METHODS OF TRANSFERRING A LAMINA TO A RECEIVER ELEMENT
    11.
    发明申请
    METHODS OF TRANSFERRING A LAMINA TO A RECEIVER ELEMENT 有权
    将接收器转移到接收器元件的方法

    公开(公告)号:US20100147448A1

    公开(公告)日:2010-06-17

    申请号:US12335479

    申请日:2008-12-15

    CPC分类号: H01L21/76254

    摘要: Methods for bonding a donor wafer to a receiver element and transferring a lamina from the donor wafer to the receiver element are disclosed herein. The donor wafer may be, for example, a monocrystalline silicon wafer with a thickness of from about 300 microns to about 1000 microns, and the lamina may be may be less than 100 microns thick. The receiver element may be composed of, for example, metal or glass, and the receiver element may have dissimilar thermal expansion properties from the lamina. Although the lamina and the receiver element may have dissimilar thermal expansion properties, the methods disclosed herein maintain the integrity of the bond between the lamina and the receiver element.

    摘要翻译: 本文公开了将施主晶片接合到接收器元件并将层从供体晶片传送到接收器元件的方法。 施主晶片可以是例如厚度为约300微米至约1000微米的单晶硅晶片,并且薄层可以小于100微米厚。 接收器元件可以由例如金属或玻璃构成,并且接收器元件可以具有与层片不同的热膨胀特性。 虽然层板和接收器元件可能具有不同的热膨胀性质,但是本文公开的方法保持了层间和接收器元件之间的接合的完整性。

    Methods of transferring a lamina to a receiver element
    12.
    发明授权
    Methods of transferring a lamina to a receiver element 有权
    将层转移到接收器元件的方法

    公开(公告)号:US07967936B2

    公开(公告)日:2011-06-28

    申请号:US12335479

    申请日:2008-12-15

    CPC分类号: H01L21/76254

    摘要: Methods for bonding a donor wafer to a receiver element and transferring a lamina from the donor wafer to the receiver element are disclosed herein. The donor wafer may be, for example, a monocrystalline silicon wafer with a thickness of from about 300 microns to about 1000 microns, and the lamina may be may be less than 100 microns thick. The receiver element may be composed of, for example, metal or glass, and the receiver element may have dissimilar thermal expansion properties from the lamina. Although the lamina and the receiver element may have dissimilar thermal expansion properties, the methods disclosed herein maintain the integrity of the bond between the lamina and the receiver element.

    摘要翻译: 本文公开了将施主晶片接合到接收器元件并将层从供体晶片传送到接收器元件的方法。 施主晶片可以是例如厚度为约300微米至约1000微米的单晶硅晶片,并且薄层可以小于100微米厚。 接收器元件可以由例如金属或玻璃构成,并且接收器元件可以具有与层片不同的热膨胀特性。 虽然层板和接收器元件可能具有不同的热膨胀性质,但是本文公开的方法保持了层间和接收器元件之间的接合的完整性。

    BREATH MONITORING AND FEEDBACK APPLICATION AND METHODS

    公开(公告)号:US20210137450A1

    公开(公告)日:2021-05-13

    申请号:US17035393

    申请日:2020-09-28

    申请人: Aditya Agarwal

    发明人: Aditya Agarwal

    摘要: In one aspect, a computerized method breath monitoring and feedback application comprising the steps of providing a breath monitoring and feedback application in a mobile device; providing a means to monitor a user breath; communicating the user breath statistics to the breath monitoring and feedback application; and with the breath monitoring and feedback application, communicating an application mediation technique to the user.

    Determining a trust level of a user in a social network environment
    16.
    发明授权
    Determining a trust level of a user in a social network environment 有权
    确定社交网络环境中用户的信任级别

    公开(公告)号:US08656463B2

    公开(公告)日:2014-02-18

    申请号:US12900430

    申请日:2010-10-07

    摘要: A system and method for determining a trust level for a non-approved user in a social network is described. The method includes monitoring requests for social network interactions between an approved user and the non-approved user and determining if each interaction requested is of a first type or a second type. The method further includes increasing a first trust value when the interaction requested is of the first type and increasing a second trust value when the interaction requested is of the second type. The method further includes determining the trust level based on the first trust value and the second trust value. The method further includes changing the status of the non-approved user to an approved user based on the trust level, the first trust value and/or the second trust value.

    摘要翻译: 描述了用于确定社交网络中的未经认可的用户的信任级别的系统和方法。 该方法包括监视批准用户和未经认可的用户之间的社交网络交互的请求,并确定所请求的每个交互是否是第一类型或第二类型。 所述方法还包括当所请求的交互是第一类型时增加第一信任值,并且当所请求的交互是第二类型时增加第二信任值。 该方法还包括基于第一信任值和第二信任值来确定信任级别。 该方法还包括基于信任级别,第一信任值和/或第二信任值来将未经批准的用户的状态改变为经批准的用户。

    Formed ceramic receiver element adhered to a semiconductor lamina
    17.
    发明授权
    Formed ceramic receiver element adhered to a semiconductor lamina 有权
    形成的陶瓷接收元件粘附到半导体层

    公开(公告)号:US08148189B2

    公开(公告)日:2012-04-03

    申请号:US12826762

    申请日:2010-06-30

    IPC分类号: H01L31/18 H01L21/71

    摘要: A method is described to create a thin semiconductor lamina adhered to a ceramic body. The method includes defining a cleave plane in a semiconductor donor body, applying a ceramic mixture to a first face of the semiconductor body, the ceramic mixture including ceramic powder and a binder, curing the ceramic mixture to form a ceramic body, and cleaving a lamina from the semiconductor donor body at the cleave plane, the lamina remaining adhered to the ceramic body. Forming the ceramic body this way allows outgassing of volatiles during the curing step. Devices can be formed in the lamina, including photovoltaic devices. The ceramic body and lamina can withstand high processing temperatures. In some embodiments, the ceramic body may be conductive.

    摘要翻译: 描述了一种制造粘附到陶瓷体上的薄半导体层的方法。 该方法包括在半导体施主体中限定切割平面,将陶瓷混合物施加到半导体主体的第一面,陶瓷混合物包括陶瓷粉末和粘合剂,固化陶瓷混合物以形成陶瓷体,并切割层 在切割面处从半导体供体体中残留的层保留在陶瓷体上。 通过这种方式形成陶瓷体,可以在固化步骤中使挥发物脱气。 器件可以形成在薄片中,包括光伏器件。 陶瓷体和薄片可以承受高的加工温度。 在一些实施例中,陶瓷体可以是导电的。

    Formed Ceramic Receiver Element Adhered to a Semiconductor Lamina
    18.
    发明申请
    Formed Ceramic Receiver Element Adhered to a Semiconductor Lamina 有权
    形成的陶瓷接收器元件粘附到半导体层

    公开(公告)号:US20120003775A1

    公开(公告)日:2012-01-05

    申请号:US12826762

    申请日:2010-06-30

    IPC分类号: H01L31/18 H01L21/71

    摘要: A method is described to create a thin semiconductor lamina adhered to a ceramic body. The method includes defining a cleave plane in a semiconductor donor body, applying a ceramic mixture to a first face of the semiconductor body, the ceramic mixture including ceramic powder and a binder, curing the ceramic mixture to form a ceramic body, and cleaving a lamina from the semiconductor donor body at the cleave plane, the lamina remaining adhered to the ceramic body. Forming the ceramic body this way allows outgassing of volatiles during the curing step. Devices can be formed in the lamina, including photovoltaic devices. The ceramic body and lamina can withstand high processing temperatures. In some embodiments, the ceramic body may be conductive.

    摘要翻译: 描述了一种制造粘附到陶瓷体上的薄半导体层的方法。 该方法包括在半导体施主体中限定切割平面,将陶瓷混合物施加到半导体主体的第一面,陶瓷混合物包括陶瓷粉末和粘合剂,固化陶瓷混合物以形成陶瓷体,并切割层 在切割面处从半导体供体体中残留的层保留在陶瓷体上。 通过这种方式形成陶瓷体,可以在固化步骤中使挥发物脱气。 器件可以形成在薄片中,包括光伏器件。 陶瓷体和薄片可以承受高的加工温度。 在一些实施例中,陶瓷体可以是导电的。

    Controlled dose ion implantation
    19.
    发明授权
    Controlled dose ion implantation 有权
    受控剂量离子注入

    公开(公告)号:US07982195B2

    公开(公告)日:2011-07-19

    申请号:US10940263

    申请日:2004-09-14

    IPC分类号: G21K5/10

    摘要: An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece within the implantation chamber and a drive moves the workpiece support up and down through the thin ribbon beam of ions perpendicular to the plane of the ribbon to achieve controlled beam processing of the workpiece. A control includes a first control output coupled to said scanning device to limit an extent of side to side scanning of the ion beam to less than a maximum amount and thereby limit ion processing of the workpiece to a specified region of the workpiece and a second control output coupled to the drive simultaneously limits an extent of up and down movement of the workpiece to less than a maximum amount and to cause the ion beam to impact a controlled portion of the workpiece.

    摘要翻译: 一种离子注入机,用于通过具有扫描装置来产生色带或带状光束,该扫描装置产生由源发射的离子的侧面扫描以提供移动到注入室中的薄的离子束。 工件支撑件将工件定位在注入室内,并且驱动器通过垂直于带平面的离子的薄带离子将工件支撑件上下移动,以实现对工件的受控梁加工。 控制器包括耦合到所述扫描装置的第一控制输出,以将离子束的侧向扫描的范围限制为小于最大量,从而限制工件到工件的指定区域的离子处理和第二控制 耦合到驱动器的输出同时将工件的上下移动范围限制为小于最大量并且使离子束冲击工件的受控部分。