公开(公告)号：US20100206846A1

公开(公告)日：2010-08-19

申请号：US12706094

申请日：2010-02-16

申请人： Eiichi Nishimura ,  Masato Morishima ,  Morihiro Takanashi ,  Akitaka Shimizu ,  Yuichi Setsuhara

发明人： Eiichi Nishimura ,  Masato Morishima ,  Morihiro Takanashi ,  Akitaka Shimizu ,  Yuichi Setsuhara

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C16/505 ,  C23F1/00

CPC分类号： H01L21/31138 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  G03F7/427 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/0273

摘要： A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A process gas is introduced into the plasma producing chamber. The substrate is mounted on a mounting stage disposed in the substrate processing chamber, and a bias voltage is applied to the mounting stage. The ion trap has grounded conductors and insulating materials covering surfaces of the conductors.

摘要翻译： 能够适当地进行基板上的等离子体处理的基板处理装置。 基板容纳在容纳室中。 离子阱将容纳室分隔成等离子体产生室和基板处理室。 高频天线设置在等离子体产生室中。 将工艺气体引入等离子体产生室。 基板安装在设置在基板处理室中的安装台上，并且偏压被施加到安装台。 离子阱具有接地导体和覆盖导体表面的绝缘材料。

公开(公告)号：US20090188428A1

公开(公告)日：2009-07-30

申请号：US12361004

申请日：2009-01-28

申请人： Isamu SAKURAGI ,  Shigeru Tahara ,  Kumiko Yamazaki ,  Ryo Nonaka ,  Morihiro Takanashi ,  Eiichi Nishimura

发明人： Isamu SAKURAGI ,  Shigeru Tahara ,  Kumiko Yamazaki ,  Ryo Nonaka ,  Morihiro Takanashi ,  Eiichi Nishimura

IPC分类号： B05C13/00 ,  B01J19/00

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A substrate processing apparatus includes a processing vessel; a mounting table for mounting the substrate thereon in the processing vessel; a gas inlet unit provided in the processing vessel; a gas supply mechanism for supplying a hydrogen-containing gas into the processing vessel through the gas inlet unit; a gas discharge port provided at the processing vessel; a gas exhaust mechanism for exhausting an inside of the processing vessel through the gas discharge port; a catalyst provided in the processing vessel; and a heating unit for heating the catalyst. Hydrogen radicals are formed in the processing vessel by a catalytic cracking reaction between the hydrogen-containing gas and the catalyst of high temperature, and the substrate is processed by the hydrogen radicals.

摘要翻译： 基板处理装置包括处理容器; 用于将基板安装在处理容器中的安装台; 设置在处理容器中的气体入口单元; 用于通过气体入口单元将含氢气体供应到处理容器中的气体供给机构; 设置在处理容器的气体排出口; 排气机构，用于通过排气口排出处理容器的内部; 设置在处理容器中的催化剂; 以及用于加热催化剂的加热单元。 通过含氢气体和高温催化剂之间的催化裂化反应在处理容器中形成氢根，并且通过氢原子处理衬底。

公开(公告)号：US07510972B2

公开(公告)日：2009-03-31

申请号：US11353154

申请日：2006-02-14

申请人： Eiichi Nishimura ,  Kenya Iwasaki

发明人： Eiichi Nishimura ,  Kenya Iwasaki

IPC分类号： H01L21/302 ,  G06F17/50

CPC分类号： H01L21/31056 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/31116

摘要： A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface damaged layer and polishing remnants to be controlled easily. An insulating film on a substrate, which has been revealed by chemical mechanical polishing, is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The insulating film which has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

摘要翻译： 能够除去能够除去绝缘膜表面的表面损伤层和研磨残留物的基板的处理方法，能够容易地控制表面损伤层和研磨残留物的去除量。 通过化学机械抛光显示的基板上的绝缘膜在预定压力下暴露于含有氨和氟化氢的混合气体的气氛中。 已经暴露于混合气体的气氛的绝缘膜被加热到预定温度。

公开(公告)号：US20080210379A1

公开(公告)日：2008-09-04

申请号：US12016607

申请日：2008-01-18

申请人： Masaaki MIYAGAWA ,  Eiichi Nishimura

发明人： Masaaki MIYAGAWA ,  Eiichi Nishimura

IPC分类号： H01L21/3065

CPC分类号： H01J37/32642 ,  H01J37/32623

摘要： A substrate processing apparatus that can reliably improve the efficiency of heat transfer between a focus ring and a mounting stage. A housing chamber with the interior thereof evacuated houses a substrate. The substrate is mounted on a mounting stage that is disposed in the housing chamber. An annular focus ring is mounted on the mounting stage such as to surround a peripheral portion of the mounted substrate. A heat transfer film is formed on a surface of the focus ring which contacts the mounting stage by printing processing.

摘要翻译： 一种能够可靠地提高聚焦环和安装台之间的热传递效率的基板处理装置。 其内部抽真空的容纳室容纳衬底。 基板安装在设置在壳体室中的安装台上。 环形聚焦环安装在安装台上，以便围绕安装的基板的周边部分。 在通过打印处理接触安装台的聚焦环的表面上形成传热膜。

公开(公告)号：US07402523B2

公开(公告)日：2008-07-22

申请号：US11393915

申请日：2006-03-31

申请人： Eiichi Nishimura ,  Takehiko Orii

发明人： Eiichi Nishimura ,  Takehiko Orii

IPC分类号： H01L21/00 ,  B44C1/22

CPC分类号： H01L21/31133 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/76802

摘要： A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by applying another plasma which is different from the plasma used in the above etching process. The method further includes the process of removing the modified remaining film of the insulation film with a liquid chemical. The process of removing the modified remaining film can be also achieved by a dry etching method not employing a plasma.

摘要翻译： 通过图案化掩模蚀刻绝缘膜的方法包括以下步骤：在通过施加等离子体即将露出底层之前蚀刻绝缘膜，并通过施加另一种来改变绝缘膜的剩余膜的质量 与上述蚀刻工艺中使用的等离子体不同的等离子体。 该方法还包括用液体化学品去除绝缘膜的改性剩余膜的方法。 通过不使用等离子体的干式蚀刻方法也可以实现除去改性后的膜的工序。

公开(公告)号：US20060219171A1

公开(公告)日：2006-10-05

申请号：US11391390

申请日：2006-03-29

申请人： Yoshiaki Sasaki ,  Yusuke Muraki ,  Eiichi Nishimura ,  Yuko Ono

发明人： Yoshiaki Sasaki ,  Yusuke Muraki ,  Eiichi Nishimura ,  Yuko Ono

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/67742 ,  C23C16/4412 ,  C23C16/54 ,  H01L21/67017

摘要： In a substrate processing apparatus comprising a processing unit where a specific type of processing is executed on a wafer and a transfer chamber through which a wafer is carried into/out of the processing unit, the transfer chamber includes an air intake unit through which external air is drawn into the transfer chamber, a discharge unit disposed so as to face opposite the air intake unit, through which the discharge gas in the transfer chamber is discharged and a discharge gas filtering means disposed at the discharge unit and constituted with a harmful constituent eliminating filter through which a harmful constituent contained in the discharge gas, at least, is eliminated.

公开(公告)号：US20060154486A1

公开(公告)日：2006-07-13

申请号：US11032021

申请日：2005-01-11

申请人： Vaidyanathan Balasubramaniam ,  Yasunori Hatamura ,  Masaaki Hagihara ,  Eiichi Nishimura ,  Koichiro Inazawa ,  Rie Inazawa

发明人： Vaidyanathan Balasubramaniam ,  Yasunori Hatamura ,  Masaaki Hagihara ,  Eiichi Nishimura ,  Koichiro Inazawa ,  Rie Inazawa

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01J37/32082 ,  H01J2237/3342 ,  H01L21/31138 ,  H01L22/26

摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluorocarbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

摘要翻译： 提供了一种用于等离子体灰化以去除光刻胶残余物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用涉及含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的碳氟化合物残留物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 在第二清洗步骤中使用小于20mTorr的室压力。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。

公开(公告)号：US20060144817A1

公开(公告)日：2006-07-06

申请号：US11024747

申请日：2004-12-30

申请人： Vaidyanathan Balasubramaniam ,  Masaaki Hagihara ,  Eiichi Nishimura ,  Koichiro Inazawa ,  Rie Inazawa

发明人： Vaidyanathan Balasubramaniam ,  Masaaki Hagihara ,  Eiichi Nishimura ,  Koichiro Inazawa ,  Rie Inazawa

IPC分类号： G01L21/30 ,  G01R31/00 ,  B44C1/22 ,  H01L21/302

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01L21/02063

摘要： A method is provided for low-pressure plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

摘要翻译： 提供了一种用于低压等离子体灰化以去除光致抗蚀剂残余物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用包含含氧气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的氟碳残余物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 在第二清洗步骤中使用小于20mTorr的室压力。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。

公开(公告)号：US20050214683A1

公开(公告)日：2005-09-29

申请号：US11064088

申请日：2005-02-24

申请人： Eiichi Nishimura ,  Takashi Tanaka ,  Gen You ,  Minoru Honda ,  Mitsuaki Iwashita

发明人： Eiichi Nishimura ,  Takashi Tanaka ,  Gen You ,  Minoru Honda ,  Mitsuaki Iwashita

IPC分类号： G03F7/40 ,  A61N5/00 ,  G03C5/00 ,  G21G5/00 ,  H01L21/027

CPC分类号： G03F7/40

摘要： In a film reforming method for reforming a film layer to be reformed by irradiating electron beams thereon, the electron beams are irradiated in a state where the film layer is cooled. Further, in a slimming amount controlling method for controlling a slimming amount of a resist film layer, the slimming amount thereof is controlled by the irradiation amount of electron beams irradiated thereon in a state where the resist film layer having a specified opening dimension is cooled. Furthermore, in a film reforming apparatus including a mounting unit for mounting thereon an object to be processed and an electron beam irradiating unit for irradiating electron beams on the object disposed on the mounting unit to thereby reform a film layer to be reformed, formed on an object, the electron beams are irradiated from the electron beam irradiating unit in a state where the film layer is cooled by a cooling unit provided in the mounting unit.

摘要翻译： 在通过在其上照射电子束来重整薄膜层的薄膜重整方法中，在薄膜层被冷却的状态下照射电子束。 此外，在用于控制抗蚀剂膜层的减肥量的减肥量控制方法中，在具有指定的开口尺寸的抗蚀剂膜层被冷却的状态下，通过照射在其上的电子束的照射量来控制其减肥量。 此外，在包括用于在其上安装待处理物体的安装单元和用于在设置在安装单元上的物体上照射电子束的电子束照射单元的薄膜重整设备中，从而将形成在其上的膜层重新形成 在由设置在安装单元中的冷却单元冷却膜层的状态下，从电子束照射单元照射电子束。

公开(公告)号：US08961737B2

公开(公告)日：2015-02-24

申请号：US12393263

申请日：2009-02-26

申请人： Eiichi Nishimura

发明人： Eiichi Nishimura

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32165 ,  H01J37/321

摘要： A plasma processing apparatus comprises a plasma generation chamber where plasma is generated by exciting a processing gas with high-frequency power applied to a coil wound around a side wall of a reaction container, a processing chamber where a specific type of processing is executed on a wafer with the plasma thus generated and a high-frequency power source capable of selectively outputting either first high-frequency power with a reference frequency or second high-frequency power with a frequency (2n+1)/2 times the reference frequency, to be applied to the coil.

摘要翻译： 等离子体处理装置包括等离子体产生室，其中通过施加到缠绕在反应容器的侧壁上的线圈的高频功率激发处理气体而产生等离子体;处理室，其特定类型的处理在 具有这样产生的等离子体的晶片，并且能够以基准频率或第二高频功率选择性地输出具有频率（2n + 1）/ 2倍于参考频率的第一高频功率的高频电源为 应用于线圈。