摘要:
The present invention relates to methods inhibiting tumor metastasis and treating cancer in a subject that involve administering to the subject an antibody which recognizes GPIIIa49-66, under conditions effective to inhibit tumor metastasis and/or treat cancer in the subject.
摘要:
A photovoltaic cell has an active area formed electron donor-fullerene conjugated molecules. The electron donor is formed of a polymer, which is conjugated with an electron acceptor, such as fullerene. By conjugating the fullerene, such as C60, with electron donor moieties, such as that of the polymer, double channels are formed therebetween, whereby one channel provides hole transport and the other channel provides electron transport. As a result, the electronic coupling between the fullerene and the electron donor moiety leads to increased short-circuit current density (Jsc) and increased open-circuit voltage (Voc), resulting in high power conversion efficacy (PCE) in the solar cell.
摘要:
The present invention provides a GIP analog, which is derived from GIP (1-29, SEQ ID NO: 1), has both GLP-1 agonist activity and GIPR stimulation activity, and comprises an amino acid sequence represented by the following formula I: Tyr-A2-A3-Gly-Thr-Phe-A7-Ser-Asp-Tyr-Ser-A12-A13-A14-A15-Lys-A17-A18-A19-A20-A21-A22-A23-A24-Trp-Leu- A27-A28-A29-Y. The present invention also provides a pharmaceutical composition comprising the GIP analog and use thereof.
摘要翻译:本发明提供衍生自GIP(1-29,SEQ ID NO:1)的GIP类似物具有GLP-1激动剂活性和GIPR刺激活性,并且包含由下式I表示的氨基酸序列: Tyr-A2-A3-Gly-Thr-Phe-A7-Ser-Asp-Tyr-Ser-A12-A13-A14-A15-Lys-A17-A18-A19-A20-A21-A22-A23-A24-Trp- Leu- A27-A28-A29-Y。 本发明还提供了包含GIP类似物及其用途的药物组合物。
摘要:
A SiGe HBT has an inverted heterojunction structure, where the emitter layer is formed prior to the base layer and the collector layer. The frequency performance of the SiGe HBT is significantly improved through a better thermal process budget for the base profile, essential for higher cut-off frequency (fT) and a minimal collector-base area for a reduced parasitic capacitance, essential for higher maximum oscillation frequency (fmax). This inverted heterojunction structure can be fabricated by using ALE processes to form an emitter on a preformed epitaxial silicide, a base over the emitter and a collector over the base.
摘要:
A reaction product of the co-dehydration of a sugar alcohol and a reactant polyol having a number average hydroxyl functionality less than 4.0 is disclosed. In some aspects the sugar alcohol comprises mannitol, sorbitol, xylitol, erythritol, or mixtures thereof. In some preferred aspects the sugar alcohol comprises sorbitol. In some aspects the reactant polyol has an average molecular weight of from 40 to 500 Daltons. In some aspects, the reaction product may be suitable for the manufacture of polyisocyanurate foam. In some aspects the reaction product may be mixed with diluent polyols, such as diols, glycols, ethylene glycol, diethylene glycol, dipropylene glycol, propylene glycol, polyethylene glycol, polypropylene glycol and mixtures thereof.
摘要:
A toughened plastic and its preparation method, with the toughened plastic being obtained by rubber-plastic blending of brittle or less brittle plastics and a rubber mixture. The rubber mixture consists of powdery rubbers having a cross-linked structure and an average particle size of not more than 0.50 μm, and at least one selected from the group consisting of unvulcanized rubbers and thermoplastic elastomers. The morphology and the particle size distribution of the rubber phase contained in the toughened plastic can be controlled by changing the particle size of the powdery rubbers having a cross-linking structure and choosing proper unvulcanized rubbers or thermoplastic elastomers. The toughened plastic has good toughness and processability while keeping better strength and stiffness.
摘要:
In some embodiments, an apparatus and a system, as well as a method and an article, may operate to rotate a rotatable driving member having at least one driving lobe, and to periodically contact at least one cam on a unitary driven member with the at least one driving lobe during rotation of the rotatable driving member, to set the driven member in motion. This motion can be used to launch an acoustic wave along an axis substantially orthogonal to the axis of rotation of the driving member, where the driving member disposed completely within the driven member. The signature of the acoustic wave can be at least partially determined by the profile of the cam and the rotation rate of the driving member. Additional apparatus, systems, and methods are disclosed.
摘要:
At least one conductor is disposed in sealed vessel, which is filled with insulating gas, an hand hole is provided to a part of sealed vessel and is closed by a sealed cover, and optical fibers are disposed that form a closed loop surrounding conductor in sealed vessel. Optical fibers are hermetically led out of sealed vessel from sealed cover and are provided with at least a light source unit and an optical signal processor unit at the lead-out end. An airtight hollow tube disposed looping around leaving a predefined distance of separation is provided to conductor in sealed vessel, the end of tube is hermetically connected to sealed cover by sealing/bonding means, and optical fibers can be inserted in sealing/bonding means.
摘要:
A metal silicide thin film and ultra-shallow junctions and methods of making are disclosed. In the present disclosure, by using a metal and semiconductor dopant mixture as a target, a mixture film is formed on a semiconductor substrate using a physical vapor deposition (PVD) process. The mixture film is removed afterwards by wet etching, which is followed by annealing to form metal silicide thin film and ultra-shallow junctions. Because the metal and semiconductor dopant mixture is used as a target to deposit the mixture film, and the mixture film is removed by wet etching before annealing, self-limiting, ultra-thin, and uniform metal silicide film and ultra-shallow junctions are formed concurrently in semiconductor field-effect transistor fabrication processes, which are suitable for field-effect transistors at the 14 nm, 11 nm, or even further technology node.
摘要:
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.