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    Method for manufacturing semiconductor device using a laser annealing process
    12.
    发明授权
    Method for manufacturing semiconductor device using a laser annealing process 有权
    使用激光退火工艺制造半导体器件的方法

    公开(公告)号：US08329520B2

    公开(公告)日：2012-12-11

    申请号：US12750739

    申请日：2010-03-31

    申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi

    发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi

    IPC分类号： H01L21/84

    CPC分类号： H01L27/1251 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L27/1281

    摘要： An island-shaped single crystal semiconductor layer whose top surface has a plane within ±10° from a {211} plane is formed on an insulating surface; a non-single-crystal semiconductor layer is formed in contact with the top surface and a side surface of the single crystal semiconductor layer and on the insulating surface; the non-single-crystal semiconductor layer is irradiated with laser light to melt the non-single-crystal semiconductor layer, and to crystallize the non-single-crystal semiconductor layer formed on the insulating surface with use of the single crystal semiconductor layer as a seed crystal, so that a crystalline semiconductor layer is formed. A semiconductor device having an n-channel transistor and a p-channel transistor formed with use of the crystalline semiconductor layer is provided.

    摘要翻译： 在绝缘面上形成顶面与{211}面成±10°以内的岛状单晶半导体层， 形成与单晶半导体层的顶表面和侧表面以及绝缘表面接触的非单晶半导体层; 用激光照射非单晶半导体层以熔化非单晶半导体层，并且使用单晶半导体层将形成在绝缘表面上的非单晶半导体层结晶为 晶种，从而形成结晶半导体层。 提供了具有使用晶体半导体层形成的n沟道晶体管和p沟道晶体管的半导体器件。

    SEMICONDUCTOR DEVICE
    13.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110084273A1

    公开(公告)日：2011-04-14

    申请号：US12900145

    申请日：2010-10-07

    申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

    发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78696

    摘要： One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.

    摘要翻译： 其目的之一是提供具有稳定电特性的半导体器件，其中使用氧化物半导体。 该半导体器件包括薄膜晶体管，该薄膜晶体管包括氧化物半导体层，以及位于薄膜晶体管上的氧化硅层。 薄膜晶体管包括栅极电极层，厚度等于或大于100nm且等于或小于350nm的栅极绝缘层，氧化物半导体层，源极电极层和漏极电极层。 在薄膜晶体管中，在将温度为85°的栅极电极层施加30V或-30V的电压的测量之前和之后，阈值电压值的差为1V以下 C.持续12小时。

    SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110084268A1

    公开(公告)日：2011-04-14

    申请号：US12898366

    申请日：2010-10-05

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

    IPC分类号： H01L29/12 ,  H01L21/16

    CPC分类号： H01L29/78669 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78678 ,  H01L29/7869

    摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

    摘要翻译： 本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响 防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。 为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是 连接到具有抑制的杂质浓度的氧化物半导体层。 另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。

    Semiconductor device
    16.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09136388B2

    公开(公告)日：2015-09-15

    申请号：US13549867

    申请日：2012-07-16

    申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tatsuya Honda ,  Takehisa Hatano

    发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tatsuya Honda ,  Takehisa Hatano

    IPC分类号： H01L29/26 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/78618

    摘要： Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

    摘要翻译： 提供了能够实现所谓的常关断开关元件的晶体管的结构及其制造方法。 提供了通过提高晶体管的特性实现高速响应和高速操作的半导体器件的结构及其制造方法。 提供了一种高度可靠的半导体器件。 在其中半导体层，源极和漏极电极层，栅极绝缘层和栅极电极层以该顺序堆叠的晶体管中。 作为半导体层，含有铟，镓，锌和氧中的至少四种元素的氧化物半导体层，铟的组成比（原子百分比）为镓和a的组成比的两倍以上 使用锌的组成比。

    Light-emitting element, light-emitting device, lighting device, and electronic devices
    20.
    发明授权
    Light-emitting element, light-emitting device, lighting device, and electronic devices 有权
    发光元件，发光装置，照明装置和电子装置

    公开(公告)号：US08809841B2

    公开(公告)日：2014-08-19

    申请号：US13303637

    申请日：2011-11-23

    申请人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

    发明人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

    IPC分类号： H01L51/50

    CPC分类号： H01L51/5012 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5016 ,  H01L51/506 ,  H01L51/5203 ,  H01L2251/558

    摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

    摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。