摘要:
A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
摘要翻译:发光半导体器件(10)连续地包括蓝宝石衬底(1),AlN缓冲层(2),高载流子(n型)掺杂的硅(Si)掺杂的GaN n +层(3), 具有高载流子(n型)浓度的Si掺杂(Al x Ga 1-x 3)y 3 In 1-y 3 N n +层(4),锌(Zn)和Si掺杂(Alx2Ga1-x2)y2In1-y2N发射层(5) 和Mg掺杂(Al x Ga 1-x 1)y 1 In 1-y 1 N p层(6)。 AlN层(2)的厚度为500埃。 GaN n +层(3)的厚度约为2.0μm,电子浓度为2×1018 / cm3。 n +层(4)的厚度约为2.0μm,电子浓度为2×1018 / cm3。 发射层(5)的厚度约为0.5μm。 p层6的厚度约为1.0μm,空穴浓度为2×1017 / cm3。 镍电极(7,8)分别连接到p层(6)和n +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 选择各层(4,5,6)中的Al,Ga和In的组成比以满足n +层(3)中的GaN的晶格常数。 LED(10)被设计为提高发光强度并获得更纯的蓝色。
摘要:
A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 &mgr;m thickness. The p-layer 6 has about a 1.0 &mgr;m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
摘要:
A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8) from each other. The composition ration of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n.sup.+ -layer (3). The LED (10) is designed to improve luminous intensity and to obtain a purer blue color.
摘要翻译:发光半导体器件(10)连续地包括蓝宝石衬底(1),AlN缓冲层(2),高载流子(n型)掺杂的硅(Si)掺杂的GaN n +层(3), 具有高载流子(n型)浓度的Si掺杂(Al x Ga 1-x 3)y 3 In 1-y 3 N n +层(4),锌(Zn)和Si掺杂(Alx2Ga1-x2)y2In1-y2N发射层(5) 和Mg掺杂(Al x Ga 1-x 1)y 1 In 1-y 1 N p层(6)。 AlN层(2) - 厚度为500 ANGSTROM。 GaN N +层(3)的厚度约为2.0μm,电子浓度约为2×1018 / cm3。 n +层(4)的厚度约为2.0μm,电子浓度约为2×10 18 / cn 3。 发射层(5)的厚度约为0.5μm。 p层6的厚度为约1.0μm,并且具有约2×10 17 / cm 3的空穴浓度。 镍电极(7,8)分别连接到p层(6)和n +层(4)。 沟槽(9)将电极(7,8)彼此电绝缘。 选择各层(4,5,6)中的Al,Ga和In的组成比来满足n +层(3)中的GaN的晶格常数。 LED(10)被设计成改善发光强度并获得更纯的蓝色。
摘要:
The present invention provides a method for producing a Group III nitride compound semiconductor, which method permits only minimal reaction of the semiconductor with a hetero-substrate during epitaxial growth and induces no cracks in the Group III nitride compound semiconductor even when the semiconductor is cooled to room temperature. The method includes a buffer layer formation step for forming a gas-etchable buffer layer on the hetero-substrate, and a semiconductor formation step for epitaxially growing the Group III nitride compound semiconductor on the buffer layer through a vapor phase growth method, wherein at least a portion of the buffer layer is gas-etched during or after the semiconductor formation step.
摘要:
A light-emitting semiconductor device provides an active layer which comprises thirteen (13) layers that includes six (6) pairs of quantum barrier layers made of Al0.95In0.05N and quantum well layers made of Al0.70In0.30N, which are laminated together alternately. The semiconductor device may also comprise a quantum well layer having a high composition ratio of indium (In). Forming the quantum barrier layer and the quantum well layer to have a high composition ratio of indium (In) increases the lattice constant of the active layer of the semiconductor device.
摘要翻译:一种发光半导体器件提供了一种有源层,其包括十三(13)层,其包括六(6)对量子阻挡层,所述量子势垒层由Al 0.95 N和N N N制成, 交替地层叠在一起的由Al 0.70 N 3 O 3 N制成的量子阱层。 半导体器件还可以包括具有高的铟(In)组成比的量子阱层。 形成量子势垒层和量子阱层以具有高的铟(In)组成比增加了半导体器件的有源层的晶格常数。
摘要:
A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Green light emission is obtained by this constitution. Further, only doping Zn of 5.times.10.sup.19 /cm.sup.3 into the emission layer (5) enables red light emission.
摘要翻译:适用于多色平板显示器的发光半导体器件(100)包括蓝宝石衬底(1),AlN缓冲层(2),掺杂硅(Si)的GaN n +层(3) 载流子(n型)浓度,高载流子(n型)浓度的Si掺杂(Alx2Ga1-x2)y2In1-2Nn +层(4),锌(Zn)和掺杂Si的p型(Al x Ga 1 -x1)y1In1-y1N发射层(5)和Mg掺杂(Alx2Ga1-x2)y2In1-y2N p层(6)。 AlN层(2)具有500厚度。 GaN n +层(3)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 n +层(4)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 发射层(5)厚约0.5μm。 p层6的厚度约为1.0μm,空穴浓度为2×10 17 / cm 3。 镍电极(7,8)分别连接到p层(6)和n +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 通过这种结构获得绿色发光。 此外,仅向发射层(5)掺杂5×10 19 / cm 3的Zn使得能够发红光。
摘要:
A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure. This structure includes: (1) an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; (2) a p-layer having p-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; and (3) an emission layer disposed between the n-layer and the p-layer. The device also has a metal electrode and a contact layer that is disposed between the p-layer and the metal electrode. The contact layer is doped with an acceptor impurity more heavily that is the p-layer. The acceptor impurity may be magnesium (Mg). The contact layer may be doped within the range of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.2l /cm.sup.3 and may comprise a first and a second contact layer.
摘要翻译:一种具有改善的金属电极和半导体结构的发光半导体器件,其降低了器件的驱动电压。 该器件具有异质p-n结结构。 该结构包括:(1)具有n型导电的n层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体,包括x = 0,y = 0,x = y = 0; (2)具有p型导电的p层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体,包括x = 0,y = 0,x = y = 0; 和(3)设置在n层和p层之间的发射层。 该器件还具有设置在p层和金属电极之间的金属电极和接触层。 接触层掺杂较多的受体杂质,即p层。 受主杂质可以是镁(Mg)。 接触层可以掺杂在1×10 20 / cm 3至1×102l / cm 3的范围内,并且可以包括第一和第二接触层。
摘要:
A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.X2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Lead lines (21, 22) are connected with the electrodes (7, 8) by a wedge bonding method to desirably reduce the surface area of the electrodes on the light-emitting side of the device upon which the electrodes are situated to thereby increase light emission from the device.
摘要翻译:发光半导体器件(10)连续地具有蓝宝石衬底(1),AlN缓冲层(2),高载流子(n型)掺杂的硅(Si)掺杂的GaN n +层(3), 锌(Zn)和Si掺杂(Al x Ga 1-x 1)y 1 In 1-y 1 N发射层(5)的Si掺杂(AlX2Ga1-x2)y2In1-y2N n +层(4) 和掺杂Mg的(Alx2Ga1-x2)y2In1-y2N p层(6)。 AlN缓冲层(2)具有500厚度。 GaN n +层(3)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 n +层(4)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 发射层(5)厚约0.5μm。 p层6的厚度约为1.0μm,空穴浓度为2×10 17 / cm 3。 镍电极(7,8)分别连接到p层(6)和n +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 引线(21,22)通过楔形接合方法与电极(7,8)连接,以期望减少电极位于其上的器件的发光侧的电极的表面积,从而增加光 从设备发射。
摘要:
A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.
摘要:
A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.