公开(公告)号：US08796320B2

公开(公告)日：2014-08-05

申请号：US13519707

申请日：2010-12-28

申请人： Akira Asai ,  Kenji Matsuno ,  Naohisa Ogo ,  Osamu Takahashi ,  Yoshiaki Masuda ,  Ayumu Muroya ,  Yasuto Akiyama ,  Tadashi Ashizawa ,  Tadashi Okawara

发明人： Akira Asai ,  Kenji Matsuno ,  Naohisa Ogo ,  Osamu Takahashi ,  Yoshiaki Masuda ,  Ayumu Muroya ,  Yasuto Akiyama ,  Tadashi Ashizawa ,  Tadashi Okawara

IPC分类号： A61K31/4245 ,  C07D271/10 ,  C07D413/14

CPC分类号： C07D413/04 ,  C07D413/14 ,  C07D417/14 ,  C07D487/04 ,  C07D498/04 ,  C07D513/04

摘要： Provided is a 1,3,4-oxadiazole-2-carboxamide compound which has STAT3 inhibitory activity and is useful as an anticancer agent. Provided is a 1,3,4-oxadiazole-2-carboxamide compound represented by formula (I) or a pharmacologically acceptable salt thereof (in the formula, Ar represents a furyl group or the like; R1 represents a hydrogen atom or the like; and —X—Y represents a diaryl group such as a biphenyl group).

摘要翻译： 提供具有STAT3抑制活性并可用作抗癌剂的1,3,4-恶二唑-2-甲酰胺化合物。 提供由式（I）表示的1,3,4-恶二唑-2-甲酰胺化合物或其药学上可接受的盐（在该式中，Ar表示呋喃基等; R 1表示氢原子等; -X-Y表示二苯基等二芳基）。

公开(公告)号：US20080015828A1

公开(公告)日：2008-01-17

申请号：US11778367

申请日：2007-07-16

申请人： Teruyoshi Washizawa ,  Akira Asai ,  Masayoshi Tachihara ,  Katsuhiko Sinjo ,  Nobuhiro Yoshikawa

发明人： Teruyoshi Washizawa ,  Akira Asai ,  Masayoshi Tachihara ,  Katsuhiko Sinjo ,  Nobuhiro Yoshikawa

IPC分类号： G06F17/10

CPC分类号： G06F17/11

摘要： In an optimum design method comprising a first solution determining step of solving an optimization problem of a first evaluation function for a state variable vector with a design variable vector being as a parameter, and a second solution determining step of solving an optimization problem of a second evaluation function for the design variable vector and the state variable vector thus obtained, the second solution determining step includes the steps of computing a gradient vector of the second evaluation function for the design variable vector, computing a first coefficient based on a value of a norm of the gradient vector, computing a search vector based on the first coefficient, computing a second coefficient, and updating the design variable vector based on the second coefficient. The second coefficient computing step includes the first solution determining step, the first solution determining step is executed as an iterative method based on the gradient vector, and the state variable vector is not initialized during iteration. The optimum design method is precisely adaptable for structural changes.

摘要翻译： 一种最优设计方法，包括：第一解决方案确定步骤，用于以设计变量向量作为参数来求解用于状态变量向量的第一评估函数的优化问题;以及第二解决方案确定步骤，用于求解第二 第二解决方案确定步骤包括以下步骤：计算用于设计变量向量的第二评估函数的梯度向量，基于规范的值计算第一系数;对于设计变量向量和状态变量向量的评估函数， 的梯度向量，基于第一系数计算搜索向量，计算第二系数，并且基于第二系数更新设计变量向量。 第二系数计算步骤包括第一解决方案确定步骤，基于梯度向量作为迭代方法执行第一解决方案确定步骤，并且在迭代期间不初始化状态变量向量。 最佳设计方法适用于结构变化。

公开(公告)号：US07049198B2

公开(公告)日：2006-05-23

申请号：US10377771

申请日：2003-03-04

申请人： Koichiro Yuki ,  Tohru Saitoh ,  Minoru Kubo ,  Kiyoshi Ohnaka ,  Akira Asai ,  Koji Katayama

发明人： Koichiro Yuki ,  Tohru Saitoh ,  Minoru Kubo ,  Kiyoshi Ohnaka ,  Akira Asai ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/167

摘要： An S1-yGey layer (where 0

摘要翻译： 按照此顺序形成S 1〜Y Ge层（其中0

公开(公告)号：US20050087803A1

公开(公告)日：2005-04-28

申请号：US10997127

申请日：2004-11-24

申请人： Yoshihiro Hara ,  Akira Asai ,  Gaku Sugahara ,  Haruyuki Sorada ,  Teruhito Ohnishi

发明人： Yoshihiro Hara ,  Akira Asai ,  Gaku Sugahara ,  Haruyuki Sorada ,  Teruhito Ohnishi

IPC分类号： H01L21/762 ,  H01L21/8234 ,  H01L29/10 ,  H01L27/01 ,  H01L27/12 ,  H01L29/06 ,  H01L29/76 ,  H01L31/062

CPC分类号： H01L29/1054 ,  H01L21/76224 ,  H01L21/823481 ,  Y10S438/933

摘要： On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.

摘要翻译： 在Si衬底1上形成缓冲层2，SiGe层3和Si覆盖层4。 在基板上形成掩模，然后对基板进行图案化。 以这种方式，形成沟槽7a以到达Si衬底1并且暴露SiGe层3的侧面。 然后，将沟槽7a的表面在750℃下进行1小时的热处理，使得包含在SiGe层3的表面部分中的Ge蒸发。 因此，在沟槽7a的一部分暴露的SiGe层3的一部分，形成Ge含量低于SiGe层3的Ge含量低的Ge蒸发部分8。 此后，沟槽7a的壁被氧化。

公开(公告)号：US06867107B2

公开(公告)日：2005-03-15

申请号：US10456531

申请日：2003-06-09

申请人： Akira Asai ,  Teruhito Ohnishi

发明人： Akira Asai ,  Teruhito Ohnishi

IPC分类号： H01L21/329 ,  H01L21/84 ,  H01L27/12 ,  H01L29/93 ,  H01L21/20

CPC分类号： H01L29/66174 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/93

摘要： A variable capacitance device comprising, in a semiconductor layer formed on a substrate via an buried oxide film: an n− region 132 formed in the shape of a ring and containing an n-type dopant; an anode 133 adjoined to the outer periphery of the n− region 132, the anode 133 being formed in the shape of a ring and containing a p-type dopant; and a cathode 131 adjoined to the inner periphery of the n− region 132, the third region containing an n-type dopant, wherein the dopant concentration in the n− region 132 is lower than that in each of the anode 133 and the cathode 131.

摘要翻译： 一种可变静电电容器件，包括：通过掩埋氧化膜形成在衬底上的半导体层：形成为环形并包含n型掺杂剂的n区132; 邻接于n-区132的外周的阳极133，阳极133形成为环状并含有p型掺杂剂; 以及与n区132的内周相邻的阴极131，所述第三区包含n型掺杂剂，其中所述n区132中的掺杂剂浓度低于阳极133和阴极131中的掺杂浓度 。

公开(公告)号：US06861316B2

公开(公告)日：2005-03-01

申请号：US10637212

申请日：2003-08-08

申请人： Yoshihiro Hara ,  Akira Asai ,  Gaku Sugahara ,  Haruyuki Sorada ,  Teruhito Ohnishi

发明人： Yoshihiro Hara ,  Akira Asai ,  Gaku Sugahara ,  Haruyuki Sorada ,  Teruhito Ohnishi

IPC分类号： H01L21/762 ,  H01L21/8234 ,  H01L29/10 ,  H01L21/336

CPC分类号： H01L29/1054 ,  H01L21/76224 ,  H01L21/823481 ,  Y10S438/933

摘要： On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.

摘要翻译： 在Si衬底1上形成缓冲层2，SiGe层3和Si覆盖层4。 在基板上形成掩模，然后对基板进行图案化。 以这种方式，形成沟槽7a以到达Si衬底1并且暴露SiGe层3的侧面。 然后，将沟槽7a的表面在750℃下进行1小时的热处理，使得包含在SiGe层3的表面部分中的Ge蒸发。 因此，在沟槽7a的一部分暴露的SiGe层3的一部分，形成Ge含量低于SiGe层3的Ge含量低的Ge蒸镀部8。 此后，沟槽7a的壁被氧化。

公开(公告)号：US06860247B2

公开(公告)日：2005-03-01

申请号：US10714227

申请日：2003-11-14

申请人： Akira Asai ,  Masaki Fukuma ,  Masahiro Naito ,  Kouichi Shimizu ,  Ikuma Takahashi ,  Kazuhiro Tomizawa

发明人： Akira Asai ,  Masaki Fukuma ,  Masahiro Naito ,  Kouichi Shimizu ,  Ikuma Takahashi ,  Kazuhiro Tomizawa

IPC分类号： F01L1/344 ,  F01L1/34

CPC分类号： F01L1/3442 ,  F01L1/022 ,  F01L2001/0537 ,  F01L2001/34426 ,  F01L2001/3443 ,  F01L2001/34433 ,  F01L2001/34469 ,  F01L2001/34483 ,  Y10T74/2102

摘要： In the variable valve timing system according to the present invention, portions of the intake-side advancing hydraulic line and a retarding hydraulic line respectively constitute annular grooves 104 and 113 for advancing and retarding provided on the intake camshaft 5 bearing surface 5a of the cam cap 4 which supports the camshafts 5 and 6. In addition, portions of the advancing hydraulic line and the retarding hydraulic line for exhaust respectively constitute annular grooves for advancing and retarding 123 and 133 provided on the exhaust camshaft 6 bearing surface 4b of the cam cap 4. Moreover, the annular groove for retarding 113 on the intake camshaft 5 bearing surface 4a and the annular groove for advancing 123 on the exhaust camshaft 6 bearing surface 4b are respectively provided in the center in the width direction of their respective bearing surfaces 4a and 4b.

摘要翻译： 在根据本发明的可变气门正时系统中，进气侧前进液压管线和延迟液压管路的部分分别构成用于在进气凸轮轴5的凸轮轴5的轴承面5a上设置的用于前进和延迟的环形槽104和113 此外，前进液压管路和排气缓冲液压管路的一部分分别构成用于使设在凸轮盖4的排气凸轮轴6轴承面4b上的123和133的推进和延迟的环形槽 此外，在进气凸轮轴5的承载面4a上延伸的环状槽113和排气凸轮轴6轴承面4b上的行进用环状槽123分别设置在其各自的轴承面4a，4b的宽度方向的中央 。

公开(公告)号：US06844227B2

公开(公告)日：2005-01-18

申请号：US10203891

申请日：2001-12-26

申请人： Minoru Kubo ,  Yo Ichikawa ,  Akira Asai ,  Takahiro Kawashima

发明人： Minoru Kubo ,  Yo Ichikawa ,  Akira Asai ,  Takahiro Kawashima

IPC分类号： H01L21/04 ,  H01L21/28 ,  H01L21/318 ,  H01L21/82 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/24 ,  H01L29/51 ,  H01L29/80 ,  H01L21/335 ,  H01L21/8234

CPC分类号： H01L29/518 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L21/8213 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/802

摘要： In a field effect transistor, an Si layer, an SiC (Si1-yCy) channel layer, a CN gate insulating film made of a carbon nitride layer (CN) and a gate electrode are deposited in this order on an Si substrate. The thickness of the SiC channel layer is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region and a drain region are formed on opposite sides of the SiC channel layer, and a source electrode and a drain electrode are provided on the source region and the drain region, respectively.

摘要翻译： 在场效应晶体管中，在Si衬底上依次沉积Si层，SiC（Si1-yCy）沟道层，由氮化碳层（CN）和栅极形成的CN栅极绝缘膜。 将SiC沟道层的厚度设定为小于或等于临界厚度的值，使得根据碳含量不会发生由于应变引起的位错。 在SiC沟道层的相对侧上形成源极区域和漏极区域，在源极区域和漏极区域分别设置源电极和漏极电极。

公开(公告)号：US06492602B2

公开(公告)日：2002-12-10

申请号：US09778243

申请日：2001-02-06

申请人： Akira Asai ,  Shigenori Sato ,  Katsuichi Oba ,  Sachiko Homma

发明人： Akira Asai ,  Shigenori Sato ,  Katsuichi Oba ,  Sachiko Homma

IPC分类号： H01H1334

CPC分类号： H01H13/807 ,  H01H13/14 ,  H01H13/44 ,  H01H13/52 ,  H01H2203/038 ,  H01H2207/004 ,  H01H2215/004 ,  H01H2215/036 ,  H01H2223/054 ,  H01H2225/002 ,  H01H2225/018 ,  H01H2227/028 ,  H01H2229/038 ,  H01H2229/042 ,  H01H2233/036

摘要： In a two-position pushbutton switch, a cushioning member is placed on at least one of first and second click springs, and the click spring is pressed via the cushioning member, thereby making a first press stroke long. A guide member is provided to guide the motion of a driving member. The driving member is slid along the guide member in the pressing direction of a key top.

摘要翻译： 在双位置按钮开关中，将缓冲构件放置在第一和第二咔嗒弹簧中的至少一个上，并且通过缓冲构件按压咔嗒弹簧，从而使第一冲压行程长。 引导构件用于引导驱动构件的运动。 驱动构件沿着键顶的按压方向沿引导构件滑动。

公开(公告)号：US6164763A

公开(公告)日：2000-12-26

申请号：US888509

申请日：1997-07-07

申请人： Sadayuki Sugama ,  Akira Asai ,  Hiroyuki Ishinaga ,  Toshio Kashino ,  Aya Yoshihira ,  Kiyomitsu Kudo ,  Yoshie Asakawa ,  Hiroyuki Sugiyama

发明人： Sadayuki Sugama ,  Akira Asai ,  Hiroyuki Ishinaga ,  Toshio Kashino ,  Aya Yoshihira ,  Kiyomitsu Kudo ,  Yoshie Asakawa ,  Hiroyuki Sugiyama

IPC分类号： B41J2/175 ,  B41J2/05 ,  B41J2/14

CPC分类号： B41J2/14048 ,  B41J2002/14362

摘要： A liquid discharging method of regulating and directing an air bubble to a discharge port by a substrate having a heat generating surface for generating heat for creating an air bubble in a liquid disposed in face-to-face relationship with a liquid discharge port, a movable member provided so as to intervene between the heat generating surface and the discharge port, and having a free end displaceable by the air bubble, the free end or a changing portion being located in an area opposed to the minimum area region of the discharge port or upstream of the opposed area, and an opposed surface opposed to a surface which provides the heat generating surface side of the movable member when the free end of the movable member is displaced by the air bubble, and fixed to cooperate with the movable member during the displacement of the movable member to direct the air bubble toward the discharge port.

摘要翻译： 一种液体排放方法，其通过具有用于产生用于产生与液体排出口面对面地配置的液体中的气泡产生热量的基板的基板调节和引导到排出口， 构件，其设置成介于发热表面和排出口之间，并且具有可由气泡移位的自由端，自由端或变化部分位于与排出口的最小区域区域相对的区域中，或 以及与可动件的发热表面侧的表面相对的相对表面，当活动件的自由端被气泡移位时，该表面被固定以与可动件配合 移动构件的位移以将气泡朝向排出口引导。