kuriki , Ryota Tajima , Tamae Moriwaka
IPC分类号： H01M10/0565 , H01M10/052 , H01M10/0562 , H01M10/0585 , H01L27/13 , H01G11/46 , H01G11/56 , H01G11/08 , H01G11/84 , H01L27/12 , H01L29/24 , H01L29/66 , H01L29/786
摘要： Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
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公开(公告)号：US11101460B2
公开(公告)日：2021-08-24
申请号：US16263134
申请日：2019-01-31
IPC分类号： H01M4/26 , H01M4/36 , H01M4/131 , H01M4/485 , H01M4/58 , H01M4/62 , H01M10/0525 , H01M4/133 , H01M4/136 , H01M4/587 , H01M4/02
摘要： To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector.
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公开(公告)号：US10205160B2
公开(公告)日：2019-02-12
申请号：US14725724
申请日：2015-05-29
IPC分类号： H01M4/36 , H01M4/131 , H01M4/485 , H01M4/58 , H01M4/62 , H01M10/0525 , H01M4/133 , H01M4/136 , H01M4/587 , H01M4/02
摘要： To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector.
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公开(公告)号：US09673454B2
公开(公告)日：2017-06-06
申请号：US14180573
申请日：2014-02-14
发明人： Tamae Moriwaka , Satoshi Seo , Takuya Hirohashi , Kunio Hosoya , Shunsuke Adachi
IPC分类号： H01M4/62 , H01M10/0568 , H01M4/58 , H01M4/136 , H01M10/054 , H01M4/587
CPC分类号： H01M4/625 , H01M4/136 , H01M4/5825 , H01M4/587 , H01M10/054 , H01M10/0568
摘要： With a small amount of a conductive additive, an electrode for a storage battery including an active material layer which is highly filled with an active material is provided. The use of the electrode enables fabrication of a storage battery having high capacity per unit volume of the electrode. By using graphene as a conductive additive in an electrode for a storage battery including a positive electrode active material, a network for electron conduction through graphene is formed. Consequently, the electrode can include an active material layer in which particles of an active material are electrically connected to each other by graphene. Therefore, graphene is used as a conductive additive in an electrode for a sodium-ion secondary battery including an active material with low electric conductivity, for example, an active material with a band gap of 3.0 eV or more.
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公开(公告)号：US09312349B2
公开(公告)日：2016-04-12
申请号：US14322555
申请日：2014-07-02
IPC分类号： H01L21/00 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/4234 , H01L29/4908 , H01L29/7869 , H01L29/78696
摘要： To provide a semiconductor device in which the threshold value is controlled. Furthermore, to provide a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as a transistor is miniaturized can be suppressed. The semiconductor device includes a first semiconductor film, a source electrode and a drain electrode electrically connected to the first semiconductor film, a gate insulating film, and a gate electrode in contact with the gate insulating film. The gate insulating film includes a first insulating film and a trap film, and charge is trapped in a charge trap state in an interface between the first insulating film and the trap film or inside the trap film.
摘要翻译： 提供其中控制阈值的半导体器件。 此外，为了提供一种半导体器件，其中可以抑制作为晶体管变得更显着的电特性的劣化小型化。 半导体器件包括与栅极绝缘膜接触的第一半导体膜，与第一半导体膜电连接的栅极绝缘膜和栅电极的源电极和漏电极。 栅极绝缘膜包括第一绝缘膜和陷阱膜，并且在第一绝缘膜和陷阱膜之间的界面内或捕获膜内部的电荷陷阱状态下捕获电荷。
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