公开(公告)号：US20220328301A1

公开(公告)日：2022-10-13

申请号：US17808375

申请日：2022-06-23

Applicant: Tokyo Electron Limited

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01L21/027 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01J37/32 ,  G03F7/40

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20200040463A1

公开(公告)日：2020-02-06

申请号：US16526088

申请日：2019-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro TAKEZAWA ,  Shigeru NAKAJIMA ,  Katsushige HARADA ,  Yusuke TACHINO

IPC: C23F4/02 ,  C23C8/06 ,  C23C8/80

Abstract: There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

公开(公告)号：US20150259792A1

公开(公告)日：2015-09-17

申请号：US14658355

申请日：2015-03-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru NAKAJIMA ,  Hiromi SHIMA ,  Yusuke TACHINO

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/455 ,  C23C16/08 ,  C23C16/52

CPC classification number: C23C16/45525 ,  C23C16/36

Abstract: A method of forming a titanium carbonitride film is provided. In one embodiment, the method of forming the titanium carbonitride film includes performing a cycle a plurality of times to form a titanium carbonitride film. Each cycle performed a plurality of times includes supplying a raw material gas of titanium into a process chamber in which a process object is accommodated, and simultaneously supplying a first gas containing carbon and hydrogen and a second gas containing nitrogen into the process chamber.

Abstract translation: 提供了形成碳氮化钛膜的方法。 在一个实施方案中，形成碳氮化钛膜的方法包括多次进行循环以形成碳氮化钛膜。 每个循环进行多次，包括将钛的原料气体供应到其中容纳处理对象的处理室中，同时将含有碳和氢的第一气体和含有氮的第二气体供应到处理室中。

公开(公告)号：US20240096595A1

公开(公告)日：2024-03-21

申请号：US18524767

申请日：2023-11-30

Applicant: Tokyo Electron Limited

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01J37/32091 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/027 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20190115204A1

公开(公告)日：2019-04-18

申请号：US16216255

申请日：2018-12-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01L21/027 ,  C23C16/02 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  G03F7/40 ,  C23C16/455 ,  C23C16/40

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20180182652A1

公开(公告)日：2018-06-28

申请号：US15844707

申请日：2017-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuji SESHIMO ,  Yoshihiro TAKEZAWA ,  Shigeru NAKAJIMA

IPC: H01L21/67 ,  H01J37/32 ,  H01J11/34

CPC classification number: H01L21/67167 ,  G05B2219/45031 ,  H01J11/34 ,  H01J37/32798 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757 ,  H01L21/67781

Abstract: A substrate processing apparatus includes a base member having an opening, a substrate holding member fixedly provided on the base member and configured to hold a plurality of substrates in multiple stages in a vertical direction, a plurality of shower plates provided to respectively face the substrates held by the substrate holding member and configured to supply a processing gas to the substrates existing thereunder in a shower shape, at least one gas introduction member configured to introduce the processing gas into the shower plates, a processing container provided to be able to make close contact with the base member and brought into close contact with the base member to define an arrangement space of the substrate holding member as a processing chamber, a heating device configured to heat the substrates in the processing chamber, and an exhaust mechanism configured to evacuate the processing chamber through the opening.

公开(公告)号：US20180019113A1

公开(公告)日：2018-01-18

申请号：US15714052

申请日：2017-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01L21/027 ,  C23C16/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02 ,  G03F7/40 ,  C23C16/455 ,  C23C16/40 ,  H01L21/768 ,  H01L21/033

CPC classification number: H01L21/027 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/32139 ,  H01L21/76816

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20170162381A1

公开(公告)日：2017-06-08

申请号：US15440406

申请日：2017-02-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01L21/027 ,  H01L21/02

CPC classification number: H01L21/027 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/32139 ,  H01L21/76816

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20150270126A1

公开(公告)日：2015-09-24

申请号：US14730530

申请日：2015-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu KAKIMOTO ,  Atsushi ENDO ,  Takahiro MIYAHARA ,  Shigeru NAKAJIMA ,  Satoshi TAKAGI ,  Kazumasa IGARASHI

IPC: H01L21/02

CPC classification number: C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract translation: 一种薄膜形成方法，其在被配置为真空可消耗的处理容器中的待处理物体的表面上形成种子膜和含杂质的硅膜，所述薄膜形成方法包括：执行形成所述第一步骤的第一步骤， 通过将包含氨基硅烷类气体的种子膜原料气体供给到处理容器中，在物体表面上由硅，碳和氮化合物形成的种子膜; 以及通过向所述处理容器中供给硅烷系气体和含杂质气体，进行在种子膜上形成非晶状态的含杂质硅膜的第二工序。

公开(公告)号：US20150211113A1

公开(公告)日：2015-07-30

申请号：US14603405

申请日：2015-01-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru NAKAJIMA ,  Hiromi SHIMA ,  Yusuke TACHINO

IPC: C23C16/448

CPC classification number: C23C16/4402 ,  C23C16/45546 ,  C23C16/45572 ,  C23C16/45578

Abstract: A vertical heat treatment apparatus is configured that a substrate supporter supporting a plurality of substrates in the configuration of a shelf thereon is loaded in a vertical reaction tube surrounded by a heating mechanism and a heat treatment is performed. The vertical heat treatment apparatus includes: a gas nozzle provided in the reaction tube to extend in a vertical direction of the substrate supporter and configured to discharge a processing gas; and a flow path forming member provided to surround the gas nozzle in the reaction tube, wherein the flow path forming member defines a fluid flowing space of a temperature adjusting fluid for adjusting a temperature of the processing gas in the gas nozzle and includes a supply hole and an exhaust hole to supply the temperature adjusting fluid.

Abstract translation: 垂直热处理装置被构造成将支撑其上的搁板结构的多个基板的基板支撑件装载在由加热机构包围的垂直反应管中并进行热处理。 垂直热处理装置包括：设置在反应管中的气体喷嘴，其沿着基板支撑件的垂直方向延伸并且构造成排出处理气体; 以及流路形成部件，其设置成围绕所述反应管中的所述气体喷嘴，所述流路形成部件限定用于调节所述气体喷嘴中的处理气体的温度的温度调节流体的流体流动空间，并且包括供给孔 以及用于供应温度调节流体的排气孔。