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    FABRICATION METHOD OF PACKAGING SUBSTRATE
    13.
    发明申请
    FABRICATION METHOD OF PACKAGING SUBSTRATE 审中-公开
    包装基材的制造方法

    公开(公告)号：US20160013074A1

    公开(公告)日：2016-01-14

    申请号：US14866106

    申请日：2015-09-25

    Applicant: Siliconware Precision Industries Co., Ltd.

    Inventor： Wei-Ping Wang ,  Pang-Chun Lin ,  Chin-Chih Hsiao ,  Kuan-I Cheng ,  Cheng-Wen Chiu

    IPC: H01L21/48 ,  H01L23/00 ,  H01L21/56

    CPC classification number: H01L21/4857 ,  H01L21/4846 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/49822 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    Abstract: A method for fabricating a packaging substrate includes: providing a carrier having a first metal layer and a second metal layer formed on the first metal layer; forming a first circuit layer on the second metal layer and forming a separating portion on an edge of the second metal layer such that the separating portion is spaced from the first circuit layer; forming a dielectric layer on the second metal layer and the first circuit layer such that the first circuit layer and the separating portion are embedded in the dielectric layer and portions of the dielectric layer are formed between the first circuit layer and the separating portion; forming a second circuit layer on the dielectric layer; and applying forces on the separating portion so as to remove the first metal layer and the carrier, thereby maintaining the integrity of the first circuit layer.

    Abstract translation: 一种用于制造封装衬底的方法，包括：提供具有形成在第一金属层上的第一金属层和第二金属层的载体; 在所述第二金属层上形成第一电路层，并在所述第二金属层的边缘上形成分离部分，使得所述分离部分与所述第一电路层隔开; 在所述第二金属层和所述第一电路层上形成介电层，使得所述第一电路层和所述分离部分嵌入在所述电介质层中，并且所述电介质层的部分形成在所述第一电路层与所述分离部之间; 在所述电介质层上形成第二电路层; 并且在分离部分上施加力以便去除第一金属层和载体，从而保持第一电路层的完整性。

    PACKAGE ON PACKAGE STRUCTURE AND FABRICATION METHOD THEREOF
    14.
    发明申请
    PACKAGE ON PACKAGE STRUCTURE AND FABRICATION METHOD THEREOF 有权
    包装结构及其制造方法

    公开(公告)号：US20150091150A1

    公开(公告)日：2015-04-02

    申请号：US14290145

    申请日：2014-05-29

    Applicant: Siliconware Precision Industries Co., Ltd.

    Inventor： Pang-Chun Lin ,  Wei-Ping Wang ,  Chun-Yuan Li ,  Shao-tzu Tang ,  Ying-Chou Tsai

    IPC: H01L25/11 ,  H01L25/00

    CPC classification number: H01L23/49811 ,  H01L23/49827 ,  H01L23/5389 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A method for fabricating a POP structure is disclosed. First, a first package is provided, which has: a dielectric layer; a stacked circuit layer embedded in the dielectric layer and exposed from upper and lower surfaces of the dielectric layer; a plurality of conductive posts and a semiconductor chip disposed on the upper surface of the dielectric layer and electrically connected to the stacked circuit layer; and an encapsulant formed on upper surface of the dielectric layer for encapsulating the semiconductor chip and the conductive posts and having a plurality of openings for exposing top ends of the conductive posts. Then, a second package is disposed on the encapsulant and electrically connected to the conductive posts. The formation of the conductive posts facilitates to reduce the depth of the openings of the encapsulant, thereby reducing the fabrication time and increasing the production efficiency and yield.

    Abstract translation: 公开了一种用于制造POP结构的方法。 首先，提供第一封装，其具有：介电层; 嵌入介电层中并从电介质层的上表面和下表面露出的堆叠电路层; 多个导电柱和设置在电介质层的上表面上并电连接到堆叠电路层的半导体芯片; 以及密封剂，其形成在所述电介质层的上表面上，用于封装所述半导体芯片和所述导电柱，并具有用于暴露所述导电柱的顶端的多个开口。 然后，第二包装被设置在密封剂上并电连接到导电柱。 导电柱的形成有助于减小密封剂的开口的深度，从而减少制造时间并提高生产效率和产率。

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