PRE-PLATED LEAD TIP FOR WETTABLE FLANK LEADFRAME

    公开(公告)号:US20240055327A1

    公开(公告)日:2024-02-15

    申请号:US17818395

    申请日:2022-08-09

    CPC classification number: H01L23/4951 H01L23/49555 H01L21/4842

    Abstract: A method for making a semiconductor device is provided. The method generally includes forming a package having a first plurality of leads extending from a first side of the package, the package disposed on a leadframe. The method generally includes making a first cut adjacent to a first side of a first lead of the first plurality of leads, the first side extending from the first side of the package. The method generally includes making a second cut adjacent to a second side of the first lead of the first plurality of the lead, the second side of the lead opposite the first side of the lead and extending from the first side of the package.

    SEMICONDUCTOR DEVICE PACKAGE WITH THERMAL PAD

    公开(公告)号:US20230136784A1

    公开(公告)日:2023-05-04

    申请号:US17515176

    申请日:2021-10-29

    Abstract: A described example includes: a package substrate having a die pad with a die side surface and having an opposite backside surface, having leads arranged along two opposite sides and having die pad straps extending from two opposing ends of the die pad. The leads lie in a first plane, a portion of the die pad straps lie in a second plane that is spaced from the first plane and located closer to the die pad, and the die pad lies in a third plane that is spaced from and parallel to the second plane in a direction away from the first plane. A semiconductor die is mounted to the die side surface and mold compound covers the semiconductor die, a portion of the leads, and the die side surface of the die pad, and the backside surface of the die pad exposed from the mold compound.

    BUMP BOND STRUCTURE FOR ENHANCED ELECTROMIGRATION PERFORMANCE

    公开(公告)号:US20200035633A1

    公开(公告)日:2020-01-30

    申请号:US16047888

    申请日:2018-07-27

    Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

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