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    Method of manufacturing a photovoltaic device
    11.
    发明授权
    Method of manufacturing a photovoltaic device 失效
    制造光伏器件的方法

    公开(公告)号：US08062920B2

    公开(公告)日：2011-11-22

    申请号：US12508835

    申请日：2009-07-24

    申请人： Stanford R. Ovshinsky

    发明人： Stanford R. Ovshinsky

    IPC分类号： H01L21/00

    CPC分类号： H01L31/022425 ,  Y02E10/50

    摘要： A photovoltaic device including a current collection element and a method of making same. The photovoltaic device includes a substrate, a conductive layer, an active photovoltaic material, a transparent electrode and a current collection element. The current collection element includes a transparent support and one or more conductive wires integrated therewith. The conductive wires are in electrical communication with the transparent electrode. Current generated by the active photovoltaic material passes to the transparent electrode. The current collection element facilitates delivery of current passing through the transparent electrode to leads that deliver the current to an external load. The method includes placing a pre-fabricated current collection element in direct contact with the transparent electrode of the photovoltaic device. The time and expense of assembling the conductive wires during fabrication of the photovoltaic device is thereby avoided and higher manufacturing speeds are achieved.

    摘要翻译： 一种包括电流收集元件的光电器件及其制造方法。 光伏器件包括衬底，导电层，活性光伏材料，透明电极和集电元件。 电流收集元件包括透明支撑件和与其集成的一个或多个导电线。 导线与透明电极电连通。 由活性光伏材料产生的电流传递到透明电极。 电流采集元件有助于将通过透明电极的电流传送到将电流传递到外部负载的引线。 该方法包括将预制的电流收集元件放置成与光伏器件的透明电极直接接触。 从而避免了在制造光伏器件期间组装导线的时间和费用，并且实现了更高的制造速度。

    Plasma deposition of amorphous semiconductors at microwave frequencies
    12.
    发明授权
    Plasma deposition of amorphous semiconductors at microwave frequencies 失效
    微波等离子体沉积非晶半导体

    公开(公告)号：US08048782B1

    公开(公告)日：2011-11-01

    申请号：US12855631

    申请日：2010-08-12

    申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC分类号： H01L21/00

    CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    摘要翻译： 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

    Chemical vapor deposition of chalcogenide materials via alternating layers
    13.
    发明授权
    Chemical vapor deposition of chalcogenide materials via alternating layers 有权
    化学气相沉积硫族化物材料经交替层

    公开(公告)号：US07858152B2

    公开(公告)日：2010-12-28

    申请号：US12284425

    申请日：2008-09-22

    申请人： Stanford R. Ovshinsky ,  Smuruthi Kamepalli

    发明人： Stanford R. Ovshinsky ,  Smuruthi Kamepalli

    IPC分类号： C23C16/00

    CPC分类号： C23C16/305 ,  H01L45/04 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

    摘要： A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

    摘要翻译： 用于制备电和光硫族化物材料的化学气相沉积（CVD）工艺。 在优选的实施方案中，瞬时CVD沉积的材料表现出一种或多种以下性质：电开关，积聚，凝固，可逆多态行为，复位，认知功能和可逆非晶晶转换。 在一个实施方案中，包括含有硫属元素的至少一层的多层结构通过CVD沉积，并进行后沉积施加能量以产生具有根据本发明的性质的硫族化物材料。 在另一个实施方案中，具有根据本发明的性质的单层硫族化物材料由包括三种或更多种沉积前体的CVD沉积工艺形成，其中至少一种是硫属元素前体。 优选的材料是含有硫族元素Te和Ge和/或Sb的材料。

    Apparatus for refueling on-board metal hydride hydrogen storage tank
    14.
    发明授权
    Apparatus for refueling on-board metal hydride hydrogen storage tank 有权
    用于加油车载金属氢化物储氢罐的装置

    公开(公告)号：US07727492B2

    公开(公告)日：2010-06-01

    申请号：US11453157

    申请日：2006-06-14

    申请人： Vitaliy Myasnikov ,  Stanford R. Ovshinsky

    发明人： Vitaliy Myasnikov ,  Stanford R. Ovshinsky

    IPC分类号： B01J19/00 ,  F28D15/00 ,  H01M8/18 ,  B65D85/00

    CPC分类号： H01M8/04201 ,  B60L11/1892 ,  B60L11/1894 ,  F17C2270/0184 ,  Y02E60/321 ,  Y02T90/34

    摘要： An onboard hydrogen storage unit for a hydrogen powered vehicle including one or more hydrogen storage vessels at least partially filled with a hydrogen storage material which stores hydrogen in metal hydride form. During operation of the hydrogen powered vehicle heat is provided to the hydrogen storage material within the one or more hydrogen storage vessels to aid in desorption of hydrogen from the hydrogen storage material. During hydrogen refueling, heat of hydride formation is removed from the hydrogen storage material within the one or more hydrogen storage vessels to aid in absorption of hydrogen into the hydrogen storage material. The heat of hydride formation is removed from the one or more hydrogen storage vessels via a heat transfer fluid circulated and/or cooled by a stream of compressed air.

    摘要翻译： 一种用于氢动力车辆的机载氢存储单元，其包括一个或多个至少部分地填充有以金属氢化物形式储存氢的储氢材料的储氢容器。 在氢动力车辆的操作期间，将热量提供给一个或多个储氢容器内的储氢材料，以帮助氢从储氢材料中解吸。 在加氢期间，氢化物形成的热量从一个或多个储氢容器内的储氢材料中除去以帮助氢吸收到储氢材料中。 氢化物形成的热量通过由压缩空气流循环和/或冷却的传热流体从一个或多个储氢容器中除去。

    PROGRAMMED HIGH SPEED DEPOSITION OF AMORPHOUS, NANOCRYSTALLINE, MICROCRYSTALLINE, OR POLYCRYSTALLINE MATERIALS HAVING LOW INTRINSIC DEFECT DENSITY
    16.
    发明申请
    PROGRAMMED HIGH SPEED DEPOSITION OF AMORPHOUS, NANOCRYSTALLINE, MICROCRYSTALLINE, OR POLYCRYSTALLINE MATERIALS HAVING LOW INTRINSIC DEFECT DENSITY 审中-公开

    公开(公告)号：US20090050058A1

    公开(公告)日：2009-02-26

    申请号：US12199730

    申请日：2008-08-27

    申请人： Stanford R. Ovshinsky

    发明人： Stanford R. Ovshinsky

    IPC分类号： C23C16/54

    CPC分类号： C23C16/24 ,  C23C16/27 ,  C23C16/277 ,  C23C16/452 ,  C23C16/545 ,  H01J37/32357 ,  H05H1/46

    摘要： A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects. The apparatus has a control for the entire manufacturing process that includes a diagnostic element and a feedback control element to permit process programming to achieve and maintain the optimal distribution of one or more preferred species throughout the deposition process.

    Multi-functional chalcogenide electronic devices having gain
    18.
    发明申请
    Multi-functional chalcogenide electronic devices having gain 有权
    具有增益的多功能硫属化物电子器件

    公开(公告)号：US20070267622A1

    公开(公告)日：2007-11-22

    申请号：US11446798

    申请日：2006-06-05

    申请人： Stanford R. Ovshinsky

    发明人： Stanford R. Ovshinsky

    IPC分类号： H01L47/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/1029 ,  H01L29/18 ,  H01L29/802 ,  H01L31/0324 ,  H01L31/08 ,  H01L45/06 ,  H01L45/10 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/141

    摘要： Multi-functional electronic switching and current control device comprising a chalcogenide material. The devices include a load terminal, a reference terminal and a control terminal. Application of a control signal to the control terminal permits the device to function in one or more of the following modes reversibly: (1) a gain mode in which gain is induced in the current passing between the load and reference terminals; (2) a conductivity modulation mode in which the conductivity of the chalcogenide material between the load and reference terminals is modulated; (3) a current modulation mode in which the current or current density between the load and reference terminals is modulated; and/or (4) a threshold modulation mode in which the voltage required to switch the chalcogenide material between the load and reference terminals from a resistive state to a conductive state is modulated. The devices may be used as interconnection devices or signal providing devices in circuits and networks.

    摘要翻译： 包括硫属化物材料的多功能电子开关和电流控制装置。 这些设备包括负载端子，参考端子和控制端子。 将控制信号施加到控制终端允许装置在以下模式中的一个或多个模式下可逆地运行：（1）增益模式，其中在负载和参考端之间的电流中感应出增益; （2）调制负载和参考端子之间的硫族化物材料的电导率的电导率调制模式; （3）调制负载和参考端子之间的电流或电流密度的电流调制模式; 和/或（4）阈值调制模式，其中将负载和参考端子之间的硫族化物材料从电阻状态切换到导通状态所需的电压被调制。 这些设备可以用作电路和网络中的互连设备或信号提供设备。

    Multi-terminal device having logic functional
    20.
    发明授权
    Multi-terminal device having logic functional 有权
    具有逻辑功能的多终端设备

    公开(公告)号：US07186998B2

    公开(公告)日：2007-03-06

    申请号：US10761022

    申请日：2004-01-20

    申请人： Stanford R. Ovshinsky ,  Boil Pashmakov

    发明人： Stanford R. Ovshinsky ,  Boil Pashmakov

    IPC分类号： H01L29/04 ,  H01L29/06 ,  H01L47/00

    CPC分类号： H01L45/1233 ,  G11C13/0004 ,  G11C2213/53 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/144

    摘要： A multi-terminal logic device. The device includes a phase change material having crystalline and amorphous states in electrical communication with three or more electrical terminals. The phase change material is able to undergo reversible transformations between amorphous and crystalline states in response to applied electrical energy where the amorphous and crystalline states show measurably distinct electrical resistances. Electrical energy in the form of current or voltage pulses applied between a pair of terminals influences the structural state and measured electrical resistance between the terminals. In the instant devices, independent input signals are provided between different pairs of terminals and the output is measured as the resistance between yet another pair of terminals. Logic functionality is achieved through relationships between the applied input signals and the measured output resistance where the relationship is governed by the effect of the input signals on the structural state and electrical resistance of the phase change material. Logic values may be associated with the crystalline and amorphous states of the phase change material or the measured resistance between a pair of terminals.

    摘要翻译： 多终端逻辑器件。 该装置包括具有与三个或更多个电端子电连通的晶体和无定形状态的相变材料。 相变材料能够响应于所施加的电能在无定形和结晶状态之间经历可逆变换，其中非晶态和结晶态显示出可测量的不同电阻。 施加在一对端子之间的电流或电压脉冲形式的电能影响端子之间的结构状态和测量的电阻。 在即时设备中，在不同的终端对之间提供独立的输入信号，并且输出被测量为另一对终端之间的电阻。 逻辑功能通过所施加的输入信号与测量的输出电阻之间的关系实现，其中该关系由输入信号对相变材料的结构状态和电阻的影响所决定。 逻辑值可能与相变材料的晶态和非晶状态或一对端子之间测得的电阻相关。