Electro-Optic Silicon Modulator With Capacitive Loading In Both Slots Of Coplanar Waveguides
    11.
    发明申请
    Electro-Optic Silicon Modulator With Capacitive Loading In Both Slots Of Coplanar Waveguides 有权
    具有电容负载的电光硅调制器在共面波导的两个槽中

    公开(公告)号:US20150043866A1

    公开(公告)日:2015-02-12

    申请号:US14454881

    申请日:2014-08-08

    IPC分类号: G02F1/225

    摘要: Embodiments of the present disclosure provide a high-speed silicon modulator without the microwave mode conversion and provide 50-ohm impedance matching to drivers simultaneously. In one aspect, a device may include an input waveguide region, an optic splitter, two optic phase shifters, an optic splitter, and an output waveguide. The device may include two curved waveguides. Either or both of the curved waveguides may have specially doped regions including PN junctions or MOS capacitors. The PN junctions or MOS capacitors may be alternatively connected to both slots of a coplanar waveguide forming the electrodes.

    摘要翻译: 本公开的实施例提供了一种无需微波模式转换的高速硅调制器,同时为驱动器提供50欧姆阻抗匹配。 在一个方面,器件可以包括输入波导区域,光分路器,两个光学移相器,光分路器和输出波导。 该装置可以包括两个弯曲波导。 弯曲波导中的任一个或两者可以具有包括PN结或MOS电容器的特殊掺杂区域。 PN结或MOS电容器可以替代地连接到形成电极的共面波导的两个槽。

    Hybrid Multichannel or WDM Integrated Transceiver
    13.
    发明申请
    Hybrid Multichannel or WDM Integrated Transceiver 审中-公开
    混合多通道或WDM集成收发器

    公开(公告)号:US20130287407A1

    公开(公告)日:2013-10-31

    申请号:US13871877

    申请日:2013-04-26

    发明人: Dong Pan Yanwu Zhang

    IPC分类号: H04B10/40

    摘要: Various embodiments of a hybrid multichannel or WDM integrated transceiver are presented. In one aspect, a transceiver includes a transmitter portion and a receiver portion. The transmitter portion includes an optical waveguide structure that includes multiple channels of optical waveguide modulators on a substrate. The receiver portion includes at least one surface light illuminated photodetector.

    摘要翻译: 提出了混合多通道或WDM集成收发器的各种实施例。 在一个方面,收发机包括发射机部分和接收机部分。 发射机部分包括在衬底上包括多个光波导调制器通道的光波导结构。 接收器部分包括至少一个表面光照射光电检测器。

    Waveguide-integrated avalanche photodiode

    公开(公告)号:US11322638B2

    公开(公告)日:2022-05-03

    申请号:US16705755

    申请日:2019-12-06

    摘要: Various embodiments of a monolithic avalanche photodiode (APD) are described, which may be fabricated on a silicon-on-insulator substrate. The monolithic APD includes an optical waveguide that guides an incident light to an active region of the APD. An optical coupler is integrally formed with the optical waveguide to capture the incident light. The monolithic APD also includes an optical reflector to reflect a portion of the incident light that is not readily captured by the optical coupler back to the optical coupler for further capturing. The active region includes an absorption layer for converting the incident light into a photocurrent, an epitaxial structure for amplifying the photocurrent by avalanche multiplication, as well as a pair of electrical conductors for conducting the amplified photocurrent.

    Monolithic Integrated Coherent Transceiver

    公开(公告)号:US20210359763A1

    公开(公告)日:2021-11-18

    申请号:US17389387

    申请日:2021-07-30

    摘要: Various embodiments of a monolithic transceiver are described, which may be fabricated on a semiconductor substrate. The monolithic transceiver includes a coherent receiver module (CRM), a coherent transmitter module (CTM), and a local oscillation splitter to feed a local oscillation to the CRM and the CTM with a tunable power ratio. The monolithic transceiver provides tunable responsivity by employing photodiodes for opto-electrical conversion. The monolithic transceiver also employs a polarization beam rotator-splitter (PBRS) and a polarization beam rotator-combiner (PBRC) for supporting modulation schemes including polarization multiplexed quadrature amplitude modulation (PM-QAM) and polarization multiplexed quadrature phase shift keying (PM-QPSK).

    Rib-type waveguide silicon modulators and optical devices

    公开(公告)号:US09891451B2

    公开(公告)日:2018-02-13

    申请号:US15238688

    申请日:2016-08-16

    摘要: A ring optical modulator includes a SOI substrate, including at least first and second top silicon layers, and a silicon-based ring resonator formed on the SOI substrate. The silicon-based ring resonator includes first and second top silicon layers, a thin dielectric gate layer disposed between the top silicon layers, first and second electric contacts, and first rib-type waveguide and ring-shape rib-type waveguide formed on the second top silicon layer. The thin dielectric layer includes a first side in contact with the first top silicon layer and a second side in contact with the second top silicon layer. With electric signals applied on the electric contacts, free carriers accumulate, deplete or invert within the top silicon layers on the first and second sides of the thin dielectric gate layer beneath the ring-shape rib-type waveguide, simultaneously, and a refractive index of the ring-shape rib-type waveguide confining optical fields is modulated.