公开(公告)号：US20180012998A1

公开(公告)日：2018-01-11

申请号：US15698210

申请日：2017-09-07

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L29/78 ,  H01L21/768 ,  H01L29/66 ,  H01L21/306 ,  H01L21/3105 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7848 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3185 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes: a sidewall insulating film; a gate electrode; source and drain regions; a first stress film; and a second stress film.

公开(公告)号：US09794457B2

公开(公告)日：2017-10-17

申请号：US14891947

申请日：2014-06-20

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/11 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/369 ,  G02B1/118

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US09478572B2

公开(公告)日：2016-10-25

申请号：US14820888

申请日：2015-08-07

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0232 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/083

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.

公开(公告)号：US20150001376A1

公开(公告)日：2015-01-01

申请号：US14313462

申请日：2014-06-24

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/357 ,  H04N5/374

Abstract: An image pickup device includes: a photodiode provided in a silicon substrate, and configured to generate electric charge corresponding to an amount of received light, by performing photoelectric conversion; and a transfer transistor provided at an epitaxial layer on the silicon substrate, and configured to transfer the electric charge generated in the photodiode, wherein the transfer transistor includes a gate electrode and a channel region, the gate electrode being embedded in the epitaxial layer, and the channel region surrounding the gate electrode, and the channel region has, in a thickness direction, a concentration gradient in which a curvature of a potential gradient is free from a mixture of plus and minus signs.

Abstract translation: 一种图像拾取装置，包括：设置在硅衬底中的光电二极管，其被配置为通过进行光电转换来产生与所接收的光量相对应的电荷; 以及转移晶体管，设置在所述硅衬底上的外延层处，并且被配置为转移在所述光电二极管中产生的电荷，其中所述转移晶体管包括栅电极和沟道区，所述栅电极被嵌入所述外延层中，以及 围绕栅电极的沟道区域和沟道区域在厚度方向上具有其中电位梯度的曲率没有加号和负号的混合的浓度梯度。

公开(公告)号：US20140030840A1

公开(公告)日：2014-01-30

申请号：US14039836

申请日：2013-09-27

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H01L21/762

CPC classification number: H01L27/1463 ,  H01L21/76224 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14689

Abstract: Disclosed herein is a semiconductor device including an element isolation region configured to be formed on a semiconductor substrate, wherein the element isolation region is formed of a multistep trench in which trenches having different diameters are stacked and diameter of an opening part of the lower trench is smaller than diameter of a bottom of the upper trench.

Abstract translation: 本文公开了一种半导体器件，其包括被配置为形成在半导体衬底上的元件隔离区域，其中元件隔离区域由多个沟槽形成，其中具有不同直径的沟槽被堆叠，并且下沟槽的开口部分的直径为 小于上沟槽底部的直径。

公开(公告)号：US10833128B2

公开(公告)日：2020-11-10

申请号：US13926400

申请日：2013-06-25

Applicant: Sony Corporation

Inventor： Yuki Miyanami ,  Masashi Nakazawa

IPC: H01L27/30 ,  H01L51/44 ,  H01L27/28

Abstract: There is provided a solid-state imaging device including a semiconductor base element, an organic photoelectric conversion layer formed above the semiconductor base element, a contact hole formed in an insulating layer on the semiconductor base element, a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element, and a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer.

公开(公告)号：US10771664B2

公开(公告)日：2020-09-08

申请号：US16251531

申请日：2019-01-18

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US10515988B2

公开(公告)日：2019-12-24

申请号：US15551129

申请日：2016-02-12

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Kentaro Akiyama ,  Yorito Sakano ,  Takashi Oinoue ,  Yoshiya Hagimoto ,  Yusuke Matsumura ,  Naoyuki Sato ,  Yuki Miyanami ,  Yoichi Ueda ,  Ryosuke Matsumoto

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/374 ,  H04N5/217 ,  H04N5/235 ,  H04N5/355 ,  H04N5/367 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/02

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.

公开(公告)号：US10361242B2

公开(公告)日：2019-07-23

申请号：US15835791

申请日：2017-12-08

Applicant: Sony Corporation

Inventor： Itaru Oshiyama ,  Yuki Miyanami ,  Susumu Hiyama ,  Kazuki Tanaka

IPC: H01L27/146

Abstract: A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.

公开(公告)号：US10256267B2

公开(公告)日：2019-04-09

申请号：US15719824

申请日：2017-09-29

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N9/083

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.