公开(公告)号：US20160190219A1

公开(公告)日：2016-06-30

申请号：US15059623

申请日：2016-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/1266 ,  B32B7/06 ,  B32B43/006 ,  B32B2310/0843 ,  B32B2457/08 ,  B32B2457/14 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/3221 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/78663 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/529 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  Y10S438/977 ,  Y10T156/1137 ,  Y10T156/1939

Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

公开(公告)号：US09299879B2

公开(公告)日：2016-03-29

申请号：US14662551

申请日：2015-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC: G02F1/136 ,  H01L33/00 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/00 ,  H01L51/56 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L21/425 ,  H01L21/70 ,  H01L21/8234 ,  H01L27/15

CPC classification number: H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

公开(公告)号：US09276224B2

公开(公告)日：2016-03-01

申请号：US14090692

申请日：2013-11-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Mai Akiba

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/15 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L51/0097 ,  H01L27/3244 ,  H01L27/326 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5315 ,  H01L2251/5338

Abstract: The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.

Abstract translation: 本发明的目的是提供一种包括形成在塑料基板上的OLED的发光装置，其防止由于水分或氧气渗透而导致的劣化。 在塑料基板上，用于防止氧或水分渗入OLED（“阻挡膜”）中的有机发光层的多个膜和具有比阻挡膜（“应力放松膜”）更小的应力的膜， 设置介于阻挡膜之间的膜。 由于层叠结构，如果在一个阻挡膜中发生裂纹，则另一个阻挡膜可以防止水分或氧气渗入有机发光层。 具有比阻挡膜更小的应力的应力缓和膜被插入在阻挡膜之间，使得可以减小整个密封膜的应力。 因此，难以产生由于应力引起的裂纹。

公开(公告)号：US09224667B2

公开(公告)日：2015-12-29

申请号：US13857195

申请日：2013-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L29/04 ,  H01L23/29 ,  H01L27/12 ,  H01L29/786 ,  H01L51/00 ,  H01L29/66

CPC classification number: H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

Abstract translation: 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大的表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

公开(公告)号：US09123595B2

公开(公告)日：2015-09-01

申请号：US14103994

申请日：2013-12-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakazu Murakami ,  Toru Takayama ,  Junya Maruyama

IPC: H01L21/58 ,  H01L33/20 ,  H01L21/67 ,  H01L51/00 ,  H01L27/12 ,  H01L21/762 ,  H01L29/786 ,  H01L29/66 ,  H01L21/20 ,  H01L21/683 ,  H01L27/15 ,  G02F1/1333 ,  H01L51/56 ,  H01L27/32

CPC classification number: H01L27/1218 ,  G02F1/133305 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/1368 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y02E10/549

Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Abstract translation: 本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。 特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。 对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。 然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。 最后，原来具有曲率的转印体被粘合到剥离层上，然后完成具有所需曲率的装置。

公开(公告)号：US20150136594A1

公开(公告)日：2015-05-21

申请号：US14578603

申请日：2014-12-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC: H01J37/34 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Abstract translation: 一个目的是提供一种用于形成氧化物半导体膜的沉积技术。 通过使用包含含氢浓度低的金属氧化物的烧结体（例如低于1×1016原子/ cm3）的溅射靶形成氧化物半导体膜，氧化物半导体膜含有少量的杂质如 含有以H 2 O或氢原子为代表的氢的化合物。 此外，该氧化物半导体膜用作晶体管的有源层。

公开(公告)号：US20140183515A1

公开(公告)日：2014-07-03

申请号：US14215135

申请日：2014-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hirokazu YAMAGATA ,  Shunpei Yamazaki ,  Toru Takayama

IPC: H01L27/32

CPC classification number: H01L51/524 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/0003 ,  H01L51/5056 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5253 ,  H01L51/56 ,  Y10S438/976

Abstract: A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of to the interlayer insulating film on the TFT for surface modification.

Abstract translation: 提供了一种高品质的发光装置，其具有不含常规问题的持久发光元件，因为能够降低劣化的结构，并且提供了制造发光器件的方法。 在形成堤之后，使用基于PVA（聚乙烯醇）的多孔物质等将暴露的阳极表面擦拭以使表面平整并从表面除去灰尘。 在TFT的层间绝缘膜和阳极之间形成绝缘膜。 或者，在表面改性用TFT上的层间绝缘膜的表面进行等离子体处理。

公开(公告)号：US20140001626A1

公开(公告)日：2014-01-02

申请号：US14010735

申请日：2013-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC: H01L23/12

CPC classification number: H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

Abstract translation: 本发明的目的是提供一种能够防止由于水分或氧气的渗透引起的劣化的半导体器件，例如具有形成在塑料基板上的有机发光器件的发光装置，以及 使用塑料基板的液晶显示装置。 根据本发明，形成在玻璃基板或石英基板（TFT，具有有机化合物的发光器件，液晶器件，存储器件，薄膜二极管，pin-junction硅 光电转换器，硅电阻元件等）与衬底分离，并转移到具有高导热性的塑料衬底。

公开(公告)号：US11422423B2

公开(公告)日：2022-08-23

申请号：US16667948

申请日：2019-10-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

IPC: H01L27/32 ,  G02F1/1368 ,  H01L51/52 ,  H05B33/04 ,  G02F1/1333 ,  G02F1/1362

Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

公开(公告)号：US10586816B2

公开(公告)日：2020-03-10

申请号：US15335854

申请日：2016-10-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Mayumi Mizukami ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L21/20 ,  H01L21/762 ,  H01L33/44 ,  G02F1/1362 ,  H01L29/24 ,  H01L29/786 ,  G02F1/136 ,  G02F1/1339 ,  G02F1/1341 ,  H01L27/32

Abstract: The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.