公开(公告)号：US07012311B2

公开(公告)日：2006-03-14

申请号：US09866576

申请日：2001-05-29

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  G11C11/16 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28238 ,  H01L21/28291 ,  H01L27/11521 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/7883

摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

摘要翻译： 半导体器件包括在（111）表面附近具有晶体表面的Si晶体和形成在所述晶体表面上的绝缘膜，所述绝缘膜的至少一部分包括含有Kr或Si氮化物的Si氧化物膜 含Ar或Kr的薄膜。

公开(公告)号：US06669825B2

公开(公告)日：2003-12-30

申请号：US09867767

申请日：2001-05-31

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa

IPC分类号： C23C1434

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

公开(公告)号：US06551948B2

公开(公告)日：2003-04-22

申请号：US09867699

申请日：2001-05-31

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa

IPC分类号： H01L2131

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

公开(公告)号：US4847668A

公开(公告)日：1989-07-11

申请号：US275673

申请日：1988-11-23

申请人： Shigetoshi Sugawa ,  Nobuyoshi Tanaka ,  Toshiji Suzuki ,  Tadahiro Ohmi ,  Tadanori Harada

发明人： Shigetoshi Sugawa ,  Nobuyoshi Tanaka ,  Toshiji Suzuki ,  Tadahiro Ohmi ,  Tadanori Harada

IPC分类号： H01L27/146 ,  H04N3/15

CPC分类号： H04N3/1568 ,  H01L27/14681

摘要： A photoelectric transducer device controls a potential of a control electrode region of a semiconductor transistor through a capacitor to perform a storage operation for storing carriers generated upon light excitation of the control electrode region, a read operation for reading a signal from a main electrode region of the semiconductor transistor, the signal being controlled by a storage voltage generated by storage of the carriers, and a refresh operation for electrically neutralizing the carriers stored in the control electrode region. A semiconductor reigon having the same conductivity type as that of the main electrode region and having an impurity concentration lower than that of the main electrode region is formed in the control electrode region independently of the main electrode region. A photoelectric transducer device including a semiconductor region. Two main electrodes and a control electrode are formed between the main electrodes. A capacitor is provided for controlling a potential of the control electrode in a floating state. The photoelectric transducer device is adapted to control the potential of the control electrode in the floating state through the capacitor to store carriers generated by electromagnetic waves incident on the semiconductor region. Control means is provided for controlling the potential of the control electrode through the capacitor to electrically neutralize the carriers and means for injecting carriers into the control electrode immediately prior to electrical neutralization of the carriers by the control means is provided. '

公开(公告)号：US08633395B2

公开(公告)日：2014-01-21

申请号：US12995514

申请日：2009-05-22

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Hiroshi Imai ,  Akinobu Teramoto

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Hiroshi Imai ,  Akinobu Teramoto

IPC分类号： H05K1/03 ,  H05K1/11

CPC分类号： H05K1/0218 ,  H01L23/66 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6688 ,  H01L2924/0002 ,  H01L2924/19032 ,  H01L2924/3011 ,  H05K1/025 ,  H05K1/0265 ,  H05K3/4652 ,  H05K2201/0191 ,  H05K2201/0352 ,  H05K2201/0715 ,  H05K2201/096 ,  H05K2201/09618 ,  H05K2201/09727 ,  H05K2201/09972 ,  H01L2924/00

摘要： A multilayer wiring board 100 comprises a first wiring region 101 where wirings 103a and insulating layers 104a and 104b are alternately laminated, and a second wiring region 102 where a thickness H2 of an insulating layer 104 is twice or more a thickness H1 of the insulating layer in the first wiring region 101 and a width W2 of a wiring 103b is twice or more a width W1 of the wiring in the first wiring region 101. The first wiring region 101 and the second wiring region 102 are integrally formed on the same board.

摘要翻译： 多层布线基板100包括：布线103a和绝缘层104a，104b交替层叠的第一布线区域101和绝缘层104的厚度H2为绝缘层的厚度H1的两倍以上的第二布线区域102 在第一布线区域101中，布线103b的宽度W2是第一布线区域101中的布线的宽度W1的两倍或更多倍。第一布线区域101和第二布线区域102一体地形成在同一个板上。

公开(公告)号：US08314449B2

公开(公告)日：2012-11-20

申请号：US12604015

申请日：2009-10-22

申请人： Takefumi Nishimuta ,  Hiroshi Miyagi ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto

发明人： Takefumi Nishimuta ,  Hiroshi Miyagi ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto

IPC分类号： H01L21/76

CPC分类号： H01L29/7851 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/82385 ,  H01L29/045

摘要： A MIS transistor, formed on a semiconductor substrate, assumed to comprise a semiconductor substrate (702, 910) comprising a projecting part (704, 910B) with at least two different crystal planes on the surface on a principal plane, a gate insulator (708, 920B) for covering at least a part of each of said at least two different crystal planes constituting the surface of the projecting part, a gate electrode (706, 930B), comprised on each of said at least two different crystal planes constituting the surface of the projecting part, which sandwiches the gate insulator with the said at least two different planes, and a single conductivity type diffusion region (710a, 710b, 910c, 910d) formed in the projecting part facing each of said at least two different crystal planes and individually formed on both sides of the gate electrode. Such a configuration allows control over increase in the element area and increase of channel width.

摘要翻译： 形成在半导体衬底上的MIS晶体管被假设为包括半导体衬底（702,910），该半导体衬底包括在主平面上的表面上具有至少两个不同晶面的突出部分（704,910B），栅极绝缘体（708 ，920B），用于覆盖构成所述突出部分的表面的所述至少两个不同晶面的每一个的至少一部分;栅电极（706,930B），包括在构成所述表面的所述至少两个不同晶面中的每一个上 所述突出部分与所述至少两个不同平面夹住所述栅极绝缘体，以及形成在所述突出部分中的所述至少两个不同晶面中的每一个的单导电型扩散区域（710a，710b，910c，910d） 并分别形成在栅电极的两侧。 这种配置允许控制元件面积的增加和通道宽度的增加。

公开(公告)号：US20120208375A1

公开(公告)日：2012-08-16

申请号：US13453206

申请日：2012-04-23

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

IPC分类号： H01L21/316 ,  H01L21/314

CPC分类号： H01L21/3185 ,  H01L21/0214 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。

公开(公告)号：US07759762B2

公开(公告)日：2010-07-20

申请号：US10986778

申请日：2004-11-15

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

IPC分类号： H01L29/00

CPC分类号： H01L21/28185 ,  G11C11/16 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28238 ,  H01L21/28291 ,  H01L27/11521 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/7883

摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

公开(公告)号：US07404991B2

公开(公告)日：2008-07-29

申请号：US10472849

申请日：2002-03-28

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H05H1/24

CPC分类号： H01J37/32266 ,  H01J37/32192 ,  H01J37/32954 ,  H01J37/3299

摘要： A microwave is introduced into a process chamber through a waveguide (26) of the plasma process apparatus, thereby generating plasma. A reflection monitor (40) and an electric power monitor (42) monitor the electric power of a reflected wave reflected by the plasma that is generated in the process chamber. Moreover, an incidence monitor (36) and a frequency monitor (48) monitor the frequency of the microwave generated by a magnetron (24). An electric power supplied to the magnetron (24) is controlled based on the monitored electric power of the reflected wave and the monitored frequency. This method thus controls plasma density to a constant level.

摘要翻译： 通过等离子体处理装置的波导（26）将微波引入处理室，从而产生等离子体。 反射监视器（40）和电力监视器（42）监视由处理室中产生的等离子体反射的反射波的电力。 此外，入射监视器（36）和频率监视器（48）监视由磁控管（24）产生的微波的频率。 基于受监测的反射波电力和被监测频率来控制提供给磁控管（24）的电力。 因此，该方法将等离子体密度控制到恒定水平。

公开(公告)号：US20080128758A1

公开(公告)日：2008-06-05

申请号：US11907349

申请日：2007-10-11

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

IPC分类号： H01L29/04

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28238 ,  H01L27/11521 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/40111 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/7883

摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

摘要翻译： 半导体器件包括在（111）表面附近具有晶体表面的Si晶体和形成在所述晶体表面上的绝缘膜，所述绝缘膜的至少一部分包括含有Kr或Si氮化物的Si氧化物膜 含Ar或Kr的薄膜。